Search Results - "Gwang Hyuk Shin"

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  1. 1

    Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction by Bang, Gyeong Sook, Shim, Gi Woong, Shin, Gwang Hyuk, Jung, Dae Yool, Park, Hamin, Hong, Won G, Choi, Jinseong, Lee, Jaeseung, Choi, Sung-Yool

    Published in ACS omega (31-05-2018)
    “…We report a simple approach to fabricate a pyridinic-N-doped graphene film (N-pGF) without high-temperature heat treatment from perforated graphene oxide…”
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    Journal Article
  2. 2

    A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET by Hagyoul Bae, Choong-Ki Kim, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Dong-Il Lee, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, Yang-Kyu Choi

    Published in IEEE electron device letters (01-02-2016)
    “…Asymmetric source and drain (S/D) series resistances (R S and R D ) are unavoidable in exfoliated MoS 2 field-effect transistors (EM-FETs). Through combining…”
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    Journal Article
  3. 3

    Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric by Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi

    “…We investigated the floating gate memory based on MoS 2 channel with metal nanoparticle charge trapping layer and polymer tunneling dielectric. Here, highly…”
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    Conference Proceeding
  4. 4

    Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction by Shin, Gwang Hyuk, Park, Cheolmin, Lee, Khang June, Jin, Hyeok Jun, Choi, Sung-Yool

    Published in Nano letters (12-08-2020)
    “…Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by…”
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    Journal Article
  5. 5

    Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power by Shin, Gwang Hyuk, Park, Junghoon, Lee, Khang June, Lee, Geon-Beom, Jeon, Hyun Bae, Choi, Yang-Kyu, Yu, Kyoungsik, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (20-02-2019)
    “…In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are…”
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    Journal Article
  6. 6

    Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure by Shin, Gwang Hyuk, Koo, Bondae, Park, Hamin, Woo, Youngjun, Lee, Jae Eun, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (21-11-2018)
    “…We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS2. The resulting p–n heterojunction…”
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    Journal Article
  7. 7

    Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating by Kim, Ho Jin, Lee, Khang June, Park, Junghoon, Shin, Gwang Hyuk, Park, Hamin, Yu, Kyoungsik, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (26-08-2020)
    “…Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency…”
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    Journal Article
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  9. 9

    Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric by Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool

    Published in Advanced functional materials (17-11-2017)
    “…Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of…”
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    Journal Article
  10. 10
  11. 11

    Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure by Park, Hamin, Shin, Gwang Hyuk, Lee, Khang June, Choi, Sung-Yool

    Published in Nano research (01-02-2020)
    “…Stacking of atomically thin layers of two-dimensional materials has revealed extraordinary physical phenomena owing to van der Waals (vdW) interaction at the…”
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    Journal Article
  12. 12

    Ultrasensitive WSe2/α‐In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect by Jin, Hyeok Jun, Park, Cheolmin, Lee, Khang June, Shin, Gwang Hyuk, Choi, Sung‐Yool

    Published in Advanced materials technologies (01-11-2021)
    “…The suppression of dark current is crucial for enhancing the sensitivity of photodetectors, particularly for infrared photodetection. In this study, to…”
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    Journal Article
  13. 13

    High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure by Shin, Gwang Hyuk, Lee, Geon-Beom, An, Eun-Su, Park, Cheolmin, Jin, Hyeok Jun, Lee, Khang June, Oh, Dong Sik, Kim, Jun Sung, Choi, Yang-Kyu, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (29-01-2020)
    “…This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals…”
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    Journal Article
  14. 14

    Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric by Jeon, Hyun Bae, Shin, Gwang Hyuk, Lee, Khang June, Choi, Sung‐Yool

    Published in Advanced electronic materials (01-07-2020)
    “…A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric…”
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    Journal Article
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  16. 16

    Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time by Lee, Khang June, Park, Cheolmin, Jin, Hyeok Jun, Shin, Gwang Hyuk, Choi, Sung-Yool

    Published in Nano research (01-05-2021)
    “…Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical…”
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    Journal Article
  17. 17

    Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS 2 Three-Dimensional-Two-Dimensional Heterostructure by Shin, Gwang Hyuk, Koo, Bondae, Park, Hamin, Woo, Youngjun, Lee, Jae Eun, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (21-11-2018)
    “…We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS . The resulting p-n heterojunction…”
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    Journal Article
  18. 18

    High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS 2 van der Waals Heterostructure by Shin, Gwang Hyuk, Lee, Geon-Beom, An, Eun-Su, Park, Cheolmin, Jin, Hyeok Jun, Lee, Khang June, Oh, Dong Sik, Kim, Jun Sung, Choi, Yang-Kyu, Choi, Sung-Yool

    Published in ACS applied materials & interfaces (29-01-2020)
    “…This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals…”
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    Journal Article
  19. 19

    Ultrasensitive WSe 2 /α‐In 2 Se 3 NIR Photodetector Based on Ferroelectric Gating Effect by Jin, Hyeok Jun, Park, Cheolmin, Lee, Khang June, Shin, Gwang Hyuk, Choi, Sung‐Yool

    Published in Advanced materials technologies (01-11-2021)
    “…The suppression of dark current is crucial for enhancing the sensitivity of photodetectors, particularly for infrared photodetection. In this study, to…”
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    Journal Article
  20. 20

    Memory Devices: Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric (Adv. Funct. Mater. 43/2017) by Woo, Myung Hun, Jang, Byung Chul, Choi, Junhwan, Lee, Khang June, Shin, Gwang Hyuk, Seong, Hyejeong, Im, Sung Gap, Choi, Sung‐Yool

    Published in Advanced functional materials (17-11-2017)
    “…In article number 1703545, Sung‐Yool Choi and co‐workers describe MoS2‐based low‐power nonvolatile charge storage memory devices with a…”
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    Journal Article