Search Results - "Höfler, G. E."

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency by Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., Collins, D.

“…A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the…”
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Observation of interstitial carbon in heavily carbon-doped GaAs by HÖFLER, G. E, HSIEH, K. C

“…Nuclear reaction analysis, utilizing the 12C(d, p)13C reaction, in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used…”
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Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers by Höfler, G. E., Vanderwater, D. A., DeFevere, D. C., Kish, F. A., Camras, M. D., Steranka, F. M., Tan, I.-H.

“…The feasibility of wafer bonding 50-nm diameter wafers consisting of GaP-AlGaInP light-emitting diode epitaxial films to GaP substrates is demonstrated. Wafer…”
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Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II-VI heterostructures and devices by GUHA, S, DEPUYDT, J. M, QIU, J, HOFLER, G. E, HAASE, M. A, WU, B. J, CHENG, H

“…We have investigated the role of stacking faults in high quality ZnSxSe1−x heterostructures and a ZnSxSe1−x/CdxZn1−xSe based II-VI blue-green quantum well…”
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Low-threshold buried-ridge II-VI laser diodes by HAASE, M. A, BAUDE, P. F, HAGEDORN, M. S, QIU, J, DEPUYDT, J. M, CHENG, H, GUHA, S, HÖFLER, G. E, WU, B. J

“…Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide…”
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Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers by TAN, I.-H, VANDERWATER, D. A, HUANG, J.-W, HOFLER, G. E, KISH, F. A, CHEN, E. I, OSTENTOWSKI, T. D

“…The AlGaInP/GaP wafer-bonded transparent-substrate (TS) light-emitting diodes (LEDs) have been shown to exhibit luminous efficiencies exceeding many…”
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Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD by STOCKMAN, S. A, HANSON, A. W, LICHTENTHAL, S. M, FRESINA, M. T, HÖFLER, G. E, HSIEH, K. C, STILLMAN, G. E

“…Article abstract not included…”
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Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs by KISH, F. A, MARANOWSKI, S. A, HÖFLER, G. E, HOLONYAK, N. JR, CARACCI, S. J, DALLESASSE, J. M, HSIEH, K. C

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Carbon redistribution during molecular beam epitaxy of GaAs n-i-p+-i-n structures using trimethylgallium as the p-type dopant by HÖFLER, G. E, BAILLARGEON, J. N, HSIEH, K. C, CHENG, K. Y

“…The redistribution of carbon during molecular beam epitaxy (MBE) growth of GaAs n-i-p+-i-n structures using silicon and carbon as n-type and p-type dopants,…”
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Wide band gap MgZnSSe grown on (001) GaAs by molecular beam epitaxy by Wu, B. J., DePuydt, J. M., Haugen, G. M., Höfler, G. E., Haase, M. A., Cheng, H., Guha, S., Qiu, J., Kuo, L. H., Salamanca-Riba, L.

“…We report molecular beam epitaxial study of wide band gap (≳2.9 eV at room temperature) MgZnSSe on (001) oriented GaAs using ZnS, Mg, Zn, and Se sources…”
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High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes by RICHARD, T. A, CHEN, E. I, SUGG, A. R, HÖFLER, G. E, HOLONYAK, N. JR

“…Data are presented showing that a GaAs p-n tunnel diode can be modified, and improved, with the introduction of an InxGa1−xAs layer (Lz∼100 Å) in the barrier…”
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100〉 dark line defect in II-VI blue-green light emitters by Guha, S., Cheng, H., Haase, M. A., DePuydt, J. M., Qiu, J., Wu, B. J., Hofler, G. E.

“…We have carried out a microstructural study of the 〈100〉 dark line defect that forms during degradation of II-VI blue-green light emitters. We find that these…”
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Low-threshold disorder-defined native-oxide delineated buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers by KISH, F. A, CARACCI, S. J, HOLONYAK, N. JR, DALLESASSE, J. M, HOFLER, G. E, BURNHAM, R. D, SMITH, S. C

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High-brightness AlGaInP light emitting diodes by Vanderwater, D.A., Tan, I.-H., Hofler, G.E., Defevere, D.C., Kish, F.A.

“…First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters…”
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Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1-xas-GaAs superlattices by WU, C. H, HSIEH, K. C, HÖFLER, G. E, EL-ZEIN, N, HOLONYAK, N. JR

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High-brightness AlGaInP light emitting diodes: Optoelectronics technology by VANDERWATER, D. A, TAN, I.-H, HÖFLER, G. E, DEFEVERE, D. C, KISH, F. A

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Photodegradation of Cd x Zn1− x Se quantum wells by Haugen, G. M., Guha, S., Cheng, H., DePuydt, J. M., Haase, M. A., Höfler, G. E., Qiu, J., Wu, B. J.

“…Photoluminescence imaging was used to study photodegradation in CdZnSe quantum wells, important to II-VI based blue-green light emitter technology. The…”
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Diffusion of manganese in GaAs and its effect on layer disordering in Al x Ga1− x As-GaAs superlattices by Wu, C. H., Hsieh, K. C., Höfler, G. E., EL-Zein, N., Holonyak, N.

“…Several diffusion runs of Mn in GaAs are performed in sealed quartz ampoules with four different Mn-containing sources: (a) solid crystal granules of Mn, (b)…”
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40-gb/s EA modulators with wide temperature operation and negative chirp by Billia, L, Zhu, Jintian, Ranganath, T, Bour, D P, Corzine, S W, Hofler, G E

“…Broad bandwidth external modulators are widely used in optical fiber networks to avoid the chirp associated with the direct modulation of laser diode sources…”
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Dependence on doping type ( p / n ) of the water vapor oxidation of high-gap Al x Ga1− x As by Kish, F. A., Maranowski, S. A., Höfler, G. E., Holonyak, N., Caracci, S. J., Dallesasse, J. M., Hsieh, K. C.

“…The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high-gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements…”
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