Search Results - "HARTEL, A. M"

Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices by HARTEL, A. M, HILLER, D, GUTSCH, S, LÖPER, P, ESTRADE, S, PEIRO, F, GARRIDO, B, ZACHARIAS, M

“…Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition. The as-deposited…”
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Intrinsic nonradiative recombination in ensembles of silicon nanocrystals by Hartel, A. M., Gutsch, S., Hiller, D., Zacharias, M.

“…A detailed time-resolved photoluminescence (TRPL) and continuous wave photoluminescence (CWPL) study as a function of the silicon nanocrystal (Si NC) size and…”
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Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix by Gutsch, S., Hartel, A. M., Hiller, D., Zakharov, N., Werner, P., Zacharias, M.

“…Strongly size controlled silicon nanocrystals in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition following the…”
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Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications by Hartel, A. M., Gutsch, S., Hiller, D., Kübel, C., Zakharov, N., Werner, P., Zacharias, M.

“…We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This…”
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Fundamental temperature-dependent properties of the Si nanocrystal band gap by Hartel, A. M., Gutsch, S., Hiller, D., Zacharias, M.

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Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO 2 matrix by Gutsch, S., Hartel, A. M., Hiller, D., Zakharov, N., Werner, P., Zacharias, M.

“…Strongly size controlled silicon nanocrystals in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition following the…”
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Fundamental temperature-dependent properties of the Si nanocrvstal band gap by Hartel, A M, Gutsch, S, Hiller, D, Zacharias, M

“…Ever since the first reports about low-temperature photoluminescence (PL) measurements of Si nanocrystals Si (NCs), a severe deviation from the equations…”
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