Search Results - "HARRIOTT, L. R"

The electrical behavior of nitro oligo(phenylene ethynylene)'s in pure and mixed monolayers by MAJUMDAR, Nabanita, GERGEL-HACKETT, N, BEAN, J. C, HARRIOTT, L. R, PATTANAIK, G, ZANGARI, G, YAO, Y, TOUR, J. M

“…In order to realize molecular electronic devices, molecules with electrically interesting behavior must be identified. One molecule that has potential for use…”
Get full text

Limits of lithography by Harriott, L.R.

“…Lithography technology has been one of the key enablers and drivers for the semiconductor industry for the past several decades. Improvements in lithography…”
Get full text

Kinetic surface roughening in molecular beam epitaxy of InP by COTTA, M. A, HAMM, R. A, STALEY, T. W, CHU, S. N. G, HARRIOTT, L. R, PANISH, M. B, TEMKIN, H

Get full text

High-resolution patterning of high Tc superconductors by HARRIOTT, L. R, POLAKOS, P. A, RICE, C. E

“…A 20 keV Ga focused ion beam has been used to pattern superconducting submicrometer bridge structures in thin films of Ba2YCu3O7 material by physical…”
Get full text

Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography by TEMKIN, H, HARRIOTT, L. R, PANISH, M. B

“…The application of thin semiconductor layers as etch masks for high vacuum lithography is described. Heteroepitaxial layers of In0.53Ga0.47As or InP, as thin…”
Get full text

Nanowell device for the electrical characterization of metal–molecule–metal junctions by Majumdar, Nabanita, Gergel, Nadine, Routenberg, David, Bean, J. C., Harriott, L. R., Li, B., Pu, L., Yao, Y., Tour, J. M.

“…A nanowell device for the electrical characterization of metal–molecule–metal junctions was built using readily available processing tools and techniques. This…”
Get full text

Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy by COTTA, M. A, HAMM, R. A, STALEY, T. W, YADVISH, R. D, HARRIOTT, L. R, TEMKIN, H

“…Using scanning force microscopy we have studied the growth rate enhancement at the edge of InP and lattice matched InGaAs layers grown into openings on…”
Get full text

In situ pattern formation and high quality overgrowth by gas source molecular beam epitaxy by TEMKIN, H, HARRIOTT, L. R, HAMM, R. A, WEINER, J, PANISH, M. B

Get full text

Micromachining of integrated optical structures by HARRIOTT, L. R, SCOTTI, R. E, CUMMINGS, K. D, AMBROSE, A. F

“…Three-dimensional features have been milled into optical materials by scanning a submicron focused gallium ion beam. Different shapes are obtained using…”
Get full text

Buried-heterostructure lasers fabricated by in situ processing techniques by WANG, Y. L, TEMKIN, H, HARRIOTT, L. R, LOGAN, R. A, TANBUN-EK, T

“…We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques…”
Get full text

Beam‐size measurements in focused ion beam systems by Harriott, L. R.

“…Accurate measurement of the beam diameter for a finely focused ion beam is difficult using conventional methods which have been applied in electron beam…”
Get full text

Study of the room temperature molecular memory observed from a nanowell device by Gergel, N., Majumdar, N., Keyvanfar, K., Swami, N., Harriott, L. R., Bean, J. C., Pattanaik, Gyana, Zangari, Giovanni, Yao, Y., Tour, J. M.

“…We tested the electrical characteristics of an oligo(phenylene ethynylene) (OPE) molecule with one nitro side group, an OPE with two nitro side groups, and an…”
Get full text

Electron-optics method for high-throughput in a SCALPEL system: Preliminary analysis by Waskiewicz, W.K., Harriott, L.R., Liddle, J.A., Stanton, S.T., Berger, S.D., Munro, E., Zhu, X.

“…A likely technology to supplant optical tools for the manufacturing of sub-0.13 μm design rule ICs is one based upon SCALPEL ® (SCattering with Angular…”
Get full text

Kinetic roughness in epitaxy (experimental) by Cotta, M.A., Hamm, R.A., Chu, S.N.G., Hull, R., Harriott, L.R., Temkin, H.

“…Different regimes of growth morphology are observed for InP films prepared by metal-organic molecular beam epitaxy. Below a well-defined minimum growth…”
Get full text

Feature size effects on selective area epitaxy of InGaAs by COTTA, M. A, HARRIOTT, L. R, WANG, Y. L, HAMM, R. A, WADE, H. H, WEINER, J. S, RITTER, D, TEMKIN, H

“…We demonstrate the use of an ultrathin (≊5 nm) Si layer deposited on InP substrates as a mask in selective area epitaxy of InGaAs by metalorganic molecular…”
Get full text

Digital scan model for focused ion beam induced gas etching by Harriott, L. R.

“…Focused ion beam (FIB), assisted, gas etching has several advantages over physical sputtering in many FIB applications. Advantages include etch rate…”
Get full text

Defect repair for soft x‐ray projection lithography masks by Tennant, D. M., Fetter, L. A., Harriott, L. R., MacDowell, A. A., Mulgrew, P. P., Waskiewicz, W. K., Windt, D. L., Wood, O. R.

“…The most promising option for masks intended for use in soft x‐ray projection lithography (SXPL) at λ=13 nm is a reflective mask which uses a Mo/Si multilayer…”
Get full text

Focused ion beam XeF2 etching of materials for phase‐shift masks by Harriott, L. R.

“…Phase‐shift masks (PSMs) for photolithography are emerging as a very important technology for integrated circuit manufacture at 0.35 μm design rules and below…”
Get full text

Decomposition of palladium acetate films with a microfocused ion beam by HARRIOTT, L. R, CUMMINGS, K. D, GROSS, M. E, BROWN, W. L

“…Submicron Pd features have been fabricated on Si and SiO2 substrates by microfocused Ga+ ion beam exposure of spin-on palladium acetate, [Pd(O2CCH3)2]3, films…”
Get full text

Little-Parks oscillations of Tc in patterned microstructures of the oxide superconductor YBa2Cu3O7 : experimental limits on fractional-statistics-particle theories by GAMMEL, P. L, POLAKOS, P. A, RICE, C. E, HARRIOTT, L. R, BISHOP, D. J

Get full text