Search Results - "Gyungock Kim"
-
1
Temperature Dependence of Silicon Nanophotonic Ring Resonator With a Polymeric Overlayer
Published in Journal of lightwave technology (01-08-2007)“…In this paper, we investigate the temperature dependence of a silicon-on-insulator-based silicon nanophotonic ring resonator covered with a polymeric…”
Get full text
Journal Article -
2
A fiber-to-chip coupler based on Si/SiON cascaded tapers for Si photonic chips
Published in Optics express (02-12-2013)“…This paper reports a fiber-to-chip coupler consisting of a silicon inverted taper and a silicon oxynitride (SiON) double stage taper, where the cascaded taper…”
Get full text
Journal Article -
3
Low-Crosstalk Silicon Nitride Arrayed Waveguide Grating for the 800-nm Band
Published in IEEE photonics technology letters (15-07-2019)“…We present a silicon nitride (Si x N y ) arrayed waveguide grating (AWG). Crosstalk in this AWG was reduced by decreasing the phase error in a multimode…”
Get full text
Journal Article -
4
36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
Published in IEEE photonics technology letters (15-05-2009)“…We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the…”
Get full text
Journal Article -
5
A 22 to 26.5 Gb/s Optical Receiver With All-Digital Clock and Data Recovery in a 65 nm CMOS Process
Published in IEEE journal of solid-state circuits (01-11-2015)“…This paper presents a 22 to 26.5 Gb/s optical receiver with an all-digital clock and data recovery (AD-CDR) fabricated in a 65 nm CMOS process. The receiver…”
Get full text
Journal Article -
6
Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices
Published in Applied physics letters (13-06-2005)“…An abrupt first-order metal-insulator transition (MIT) as a current jump has been observed by applying a dc electric field to Mott insulator VO2-based…”
Get full text
Journal Article -
7
Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices
Published in New journal of physics (17-05-2004)Get full text
Journal Article -
8
Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects
Published in Scientific reports (10-06-2015)“…When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major…”
Get full text
Journal Article -
9
High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode
Published in Optics express (31-08-2009)“…We present a high phase-shift efficiency Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small…”
Get full text
Journal Article -
10
20-Gb/s 5- \text} and 25-Gb/s 3.8- \text} Area-Efficient Modulator Drivers in 65-nm CMOS
Published in IEEE transactions on circuits and systems. II, Express briefs (01-11-2016)“…This brief presents two area-efficient drivers for a 50-Ω terminated optical modulator. Driver 1 adopts a double cascode with dynamic biasing that enables…”
Get full text
Journal Article -
11
RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator
Published in IEEE photonics technology letters (15-08-2008)“…We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is…”
Get full text
Journal Article -
12
Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film
Published in Optics express (17-09-2007)“…For electrical devices based on vanadium dioxide thin film, various methods have been implemented on the electrical gating of the devices. In this paper, a…”
Get full text
Journal Article -
13
High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5- \mu m Wavelength
Published in IEEE photonics technology letters (01-10-2007)“…Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a…”
Get full text
Journal Article -
14
High-Power Broadband Superluminescent Diode Using Selective Area Growth at 1.5-[mu] m Wavelength
Published in IEEE photonics technology letters (01-10-2007)“…Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a…”
Get full text
Journal Article -
15
20-Gb/s 3.6-VPP-swing source-series-terminated driver with 2-Tap FFE in 65-nm CMOS
Published in 2015 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2015)“…A 20 Gb/s source-series-terminated (SST) driver that provides large output swing for optical modulator is presented. This work incorporates a stacked SST…”
Get full text
Conference Proceeding -
16
A compact 22-Gb/s transmitter for optical links with all-digital phase-locked loop
Published in 2015 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2015)“…An optical transmitter for driving a Mach-Zehnder (MZ) Interferometer is proposed which incorporates an alldigital phase-locked loop (ADPLL) and a…”
Get full text
Conference Proceeding -
17
12.5-Gb/s analog front-end of an optical transceiver in 0.13-μm CMOS
Published in 2013 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2013)“…In this work, a 12.5-Gb/s trans-impedance amplifier (TIA) with capacitive peaking, limiting amplifier (LA) based on the Cherry-Hooper amplifier, and…”
Get full text
Conference Proceeding -
18
High-performance vertical-illumination type 100% Ge-on-Si photodetectors operating up to 50 Gb/s
Published in 2012 38th European Conference and Exhibition on Optical Communications (01-09-2012)“…We present high-performance vertical-illumination type Ge-on-Si photodetectors (PDs) which are ready for optical network applications. The fabricated…”
Get full text
Conference Proceeding -
19
Strain-controlled Selective-area Growth of InGaAsP Films on InP
Published in Japanese Journal of Applied Physics (01-09-2007)Get full text
Journal Article -
20
Cost-Effective 2\times 2 Silicon Nitride Mach-Zehnder Interferometric (MZI) Thermo-Optic Switch
Published in IEEE photonics technology letters (15-04-2018)“…We present cost effective <inline-formula> <tex-math notation="LaTeX">2 \times 2 </tex-math></inline-formula> silicon nitride Mach-Zehnder interferometric…”
Get full text
Journal Article