Search Results - "HARBISON, J. P"

Observation of pair currents in superconductor-semiconductor contacts by KASTALSKY, A, KLEINSASSER, A. W, GREENE, L. H, BHAT, R, MILLIKEN, F. P, HARBISON, J. P

“…An excess low-voltage conductance is observed in Nb-InGaAs contacts at low temperatures and interpreted as being due to a pair current across the…”
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Extreme selectivity in the lift-off of epitaxial GaAs films by YABLONOVITCH, E, GMITTER, T, HARBISON, J. P, BHAT, R

“…We have discovered conditions for the selective lift-off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown. A…”
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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization by Jewell, J.L., Harbison, J.P., Scherer, A., Lee, Y.H., Florez, L.T.

“…The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design…”
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Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers by Chang-Hasnain, C.J., Harbison, J.P., Hasnain, G., Von Lehmen, A.C., Florez, L.T., Stoffel, N.G.

“…The dynamic, polarization, and transverse mode characteristics of strained InGaAs-GaAs quantum well vertical cavity surface emitting lasers (VCSELs) emitting…”
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Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates by YABLONOVITCH, E, HWANG, D. M, GMITTER, T. J, FLOREZ, L. T, HARBISON, J. P

“…Epitaxial liftoff is an alternative to lattice-mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth…”
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Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effects by Tanaka, M., Harbison, J. P., Park, M. C., Park, Y. S., Shin, T., Rothberg, G. M.

“…We have studied template effects in molecular beam epitaxy (MBE) of ferromagnetic MnAs thin films on (001) GaAs substrates. When As2 flux was first supplied…”
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Quenching of the Hall effect in a one-dimensional wire by ROUKES, M. L, SCHERER, A, ALLEN, S. J. JR, CRAIGHEAD, H. G, RUTHEN, R. M, BEEBE, E. D, HARBISON, J. P

“…The first observation of the complete quenching of the Hall effect in a one- dimensional conductor is reported. In narrow wires at low temperatures and for…”
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Large two-dimensional arrays of phase-locked vertical cavity surface emitting lasers by ORENSTEIN, M, KAPON, E, HARBISON, J. P, FLOREZ, L. T, STOFFEL, N. G

“…The phase-locking of two-dimensional (2D) arrays incorporating a large number of electrically pumped, vertical cavity surface emitting lasers (VCSELs) is…”
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Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs by TANAKA, M, HARBISON, J. P, DEBOECK, J, SANDS, T, PHILIPS, B, CHEEKS, T. L, KERAMIDAS, V. G

“…We have successfully grown ferromagnetic MnGa ultrathin films on GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and…”
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Electronic passivation of GaAs surfaces through the formation of arsenic-sulfur bonds by SANDROFF, C. J, HEGDE, M. S, FARROW, L. A, CHANG, C. C, HARBISON, J. P

“…X-ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSy phases…”
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Transverse mode characteristics of vertical cavity surface-emitting lasers by CHANG-HASNAIN, C. J, ORENSTEIN, M, VON LEHMEN, A, FLOREZ, L. T, HARBISON, J. P, STOFFEL, N. G

“…Transverse mode characteristics of vertical cavity surface-emitting (VC-SE) lasers are described. The mode structure is investigated as a function of the…”
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Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs by Aspnes, D. E., Harbison, J. P., Studna, A. A., Florez, L. T.

“…We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE)…”
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Optical-reflectance and electron-diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001) by ASPNES, D. E, HARBISON, J. P, STUDNA, A. A, FLOREZ, L. T

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Multiple wavelength tunable surface-emitting laser arrays by Chang-Hasnain, C.J., Harbison, J.P., Zah, C.-E., Maeda, M.W., Florez, L.T., Stoffel, N.G., Lee, T.-P.

“…Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental…”
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Two-dimensional phase locked arrays of vertical-cavity semiconductor lasers by mirror reflectivity modulation by ORENSTEIN, M, KAPON, E, STOFFEL, N. G, HARBISON, J. P, FLOREZ, L. T, WULLERT, J

“…Coupling of two-dimensional (2D) vertical-cavity surface-emitting lasers (VCSELs) to give a coherent supermode is described. The top metal layer of a…”
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Epitaxial ferromagnetic τ-MnAl films on GaAs by SANDS, T, HARBISON, J. P, LEADBEATER, M. L, ALLEN, S. J, HULL, G. W, RAMESH, R, KERAMIDAS, V. G

“…We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction…”
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Photon-mediated sequential resonant tunneling in intense terahertz electric fields by GUIMARAES, P. S. S, KEAY, B. J, KAMINSKI, J. P, ALLEN, S. J, HOPKINS, P. F, GOSSARD, A. C, FLOREZ, L. T, HARBISON, J. P

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Direct optical measurement of surface dielectric responses: interrupted growth on (001) GaAs by ASPNES, D. E, CHANG, Y. C, STUDNA, A. A, FLOREZ, L. T, FARRELL, H. H, HARBISON, J. P

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Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition by KAMIYA, I, TANAKA, H, ESPNES, D. E, FLOREZ, L. T, HARBISON, J. P, BHAT, R

“…Arsenic dimers and multilayers are shown to exist on (001)GaAs surfaces under atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD)…”
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Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces by YABLONOVITCH, E, SKROMME, B. J, BHAT, R, HARBISON, J. P, GMITTER, T. J

“…We compare the nature of the band bending under GaAs surfaces prepared by alkaline sulfides [Na2S⋅9H2O, (NH4)2S] with that under oxidized GaAs surfaces. We…”
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