Search Results - "Gwilliam, R. M."

An efficient room-temperature silicon-based light-emitting diode by Homewood, K. P, Ng, Wai Lek, Lourenço, M. A, Gwilliam, R. M, Ledain, S, Shao, G

“…There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk…”
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Nano-engineered silicon light emitting diodes and optically active waveguides by Homewood, K.P., Lourenço, M.A., Gwilliam, R.M.

“…In this paper, we first introduce and discuss the current state-of-the-art in integrated silicon photonic technology. We argue that the only missing link to…”
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Photoluminescence study of thulium-doped silicon substrates for light emitting diodes by Lourenço, M.A., Opoku, C., Gwilliam, R.M., Homewood, K.P.

“…Photoluminescence in the 1.2–1.35 μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm 3+ state and co-doped with boron…”
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Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes by Lourenço, M.A., Milosavljević, M., Shao, G., Gwilliam, R.M., Homewood, K.P.

“…The dislocation engineered approach makes use of the controlled introduction of dislocation loops into silicon substrates by conventional ion implantation and…”
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Optimising dislocation-engineered silicon light-emitting diodes by MILOSAVLJEVIC, M, LOURENCO, M. A, SHAO, G, GWILLIAM, R. M, HOMEWOOD, K. P

“…This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting…”
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Observation of non-radiative de-excitation processes in silicon nanocrystals by Knights, A. P., Milgram, J. N., Wojcik, J., Mascher, P., Crowe, I., Sherliker, B., Halsall, M. P., Gwilliam, R. M.

“…We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO2. Auger excitation via free…”
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Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator by Lourenço, M. A., Milošević, M. M., Gorin, A., Gwilliam, R. M., Homewood, K. P.

“…We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is…”
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Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition by MILOSAVLJEVIC, M, SHAO, G, GWILLIAM, R. M, GAO, Y, LOURENCO, M. A, VALIZADEH, R, COLLIGON, J. S, HOMEWOOD, K. P

“…We report here on the synthesis of semiconducting amorphous FeSi2 layers by co-sputter deposition of Fe and Si on silicon (100) wafers. The layers were grown…”
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On the role of dislocation loops in silicon light emitting diodes by Lourenço, M. A., Milosavljević, M., Gwilliam, R. M., Homewood, K. P., Shao, G.

“…The role of boron-induced dislocation loops on the suppression of the luminescence thermal quenching in silicon-based light-emitting diodes is investigated…”
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Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices by Lourenço, M.A, Milosavljevic, M, Gwilliam, R.M, Shao, G, Homewood, K.P

“…In this paper, experimental results of a study on iron disilicide light-emitting diodes will be presented. A comparison will be made between the luminescence…”
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Sub-ångstrom experimental validation of molecular dynamics for predictive modeling of extended defect structures in Si by Dudeck, K J, Marqués, L A, Knights, A P, Gwilliam, R M, Botton, G A

“…In this Letter we present the detailed, quantitative comparison between experimentally and theoretically derived structures of the extended {311} defect in…”
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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material by Ishibashi, Y., Kobayashi, T., Prins, A. D., Nakahara, J., Lourenco, M. A., Gwilliam, R. M., Homewood, K. P.

“…We report the influence of excitation wavelength and pressure effects on the photoluminescence (PL) of silicon light‐emitting diode material fabricated by…”
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Ion beam fabricated silicon light emitting diodes by Lourenço, M. A., Siddiqui, M. S. A., Shao, G., Gwilliam, R. M., Homewood, K. P.

“…The addition of efficient optical emission to the functionality of crystalline silicon, because of its already dominant position for use in electronic devices…”
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Ion beam synthesis of superconducting MgB2 thin films by Peng, Nianhua, Shao, G., Jeynes, C., Webb, R. P., Gwilliam, R. M., Boudreault, G., Astill, D. M., Liang, W. Y.

“…Superconducting MgB2 thin films have been fabricated by 80 keV B11 ion implantation into commercial Mg ribbon with B11 doses up to 1018 ions/cm2, followed by…”
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The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films by Southern-Holland, R., Halsall, M.P., Crowe, I.F., Yang, P., Gwilliam, R.M.

“…We present a study of bismuth and aluminium co-implanted silica thin films and the effectiveness of post implantation annealing at activating Bismuth related…”
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Structural improvement of SiGe films by C and F implantation and solid phase crystallization by Rodríguez, A., Olivares, J., Sangrador, J., Rodríguez, T., Ballesteros, C., Castro, M., Gwilliam, R.M.

“…The crystallization kinetics and film microstructure of poly-SiGe layers obtained by solid-phase crystallization of unimplanted, C and F-implanted amorphous…”
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Silicon-based light emitting diode material studied under high pressure by Prins, A. D., Ishibashi, Y., Sasahara, S., Nakahara, J., Lourenco, M. A., Gwilliam, R. M., Kobayashi, T., Nagata, A., Homewood, K. P.

“…The influence of pressure up to around 30 kbar on the photoluminescence (PL) of material from a silicon light‐emitting diode (LED) that operates efficiently at…”
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Sulphur doped silicon light emitting diodes by Galata, S.F., Lourenço, M.A., Gwilliam, R.M., Homewod, K.P.

“…We report electroluminescence experiments from sulphur doped silicon light emitting diodes. Sulphur was implanted into boron doped silicon p–n junctions making…”
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Vacancy-type defects created by single-shot and chain ion implantation of silicon by Coleman, P G, Edwardson, C J, Knights, A P, Gwilliam, R M

“…Vacancy-type defects created by single-energy implantation of Czochralski-grown single-crystal silicon by 4 MeV silicon ions at doses of 1012 and 1013 cm−2…”
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High-resolution DLTS of vacancy–donor pairs in P-, As- and Sb-doped silicon by Auret, F.D., Peaker, A.R., Markevich, V.P., Dobaczewski, L., Gwilliam, R.M.

“…We report results from an experiment designed to characterize, by high-resolution (Laplace) DLTS, the electronic properties of electron radiation induced…”
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