Search Results - "Gwang Hyuk Shin"
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Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction
Published in ACS omega (31-05-2018)“…We report a simple approach to fabricate a pyridinic-N-doped graphene film (N-pGF) without high-temperature heat treatment from perforated graphene oxide…”
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Journal Article -
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A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C - V Characteristics in Exfoliated MoS2 FET
Published in IEEE electron device letters (01-02-2016)“…Asymmetric source and drain (S/D) series resistances (R S and R D ) are unavoidable in exfoliated MoS 2 field-effect transistors (EM-FETs). Through combining…”
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3
Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01-09-2016)“…We investigated the floating gate memory based on MoS 2 channel with metal nanoparticle charge trapping layer and polymer tunneling dielectric. Here, highly…”
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Conference Proceeding -
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Ultrasensitive Phototransistor Based on WSe2–MoS2 van der Waals Heterojunction
Published in Nano letters (12-08-2020)“…Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by…”
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Si–MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power
Published in ACS applied materials & interfaces (20-02-2019)“…In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are…”
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Journal Article -
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Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure
Published in ACS applied materials & interfaces (21-11-2018)“…We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS2. The resulting p–n heterojunction…”
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Journal Article -
7
Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating
Published in ACS applied materials & interfaces (26-08-2020)“…Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency…”
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Si–MoS 2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power
Published in ACS applied materials & interfaces (20-02-2019)Get full text
Journal Article -
9
Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric
Published in Advanced functional materials (17-11-2017)“…Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of…”
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10
Ultrasensitive Phototransistor Based on WSe 2 –MoS 2 van der Waals Heterojunction
Published in Nano letters (12-08-2020)Get full text
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11
Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure
Published in Nano research (01-02-2020)“…Stacking of atomically thin layers of two-dimensional materials has revealed extraordinary physical phenomena owing to van der Waals (vdW) interaction at the…”
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Journal Article -
12
Ultrasensitive WSe2/α‐In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect
Published in Advanced materials technologies (01-11-2021)“…The suppression of dark current is crucial for enhancing the sensitivity of photodetectors, particularly for infrared photodetection. In this study, to…”
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Journal Article -
13
High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure
Published in ACS applied materials & interfaces (29-01-2020)“…This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals…”
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Journal Article -
14
Vertical‐Tunneling Field‐Effect Transistor Based on WSe2‐MoS2 Heterostructure with Ion Gel Dielectric
Published in Advanced electronic materials (01-07-2020)“…A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric…”
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Journal Article -
15
Photoconductivity Switching in MoTe 2 /Graphene Heterostructure by Trap-Assisted Photogating
Published in ACS applied materials & interfaces (26-08-2020)Get full text
Journal Article -
16
Atomically thin heterostructure with gap-mode plasmon for overcoming trade-off between photoresponsivity and response time
Published in Nano research (01-05-2021)“…Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical…”
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Journal Article -
17
Vertical-Tunnel Field-Effect Transistor Based on a Silicon-MoS 2 Three-Dimensional-Two-Dimensional Heterostructure
Published in ACS applied materials & interfaces (21-11-2018)“…We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS . The resulting p-n heterojunction…”
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Journal Article -
18
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS 2 van der Waals Heterostructure
Published in ACS applied materials & interfaces (29-01-2020)“…This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals…”
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Journal Article -
19
Ultrasensitive WSe 2 /α‐In 2 Se 3 NIR Photodetector Based on Ferroelectric Gating Effect
Published in Advanced materials technologies (01-11-2021)“…The suppression of dark current is crucial for enhancing the sensitivity of photodetectors, particularly for infrared photodetection. In this study, to…”
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Journal Article -
20
Memory Devices: Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric (Adv. Funct. Mater. 43/2017)
Published in Advanced functional materials (17-11-2017)“…In article number 1703545, Sung‐Yool Choi and co‐workers describe MoS2‐based low‐power nonvolatile charge storage memory devices with a…”
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Journal Article