Search Results - "Hérino, R."

Luminescence and structural properties of porous silicon with ZnSe intimate contact by MONTES, L, HERINO, R

“…The incorporation of ZnSe into luminescent porous silicon layers (PSL) by electrochemical co-deposition of Zn and Se is described by focusing on the critical…”
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Fourier transform IR monitoring of porous silicon passivation during post-treatments such as anodic oxidation and contact with organic solvents by Hory, M.A., Hérino, R., Ligeon, M., Muller, F., Gaspard, F., Mihalcescu, I., Vial, J.C.

“…The surface passivation of porous silicon is a determining factor in the emission efficiency of the material. The hydrogen surface coverage has been shown to…”
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Near‐field optics on silicon–electrolyte junctions by Diesinger, H., Bsiesy, A., Hérino, R., Huant, S.

“…A technique allowing near‐field photocurrent (PC) mapping of silicon surfaces in contact with an electrolyte is presented. The illumination source is an…”
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Investigation on the electrochemical deposition of cadmium telluride in porous silicon by Montès, L, Muller, F, Gaspard, F, Hérino, R

“…Most physical deposition methods are unable to cover the inner surface of porous silicon (PS), whereas electroplating has been successfully used. So it seems…”
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Localized Photo-Assisted Electro-Deposition of Zinc Selenide into p-Type Porous Silicon by Montès, L, Muller, F, Hérino, R

“…Electroplating of II-VI semiconductors like ZnSe into porous silicon can be an efficient and low cost method to fill the porous volume with a transparent and…”
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Photoconductivity of porous silicon in contact with a liquid electrolyte by Sedlačı́k, R, Oswald, J, Hérino, R

“…Spectrally resolved photoconductivity (PC) of p-type porous silicon (PS) samples was measured using a transparent liquid contact which ideally fills the pores…”
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Nano-structuring of silicon and porous silicon by photo-etching using near field optics by Diesinger, H., Bsiesy, A., Hérino, R.

“…A new experimental set‐up has been developed which uses the environment of near field optical microscopy to locally induce photo‐electrochemical reactions at a…”
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Relation between porous silicon photoluminescence and its voltage-tunable electroluminescence by Bsiesy, A., Muller, F., Ligeon, M., Gaspard, F., Hérino, R., Romestain, R., Vial, J. C.

“…The voltage-tunable electroluminescence (VTEL) observed on porous silicon-electrolyte system is investigated in relation with the material photoluminescence…”
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Visible light emission at room temperature from anodized plasma-deposited silicon thin films by Bustarret, E., Ligeon, M., Bruyère, J. C., Muller, F., Hérino, R., Gaspard, F., Ortega, L., Stutzmann, M.

“…In situ boron-doped hydrogenated silicon films plasma-deposited on various conductive substrates (including transparent oxides on glass) have been anodized in…”
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Investigation of the quenching mechanisms of the porous silicon luminescence by Hory, M.A, Bsiesy, A, Hérino, R, Ligeon, M, Muller, F, Vial, J.C

“…This work is devoted to the analysis of the voltage dependence of the luminescence of n-type nanoporous films. The correlations between the behaviour of the…”
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Electroluminescence in the visible range during anodic oxidation of porous silicon films by HALIMAOUI, A, OULES, C, BOMCHIL, G, BSIESY, A, GASPARD, F, HERINO, R, LIGEON, M, MULLER, F

“…Porous silicon/silicon structures under anodic oxidation conditions give rise to an electroluminescence phenomenon in the visible range. Using an optical…”
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Swift atomic ion irradiation of C 60 films: dependence of the damage cross section on the primary ion stopping power by Papaléo, R.M., Hérino, R., Hallén, A., Demirev, P., Sundqvist, B.U.R.

“…Vacuum-sublimated C 60 films (around 1 μm thick) are bombarded with fast atomic ions ( 4He, 12C, 16O, 32S, 79Br, 127I) in the range from 2 to 80 MeV. The…”
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Mechanisms of visible-light emission from electro-oxidized porous silicon by VIAL, J. C, BSIESY, A, GASPARD, F, HERINO, R, LIGEON, M, MULLER, F, ROMESTAIN, R, MACFARLANE, R. M

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Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in the potentiostatic regime by Billat, S., Gaspard, F., Hérino, R., Ligeon, M., Muller, F., Romestain, F., Vial, J.C.

“…Visible light emission is obtained during the anodic oxidation of heavily doped p-type porous silicon layers, with similar characteristics to the…”
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Voltage-controlled spectral shift of porous silicon electroluminescence by BSIESY, A, MULLER, F, LIGEON, M, GASPARD, F, HERINO, R, ROMESTAIN, R, VIAL, J. C

“…In this paper, it is reported that the electroluminescence (EL) of porous silicon shows a reversible spectral shift as large as 270 nm for an external bias…”
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Light-induced porous silicon photoluminescence quenching by Gelloz, B, Bsiesy, A, Herino, R

“…The photoluminescence quenching of lightly doped p-type porous silicon in contact with aqueous acidic electrolytes is investigated under reverse-bias…”
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Optical and structural studies of GaN 3D structures selectively grown by MOCVD by Viste, P., Colombier, I., Donatini, F., Vial, J.C., Baldeck, P., Herino, R., Duc-Maugé, A., Godfroyd, J., Lacroute, Y., Sacilotti, M.

“…This paper presents preliminary results on the selective growth of three-dimensional (3D) micrometric metallic structures by the MOCVD technique. The 3D…”
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Formation and characterization of CdS/methyl-grafted porous silicon junctions by Gros-Jean, M, Herino, R, Chazalviel, J.-N, Ozanam, F, Lincot, D

“…The incorporation of cadmium sulfide into fresh and methyl-grafted porous silicon layers is investigated. Methyl grafting is obtained by an electrochemical…”
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Anodic oxidation of p+-type porous silicon having pores uniformly covered with Ge by Gelloz, B., Halimaoui, A., Campidelli, Y., Bsiesy, A., Koshida, N., Herino, R.

“…Anodic oxidation of porous silicon, the inner surface of which is covered by a thin layer of Ge, has been studied. The Ge layer is first oxidized during a time…”
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Voltage-induced modifications of porous silicon luminescence by Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R., Vial, J.C.

“…The remarkable voltage-tunable electroluminescence (VTEL) observed on porous silicon—electrolyte junctions is investigated in relation to material morphology…”
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