Search Results - "Gutmann, R. J."

Alterations of BRAF and HIPK2 loci predominate in sporadic pilocytic astrocytoma by YU, J, DESHMUKH, H, GUTMANN, R. J, EMNETT, R. J, RODRIGUEZ, F. J, WATSON, M. A, NAGARAJAN, R, GUTMANN, D. H

“…Independent studies have previously demonstrated that both the HIPK2 and BRAF genes are amplified and rearranged, respectively, in pilocytic astrocytomas…”
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Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics by Xiao, Y., Shah, H., Chow, T.P., Gutmann, R.J.

“…The impact of interconnection parasitic inductance on MOSFET switching characteristics is modeled analytically and evaluated experimentally. Closed-form…”
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Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach by Bloomfield, M.O., Bentz, D.N., Lu, J.-Q., Gutmann, R.J., Cale, T.S.

“…We introduce a hybrid grain-continuum (HGC) approach to compute stresses in structures in which grain structures are important. We demonstrate the HGC approach…”
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Positive flatband voltage shift in MOS capacitors on n-type GaN by Matocha, K., Chow, T.P., Gutmann, R.J.

“…GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900/spl deg/C. The MOS capacitor flatband…”
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1300-V 6H-SiC lateral MOSFETs with two RESURF zones by Banerjee, S., Chow, T.P., Gutmann, R.J.

“…A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has…”
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SiC and GaN bipolar power devices by Chow, T.P., Khemka, V., Fedison, J., Ramungul, N., Matocha, K., Tang, Y., Gutmann, R.J.

“…The present status of the silicon carbide and gallium nitride bipolar power semiconductor devices is reviewed. Several unipolar and bipolar figures of merit…”
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Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes by KHEMKA, V, CHOW, T. P, GUTMANN, R. J

“…The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plasmas has been investigated and characterized using Ni Schottky…”
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Design considerations and experimental analysis for silicon carbide power rectifiers by Khemka, V, Patel, R, Chow, T.P, Gutmann, R.J

“…In this paper we present the investigation of properties of silicon carbide power rectifiers, in particular Schottky, PiN and advanced hybrid power rectifiers…”
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Improved high-voltage lateral RESURF MOSFETs in 4H-SiC by Banerjee, S., Chatty, K., Chow, T.P., Gutmann, R.J.

“…High-voltage lateral RESURF metal oxide semiconductor field effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with…”
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Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique by KUMAR, R. J, GUTMANN, R. J, BORREGO, J. M, DUTTA, P. S, WANG, C. A, MARTINELLI, R. U, NICHOLS, G

“…Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk and surface recombination parameters…”
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A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices by RAJAGOPALAN, G, REDDY, N. S, EHSANI, H, BHAT, I. B, DUTTA, P. S, GUTMANN, R. J, NICHOLS, G, SULIMA, O

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High-voltage lateral RESURF MOSFETs on 4H-SiC by Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J.

“…High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking…”
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XPS and AFM study of chemical mechanical polishing of silicon nitride by Yang, G.-R, Zhao, Y.-P, Hu, Y.Z, Paul Chow, T, Gutmann, Ronald J

“…In this paper, the effect of chemical–mechanical polishing (CMP) of silicon nitride films was investigated using X-ray photoelectron spectroscopy (XPS) and…”
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Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs by BANERJEE, S, CHATTY, K, CHOW, T. P, GUTMANN, R. J

“…N-channel, inversion mode MOSFETs have been fabricated on 4H-SiC using different oxidation procedures, source/drain implant species and implant activation…”
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Contact and via structures with copper interconnects fabricated using dual Damascene technology by Lakshminarayanan, S., Steigerwald, J., Price, D.T., Bourgeois, M., Chow, T.P., Gutmann, R.J., Murarka, S.P.

“…A novel submicron process sequence was developed for the fabrication of CoSi/sub 2//n/sup +/-Si, CoSi/sub 2//p/sup +/-Si ohmic contacts and multilevel…”
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Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs by Chatty, K., Banerjee, S., Chow, T.P., Gutmann, R.J.

“…Hysteresis in room-temperature transfer characteristics between forward (pinch-off voltage, V/sub P/=-15 V) and reverse gate voltage sweeps (V/sub P/=7 V) in…”
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Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs by Chatty, K., Chow, T.P., Gutmann, R.J., Arnold, E., Alok, D.

“…Accumulation-layer electron mobility in n-channel depletion-mode metal oxide semiconductor field effect transistors (MOSFETs) fabricated in 4H-SiC was…”
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Ternary and quaternary antimonide devices for thermophotovoltaic applications by Hitchcock, C.W, Gutmann, R.J, Ehsani, H, Bhat, I.B, Wang, C.A, Freeman, M.J, Charache, G.W

“…Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown…”
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Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics by Gutmann, Ronald J., Steigerwald, Joseph M., You, Lu, Price, David T., Neirynck, Jan, Duquette, David J., Murarka, Shyam P.

“…Chemical-mechanical polishing (CMP) of copper with oxide interlevel dielectrics has been demonstrated as a viable patterning approach for copper interconnect…”
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p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy by EHSANI, H, BHAT, I, HITCHCOCK, C, GUTMANN, R. J, CHARACHE, G, FREEMAN, M

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