Search Results - "HAAK, U"

Fabrication of MEMS actuators from the BEOL of a 0.25μm BiCMOS technology platform by Kulse, P., Birkholz, M., Ehwald, K.-E., Bauer, J., Drews, J., Haak, U., Höppner, W., Katzer, J., Schulz, K., Wolansky, D.

“…[Display omitted] ► Preparation of monolithic integrated 50nm thin TiN actuator. ► Using a standard BEOL module of a 0.25 BiCMOS technology. ► Introducing a…”
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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps by Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of…”
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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay by Heinemann, B, Barth, R, Bolze, D, Drews, J, Fischer, G G, Fox, A, Fursenko, O, Grabolla, T, Haak, U, Knoll, D, Kurps, R, Lisker, M, Marschmeyer, S, Rücker, H, Schmidt, D, Schmidt, J, Schubert, M A, Tillack, B, Wipf, C, Wolansky, D, Yamamoto, Y

“…A SiGe HBT technology featuring f T /f max /BV CEO =300GHz/500GHz/1.6V and a minimum CML ring oscillator gate delay of 2.0 ps is presented. The…”
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Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology by Winkler, W, Borngräber, J, Heinemann, B, Rücker, H, Barth, R, Bauer, J, Bolze, D, Drews, J, Ehwald, K.-E, Grabolla, T, Haak, U, Höppner, W, Knoll, D, Krüger, D, Kuck, B, Kurps, R, Marschmeyer, M, Richter, H, Schley, P, Schmidt, D, Scholz, R, Tillack, B, Wolansky, D, Wulf, H.-E, Yamamoto, Y, Zaumseil, P

“…Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 μm CMOS platform. The resulting SiGe:C BiCMOS technology offers a…”
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Ultrathin TiN Membranes as a Technology Platform for CMOS-Integrated MEMS and BioMEMS Devices by Birkholz, M., Ehwald, K.-E., Kulse, P., Drews, J., Fröhlich, M., Haak, U., Kaynak, M., Matthus, E., Schulz, K., Wolansky, D.

“…A standard complementary metal‐oxide‐semiconductor (CMOS) process is successfully modified to encompass the preparation of suspended TiN membranes of only 50…”
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Novel collector design for high-speed SiGe:C HBTs by Heinemann, B., Rucker, H., Barth, R., Bauer, J., Bolze, D., Bugiel, E., Drews, J., Ehwald, K.-E., Grabolla, T., Haak, U., Hoppner, W., Knoll, D., Kruger, D., Kuck, B., Kurps, R., Marschmeyer, M., Richter, H.H., Schley, P., Schmidt, D., Scholz, R., Tillack, B., Winkler, W., Wolnsky, D., Wulf, H.-E., Yamamoto, Y., Zaumseil, P.

“…We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion…”
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BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique by Kaynak, M, Wietstruck, M, Scholz, R, Drews, J, Barth, R, Ehwald, K E, Fox, A, Haak, U, Knoll, D, Korndorfer, F, Marschmeyer, S, Schulz, K, Wipf, C, Wolansky, D, Tillack, B, Zoschke, K, Fischer, T, Kim, Y S, Kim, J S, Lee, W.-G, Kim, J W

“…We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch…”
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A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module by Knoll, D., Ehwald, K.E., Heinemann, B., Fox, A., Blum, K., Rucker, H., Furnhammer, F., Senapati, B., Barth, R., Haak, U., Hoppner, W., Drews, J., Kurps, R., Marschmeyer, S., Richter, H.H., Grabolla, T., Kuck, B., Fursenko, O., Schley, P., Scholz, R., Tillack, B., Yamamoto, Y., Kopke, K., Wulf, H.E., Wolansky, D., Winkler, W.

“…We demonstrate an extremely simple, flexible, and hence low-cost SiGe:C BiCMOS process with ample performance for the majority of high volume applications…”
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A low-parasitic collector construction for high-speed SiGe:C HBTs by Heinemann, B., Barth, R., Bolze, D., Drews, J., Formanek, P., Grabolla, T., Haak, U., Hoppner, W., Kopke, D.K., Kuck, B., Kurps, R., Marschmeyer, S., Richter, H.H., Rucker, H., Schley, P., Schmidt, D., Winkler, W., Wolansky, D., Wulf, H.E., Yamamoto, Y.

“…We present a new collector construction for high-speed SiGe:C HBTs that substantially reduces the parasitic base-collector capacitance by selectively…”
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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 [Formula Omitted] SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit…”
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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps by Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji

“…A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f…”
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A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting by RÜCKER, Holger, HEINEMANN, Bernd, KNOLL, Dieter, KORNDÖRFER, Falk, MAI, Andreas, MARSCHMEYER, Steffen, SCHLEY, P, SCHMIDT, D, SCHMIDT, J, ANDREAS SCHUBERT, Markus, SCHULZ, K, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, D, YAMAMOTO, Yuji, BARTH, R, BORNGRÄBER, J, DREWS, J, FISCHER, Gerhard G, FOX, Alexander, GRABOLLA, Thomas, HAAK, U

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2,4-Dimethyl-5-hexanolide, a trail pheromone component of the carpenter ant Camponotus herculeanus by Bestmann, HJ, Haak, U, Kern, F, Hoelldobler, B

“…Here we report the first identification of a trail pheromone component in the genus Camponotus. The ant colony used for our investigations was collected in the…”
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Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS by Rucker, H., Heinemann, B., Barth, R., Bolze, D., Drews, J., Fursenko, O., Grabolla, T., Haak, U., Hoppner, W., Knoll, D., Marschmeyer, S., Mohapatra, N., Richter, H.H., Schley, P., Schmidt, D., Tillack, B., Weidner, G., Wolansky, D., Wulf, H.E., Yamamoto, Y.

“…A new scheme for the integration of high-performance HBTs with thin-film SOI CMOS is demonstrated. The thickness incompatibility problem of thin-body SOI CMOS…”
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Cytogenetics and De Novo/Secondary AML but Not Age Are the Main Determinants for CR Rate and Hematological Recovery in Acute Myeloid Leukemia (AML) Using Intermediate Doses of Cytarabine (AraC) Delivered at the Presumptive Saturating Infusion Rate by Becker, Cornelia, Ali, Haifa Al, Krahl, Rainer, Poenisch, Wolfram, Hasenclever, Dirk, Mantovani, Luisa, Freund, Mathias, Subert, R., Hegenbart, Ute, Wedding, Ulrich, Meran, Johannes, Herold, Michael, Peter, Norma, Knauf, W., Kettner, Erika, Ittel, T., Franke, Astrid, Dachselt, K., Wolf, H.H., Kreibich, Ute, Schulze, Manfred, Assmann, Michael, Grobe, Norbert, Huhn, Renate, Zschuppe, Ernst, Schirmer, Veronika, Haak, U., Klinkenstein, C., Opitz, B., Pasold, Rita, Fiedler, F., Winkelmann, C., Helbig, Werner, Niederwieser, Dietger

“…Outcome of elderly patients with AML is usually poor. Increased incidence of high risk AML and intolerance against dose escalation are the main causes for…”
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A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps by Rucker, H., Heinemann, B., Winkler, W., Barth, R., Borngraber, J., Drews, J., Fischer, G.G., Fox, A., Grabolla, T., Haak, U., Knoll, D., Korndorfer, F., Mai, A., Marschmeyer, S., Schley, P., Schmidt, D., Schmidt, J., Schulz, K., Tillack, B., Wolansky, D., Yamamoto, Y.

“…A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO…”
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Species-specificity in trail pheromones and Dufour's gland contents ofCamponotus atriceps andC. floridanus (Hymenoptera: Formicidae): Pheromones 105 by Haak, U., H lldobler, B., Bestmann, H. J., Kern, F.

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Detection and reduction of via faults by Wolansky, D., Bauer, J., Haak, U., Hoppner, W., Katzer, J., Kulse, P., Mai, A., Rucker, H., Scheit, A., Schulz, K.

“…A methodology for fast detection of via faults is presented. Defective vias in large via chains are detected by subsequent use of a parametric tester for…”
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SiGe HBT module with 2.5 ps gate delay by Fox, A., Heinemann, B., Barth, R., Bolze, D., Drews, J., Haak, U., Knoll, D., Kuck, B., Kurps, R., Marschmeyer, S., Richter, H.H., Rucker, H., Schley, P., Schmidt, D., Tillack, B., Weidner, G., Wipf, C., Wolansky, D., Yamamoto, Y.

“…We present a double-polysilicon SiGe:C HBT module showing a CML ring oscillator (RO) gate delay tau of 2.5 ps, and f T / f max /BV CEo values of 300 GHz/350…”
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SiGe BiCMOS Technology with 3.0 ps Gate Delay by Rucker, H., Fursenko, O., Grabolla, T., Haak, U., Hoppner, W., Knoll, D., Kopke, K., Kuck, B., Mai, A., Marschmeyer, S., Morgenstern, T., Heinemann, B., Richter, H. H., Schley, P., Schmidt, D., Schulz, K., Tillack, B., Weidner, G., Winkler, W., Wolansky, D., Wulf, H.-E., Yamamototo, Y., Barth, R., Bauer, J., Blum, K., Bolze, D., Drews, J., Fischer, G. G., Fox, A.

“…This work reports on a 130 nm BiCMOS technology with high-speed SiGe:C HBTs featuring a transit frequency of 255 GHz and a maximum oscillation frequency of 315…”
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