Search Results - "HANAMAKI, Yoshihiko"

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  1. 1
    Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation

    Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation by Hanamaki, Yoshihiko, Takeuchi, Tetsuya, Ogasawara, Nagaatsu, Shiraki, Yasuhiro

    Published in Journal of crystal growth (01-05-1997)
    “…We investigated the optimum growth conditions for fabrication of a high-reflective distributed Bragg reflector (DBR) with extremely flat heterointerfaces on (4…”
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  2. 2
    Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

    Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates by HANAMAKI, Y, WATANUKI, Y, AKIYAMA, H, TAKEUCHI, T, OGASAWARA, N, SHIRAKI, Y

    Published in Japanese Journal of Applied Physics (01-02-1996)
    “…We investigated the optimum molecular beam epitaxy (MBE) growth conditions for fabrication of a high-reflectivity distributed Bragg reflector (DBR) on (411)A…”
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  3. 3
    High-Power 1.06-μm Near-Diffraction-Limited Planar Tapered Amplifier Injected With Seed Light Through a Fiber Biconical Microlens

    High-Power 1.06-μm Near-Diffraction-Limited Planar Tapered Amplifier Injected With Seed Light Through a Fiber Biconical Microlens by SAKAI, Kiyohide, SHIMADA, Naoyuki, SHIBATA, Kimitaka, HANAMAKI, Yoshihiko, ITAKURA, Shigetaka, IMAKI, Masao, YAGI, Tetsuya, HIRANO, Yoshihito

    Published in Journal of lightwave technology (01-03-2008)
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  4. 4
    High-Power Tapered Unstable-Resonator Laser Diode With a Fiber-Bragg-Grating Reflector

    High-Power Tapered Unstable-Resonator Laser Diode With a Fiber-Bragg-Grating Reflector by Sakai, K., Itakura, S., Shimada, N., Shibata, K., Hanamaki, Y., Yagi, T., Hirano, Y.

    Published in IEEE photonics technology letters (15-08-2009)
    “…We designed a tapered unstable-resonator laser diode consisting of a 3-mm-long tapered amplifier and a fiber-Bragg-grating reflector, both of which were…”
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  5. 5
    High-Power 1.06- \mu} Near-Diffraction-Limited Planar Tapered Amplifier Injected With Seed Light Through a Fiber Biconical Microlens

    High-Power 1.06- \mu} Near-Diffraction-Limited Planar Tapered Amplifier Injected With Seed Light Through a Fiber Biconical Microlens by Sakai, K., Shimada, N., Shibata, K., Hanamaki, Y., Itakura, S., Imaki, M., Yagi, T., Hirano, Y.

    Published in Journal of lightwave technology (15-03-2008)
    “…We designed a 1.06-mum single-quantum-well (SQW) InGaAs/AlGaAs planar tapered amplifier that was injected with seed light of a fiber Bragg grating stabilized…”
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  6. 6
    1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer

    1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer by MIYAZAKI, Yasunori, TADA, Hitoshi, TOKIZAKI, Shin-Ya, TAKAGI, Kazuhisa, HANAMAKI, Yoshihiko, AOYAGI, Toshitaka, MITSUI, Yasuo

    Published in IEEE journal of quantum electronics (01-08-2003)
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  7. 7
    A highly luminescent crescent-shaped tensile-strained [formula omitted] quantum wire laser structure

    A highly luminescent crescent-shaped tensile-strained [formula omitted] quantum wire laser structure by Pan, Wugen, Yaguchi, Hiroyuki, Hanamaki, Yoshihiko, Ishikawa, Mitsuteru, Kaneko, Yasuhisa, Onabe, Kentaro, Ito, Ryoichi, Shiraki, Yasuhiro

    Published in Journal of crystal growth (01-01-1997)
    “…We report a highly luminescent crescent-shaped tensile-strained GaAsPAlGaAs quantum wire (QWR) laser structure on 3 μm periodic V-grooves grown by low-pressure…”
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  8. 8
    A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure

    A highly luminescent crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire laser structure by PAN, W, YAGUCHI, H, HANAMAKI, Y, ISHIKAWA, M, KANEKO, Y, ONABE, K, ITO, R, SHIRAKI, Y

    Published in Journal of crystal growth (1997)
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  9. 9
    The balanced photodetector buried with semi-insulating InP

    The balanced photodetector buried with semi-insulating InP by Nakaji, M., Ishimura, E., Hanamaki, Y., Shimomura, K., Aoyagi, T., Ishikawa, T.

    “…The well-balanced twin photodiodes with over 45 GHz bandwidth on one chip have been developed. It is realized by removing Si pile-up region due to…”
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  10. 10
    Spontaneous-emission-lifetime alteration in In x Ga 1 − x As /GaAs vertical-cavity surface-emitting laser structures

    Spontaneous-emission-lifetime alteration in In x Ga 1 − x As /GaAs vertical-cavity surface-emitting laser structures by Hanamaki, Yoshihiko, Kinoshita, Hiromu, Akiyama, Hidefumi, Ogasawara, Nagaatsu, Shiraki, Yasuhiro

    Published in Physical review. B, Condensed matter (01-08-1997)
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