Search Results - "Hössinger, Andreas"

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation by Šimonka, Vito, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation…”
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Automatic grid refinement for thin material layer etching in process TCAD simulations by Lenz, Christoph, Manstetten, Paul, Aguinsky, Luiz Felipe, Rodrigues, Francio, Hössinger, Andreas, Weinbub, Josef

“…Thin material layers are common structures in modern semiconductor device fabrication and are particularly necessary for light-emitting diodes and…”
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Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations by Lenz, Christoph, Toifl, Alexander, Quell, Michael, Rodrigues, Francio, Hössinger, Andreas, Weinbub, Josef

“…•Improved simulation time of selective epitaxial growth simulation.•Curvature of the waver surface utilized to detect features.•Locally increased grid…”
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Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures by Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Reiter, Tobias, Klemenschits, Xaver, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef

“…Atomic layer deposition allows for precise control over film thickness and conformality. It is a critical enabler of high aspect ratio structures, such as 3D…”
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A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions by Lenz, Christoph, Aguinsky, Luiz Felipe, Hössinger, Andreas, Weinbub, Josef

“…The level-set method is widely used in expanding front simulations in numerous fields of computational research, such as computer graphics, physics, or…”
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A shared memory parallel multi-mesh fast marching method for re-distancing by Diamantopoulos, Georgios, Hössinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

“…A common problem arising in expanding front simulations is to restore the signed distance field property of a discretized domain (i.e., a mesh), by calculating…”
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Accelerating Flux Calculations Using Sparse Sampling by Gnam, Lukas, Manstetten, Paul, Hössinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

“…The ongoing miniaturization in electronics poses various challenges in the designing of modern devices and also in the development and optimization of the…”
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Accelerated redistancing for level set-based process simulations with the fast iterative method by Weinbub, Josef, Hössinger, Andreas

“…The finite iterative method is compared to an industry-hardened fast marching method for accelerating the redistancing step essential for Level Set-based…”
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Shared-memory block-based fast marching method for hierarchical meshes by Quell, Michael, Diamantopoulos, Georgios, Hössinger, Andreas, Weinbub, Josef

“…The fast marching method is commonly used in expanding front simulations in various fields, such as, fluid dynamics, computer graphics, and in…”
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Evaluation of the shared-memory parallel Fast Marching Method for re-distancing problems by Diamantopoulos, Georgios, Weinbub, Josef, Hossinger, Andreas, Selberherr, Siegfried

“…The Fast Marching Method is widely used for the solution of the Eikonal equation in problems arising in science and engineering applications. A common…”
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The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy by Toifl, Alexander, Quell, Michael, Klemenschits, Xaver, Manstetten, Paul, Hossinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

“…We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor…”
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Modeling the impact of incomplete conformality during atomic layer processing by Reiter, Tobias, Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Weinbub, Josef, Hössinger, Andreas, Filipovic, Lado

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Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon by Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Wachter, Georg, Trupke, Michael, Schmid, Ulrich, Hössinger, Andreas, Weinbub, Josef

“…•Low-bias plasma etching of Si using SF6 is a near-isotropic alternative to wet etching.•Precise topography simulation of the final etched geometries is…”
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3D modeling of feature-scale fluorocarbon plasma etching in silica by Rodrigues, Frâncio, Felipe Aguinsky, Luiz, Lenz, Christoph, Hössinger, Andreas, Weinbub, Josef

“…Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic…”
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Parallelization of a Monte Carlo ion implantation simulator by Hossinger, A., Langer, E., Selberherr, S.

“…We present a parallelization method based on message passing interface (MPI) for a Monte Carlo program for two-dimensional (2-D) and three-dimensional (3-D)…”
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Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation by Šimonka, Vito, Nawratil, Georg, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for…”
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Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity by Manstetten, Paul, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…We present a computationally efficient framework to compute the neutral flux in high aspect ratio structures during three-dimensional plasma etching…”
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Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD by Quell, Michael, Suvorov, Vasily, Hossinger, Andreas, Weinbub, Josef

“…The level-set method is widely used for high-accuracy 3-D topography simulations in process technology computer-aided design (TCAD) because of its robustness…”
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Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide by Simonka, Vito, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

“…Accurate modeling of the electrical properties of impurities in semiconductors is essential for the mandatory support of the development of novel semiconductor…”
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Molecular dynamics study of Al implantation in 4H-SiC by Leroch, Sabine, Stella, Robert, Hossinger, Andreas, Filipovic, Lado

“…We have performed a molecular dynamics study of Al-implantation in 4H-SiC while investigating the types of defects produced and their quantity depending on the…”
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