Search Results - "HANSEN, W. L"

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  1. 1

    Impact of same-day antibiotic susceptibility testing on time to appropriate antibiotic treatment of patients with bacteraemia: a randomised controlled trial by Beuving, J., Wolffs, P. F. G., Hansen, W. L. J., Stobberingh, E. E., Bruggeman, C. A., Kessels, A., Verbon, A.

    “…Inadequate therapy in bloodstream infections is suggested to be associated with higher mortality. We evaluated the reduction in inappropriate antibiotic…”
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  2. 2

    Properties of GaN grown at high rates on sapphire and on 6H–SiC by Fischer, S., Wetzel, C., Hansen, W. L., Bourret-Courchesne, E. D., Meyer, B. K., Haller, E. E.

    Published in Applied physics letters (28-10-1996)
    “…Thick GaN films were deposited with growth rates as high as 250 μm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our…”
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  3. 3

    High purity isotopically enriched Ge-70 and Ge-74 single crystals - Isotope separation, growth, and properties by Itoh, Kohei, Hansen, W. L., Haller, E. E., Farmer, J. W., Ozhogin, V. I., Rudnev, A., Tikhomirov, A.

    Published in Journal of materials research (01-06-1993)
    “…Ge-70 and Ge-74 isotopes were successfully separated from natural Ge, and were zone purified. Several highly enriched, high purity Ge-70 and Ge-74 single…”
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  4. 4

    Neutron transmutation doping of isotopically engineered Ge by Itoh, K. M., Haller, E. E., Hansen, W. L., Beeman, J. W., Farmer, J. W., Rudnev, A., Tikhomirov, A., Ozhogin, V. I.

    Published in Applied physics letters (18-04-1994)
    “…We report a novel approach for obtaining precise control of both p- and n-type dopant concentrations in bulk Ge single crystals. High-purity Ge single crystals…”
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  5. 5

    Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength by Wu, I. C., Beeman, J. W., Luke, P. N., Hansen, W. L., Haller, E. E.

    Published in Applied physics letters (01-04-1991)
    “…Far-IR Ge detectors fabricated using boron ion implantation are shown to exhibit operating characteristics compatible with requirements for low background…”
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  6. 6

    Argon laser therapy of endometriosis: a review of 92 consecutive patients by Keye, Jr, W R, Hansen, L W, Astin, M, Poulson, Jr, A M

    Published in Fertility and sterility (01-02-1987)
    “…The conception rate, relief of pain, and safety of argon laser photocoagulation of endometriosis were evaluated in 92 patients. All patients were treated at…”
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  7. 7

    Coimplantation and electrical activity of C in GaAs : stoichiometry and damage effects by MOLL, A. J, KIN MAN YU, WALUKIEWICZ, W, HANSEN, W. L, HALLER, E. E

    Published in Applied physics letters (11-05-1992)
    “…We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on…”
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  8. 8

    Stimulated emission from p-Ge due to transitions between light-hole landau levels and excited states of shallow impurities by KREMSER, C, HEISS, W, UNTERRAINER, K, GORNIK, E, HALLER, E. E, HANSEN, W. L

    Published in Applied physics letters (13-04-1992)
    “…We investigate the far infrared emission spectra obtained from the so-called p-Ge light-heavy-hole laser. The occurrence of a frequency gap between the…”
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  9. 9

    High performance antimony-doped germanium photoconductors by Beeman, J.W., Hansen, W.L., Dubon, O.D., Haller, E.E.

    Published in Infrared physics & technology (01-12-1996)
    “…We have produced two new single crystals of antimony-doped germanium that were specifically designed for far-infrared photoconductor applications…”
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  10. 10

    Pressure dependence of Schottky barrier height at the Pt/GaAs interface by SHAN, W, LI, M. F, YU, P. Y, HANSEN, W. L, WALUKIEWICZ, W

    Published in Applied physics letters (12-09-1988)
    “…The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was…”
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  12. 12

    High purity isotopically enriched 70Ge and 74Ge single crystals: Isotope separation, growth, and properties by Itoh, Kohei, Hansen, W.L., Haller, E.E., Farmer, J.W., Ozhogin, V.I., Rudnev, A., Tikhomirov, A.

    Published in Journal of materials research (01-06-1993)
    “…70Ge and 74Ge isotopes were successfully separated from natural Ge and zone purified. Several highly enriched, high purity 70Ge and 74Ge single crystals were…”
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  13. 13

    Three holes bound to a double acceptor - Be(+) in germanium by Haller, E. E., Mcmurray, R. E., Jr, Falicov, L. M., Haegel, N. M., Hansen, W. L.

    Published in Physical review letters (19-09-1983)
    “…A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single…”
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  14. 14

    Low-temperature oxygen diffusion in silicon by HANSEN, W. L, PEARTON, S. J, HALLER, E. E

    Published in Applied physics letters (01-01-1984)
    “…Using the formation of the proposed neutral acceptor-hydroxyl complex AOH as a marker, the diffusion coefficient of a mobile oxygen species introduced in…”
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  15. 15

    Prolactin secretion in women after plastic breast augmentation and reduction by Soules, M R, Hansen, L W, Tucker, K R, Buehler, P K

    Published in Annals of plastic surgery (01-10-1986)
    “…Prolactin secretion in women undergoing augmentation and reduction mammaplasties was studied by determining serum prolactin concentrations preoperatively,…”
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    Hydrogen Concentration and Distribution in High-Purity Germanium Crystals by Hansen, W. L., Haller, E. E., Luke, P. N.

    Published in IEEE transactions on nuclear science (01-01-1982)
    “…High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity…”
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  18. 18

    Protective Surface Coatings on Semiconductor Nuclear Radiation Detectors by Hansen, W. L., Haller, E. E., Hubbard, G. S.

    Published in IEEE transactions on nuclear science (01-01-1980)
    “…Surface states on germanium p-i-n junctions have been investigated using deep level transient spectroscopy (DLTS) and collimated beams of 60 keV gamma-rays…”
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  19. 19

    Miniaturization of p  -Ge lasers: Progress toward continuous wave operation by Bründermann, E., Linhart, A. M., Röser, H. P., Dubon, O. D., Hansen, W. L., Haller, E. E.

    Published in Applied physics letters (04-03-1996)
    “…We have observed intervalence band laser action in Al-doped germanium crystals with volumes as small as 0.03 cm3, one order of magnitude smaller than…”
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  20. 20

    Double acceptor doped Ge: A new medium for inter-valence-band lasers by Bründermann, E., Linhart, A. M., Reichertz, L., Röser, H. P., Dubon, O. D., Hansen, W. L., Sirmain, G., Haller, E. E.

    Published in Applied physics letters (27-05-1996)
    “…We report on intervalence-band laser emission from Be- and Zn-doped germanium crystals. The duty cycle of 10−3 at a repetition rate of 1 kHz is one order of…”
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