Search Results - "HAMAGUCHI, C"

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  1. 1

    Proposal of high efficiency solar cells with closely stacked InAs/In0.48Ga0.52P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate–band by Yoshikawa, H., Kotani, T., Kuzumoto, Y., Izumi, M., Tomomura, Y., Hamaguchi, C.

    Published in Applied physics letters (07-07-2014)
    “…We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using wide–gap matrix…”
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    Journal Article
  2. 2

    CATALOGIC 301C model - validation and improvement by Dimitrova, N. H., Dermen, I. A., Todorova, N. D., Vasilev, K. G., Dimitrov, S. D., Mekenyan, O. G., Ikenaga, Y., Aoyagi, T., Zaitsu, Y., Hamaguchi, C.

    Published in SAR and QSAR in environmental research (03-06-2017)
    “…In Europe, REACH legislation encourages the use of alternative in silico methods such as (Q)SAR models. According to the recent progress of Chemical Substances…”
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    Journal Article
  3. 3

    High Electron Mobility Limited by Remote Impurity Scattering by Hamaguchi, C.

    Published in Journal of computational electronics (01-12-2003)
    “…Mobility of two-dimensional electron gas due to remote impurity scattering is evaluated in modulation-doped AlGaAs/GaAs heterostructures. Observed high…”
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    Journal Article
  4. 4

    Contact and distributed effects in quantum well infrared photodetectors by Ershov, M., Ryzhii, V., Hamaguchi, C.

    Published in Applied physics letters (20-11-1995)
    “…We propose a simple distributed model for intersubband quantum well infrared photodetectors (QWIPs), which explicitly takes into account the injecting…”
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  5. 5

    Magnetic-field-induced suppression of electronic conduction in a superlattice by PATANE, A, MORI, N, FOWLER, D, EAVES, L, HENINI, M, MAUDE, D. K, HAMAGUCHI, C, AIREY, R

    Published in Physical review letters (01-10-2004)
    “…We use a magnetic field applied along the axis of a semiconductor superlattice (SL) as a controllable means of creating a one-dimensional band structure. We…”
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  6. 6

    Self-consistent calculation of two-dimensional electronic states in SOI-MOSFETs using full-band modeling by Takeda, H., Mori, N., Hamaguchi, C.

    Published in Physica. B, Condensed matter (01-03-2002)
    “…Two-dimensional electronic states in SOI-MOSFETs are numerically evaluated by solving the Schrödinger and Poisson equations self-consistently. An empirical…”
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    Journal Article Conference Proceeding
  7. 7

    Electron transport in quantum dot arrays: self-consistent modeling by Kobayashi, M., Miyahara, S., Mori, N., Hamaguchi, C.

    “…Electron propagation through quantum dot arrays is simulated by self-consistently solving Schrödinger and Poisson equations. A stabilized variant of the…”
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  8. 8

    Study of electron–hole generation and recombination in semiconductors using the Osaka free electron laser by Mori, N., Takahashi, T., Kambayashi, T., Kubo, H., Hamaguchi, C., Eaves, L., Foxon, C.T., Patanè, A., Henini, M.

    Published in Physica. B, Condensed matter (01-03-2002)
    “…Band-gap luminescence from a variety of compound semiconductors has been observed under intense mid-infra-red irradiation by the free electron laser (FEL) at…”
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    Journal Article Conference Proceeding
  9. 9

    Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs by Takeda, H., Mori, N., Hamaguchi, C.

    Published in Journal of computational electronics (01-12-2003)
    “…Drain-current-gate-voltage characteristics of 13 nm- and 9 nm-gate-length MOSFETs are simulated using a nonequilibrium Green's function (NEGF) technique. The…”
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  10. 10

    Transport in quantum dot arrays by Mori, N, Ishida, T, Takamura, Y, Hamaguchi, C

    “…Straight and zigzag quantum dot arrays (QDAs) are fabricated on GaAs/AlGaAs single heterostructures by using electron-beam lithography and wet-chemical…”
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    Journal Article
  11. 11

    Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling by Takeda, H, Mori, N, Hamaguchi, C

    Published in Journal of computational electronics (01-12-2002)
    “…Effects of conduction-band non-parabolicity on electron transport properties in silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors…”
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  12. 12
  13. 13

    Temperature dependence of the conductance in quasi-one-dimensional superlattices by Mori, N, Hamaguchi, C, Eaves, L, Main, P.C

    Published in Microelectronic engineering (01-08-2002)
    “…We have performed a Monte Carlo simulation of the electron motion in a Landau-quantized GaAs/AlAs superlattice to investigate the effect of increasing the…”
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    Journal Article Conference Proceeding
  14. 14

    Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses by Mori, N, Nakano, H, Kubo, H, Hamaguchi, C, Eaves, L

    Published in Physica. B, Condensed matter (01-12-1999)
    “…A full band Monte Carlo simulation for electron motion in a GaAs crystal under mid-infrared free-electron-laser (FEL) pulses is performed. Average electron…”
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  15. 15

    Monte Carlo simulation of miniband conduction in Landau-quantized superlattices by Mori, N, Hamaguchi, C, Eaves, L, Main, P.C

    Published in Physica. B, Condensed matter (01-04-2001)
    “…Monte Carlo simulation of electron motion in a Landau-quantized GaAs/AlAs superlattice with narrow miniband width is performed to investigate the effect of a…”
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    Journal Article Conference Proceeding
  16. 16

    Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs by Takeda, H, Mori, N, Hamaguchi, C

    Published in Journal of computational electronics (01-07-2002)
    “…A full-band Monte Carlo simulation of two-dimensional electron gas is performed to study effects of the non-parabolicity of the energy band structure on the…”
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    Journal Article
  17. 17

    Photoluminescence from hot electrons in quasi-one- and two- dimensional systems by Momose, H., Inui, Y., Hamaguchi, C.

    Published in Physica. B, Condensed matter (01-12-1999)
    “…We report on the experimental studies of photoluminescence from hot electrons in quantum wires which were fabricated on AlGaAs/GaAs hetero-structures by using…”
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  18. 18

    Breakdown of optical selection rules in a highly biased quantum well by Imai, T., Morifuji, M., Hamaguchi, C., Vogl, P., Böhm, G., Tränkle, G., Weimann, G.

    “…Optical transitions between electronic states in a quantum well are governed by symmetry of the states. The selection rule and its breakdown in electric fields…”
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  19. 19

    Magneto-tunneling spectroscopy of quantum structures by Mori, N., Hamaguchi, C., Patanè, A., Eaves, L., Main, P.C.

    Published in Microelectronic engineering (01-08-2002)
    “…We perform numerical calculations to investigate the validity of magneto-tunneling spectroscopy in resonant tunneling diodes as a means of mapping…”
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    Journal Article Conference Proceeding
  20. 20

    Electronic structures in a quantum dot with asymmetric confining potential by Ezaki, T, Sugimoto, Y, Mori, N, Hamaguchi, C

    Published in Physica. B, Condensed matter (01-06-1998)
    “…N-electron eigenstates in circular-, elliptic-, and triangular-shaped quantum dots (QDs) are calculated by numerically diagonalizing the N-particle…”
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