Search Results - "Guthrey, H."

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  1. 1

    Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2 by Jensen, S. A., Burst, J. M., Duenow, J. N., Guthrey, H. L., Moseley, J., Moutinho, H. R., Johnston, S. W., Kanevce, A., Al-Jassim, M. M., Metzger, W. K.

    Published in Applied physics letters (27-06-2016)
    “…For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as…”
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    Journal Article
  2. 2

    Critical thickness of atomically ordered III-V alloys by France, R. M., McMahon, W. E., Guthrey, H. L.

    Published in Applied physics letters (12-10-2015)
    “…The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic…”
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    Journal Article
  3. 3

    Explanation of red spectral shifts at CdTe grain boundaries by Moseley, J., Al-Jassim, M. M., Moutinho, H. R., Guthrey, H. L., Metzger, W. K., Ahrenkiel, R. K.

    Published in Applied physics letters (02-12-2013)
    “…We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation…”
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    Journal Article
  4. 4

    Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells Through Nanometer-Scale Potential Imaging by Paul, G., Schall, J. W., Jiang, C.-S., Louks, A., Palmstrom, A., Dutta, N. S., Johnston, S., Guthrey, H., Norman, A., Al-Jassim, M. M., Sulas-Kern, D. B.

    “…Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using…”
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    Conference Proceeding
  5. 5

    Luminescence from poly-Si films and its application to study passivating-contact solar cells by Nguyen, H. T., Li, L., Kremer, F., Cuevas, A., Macdonald, D., Truong, T. N., Yan, D., Samundsett, C., Basnet, R., Tebyetekerwa, M., Guthrey, H., Al-Jassim, M. M., Li, Z.

    “…In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community…”
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    Conference Proceeding
  6. 6

    Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics by Liu, Fude, Jiang, C.-S., Guthrey, H., Johnston, S., Romero, M.J., Gorman, B.P., Al-Jassim, M.M.

    Published in Solar energy materials and solar cells (01-08-2011)
    “…Using upgraded metallurgical-grade silicon (UMG-Si) is a cost-effective and energy-efficient approach for the production of solar cells. Grain boundaries (GBs)…”
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    Journal Article Conference Proceeding
  7. 7

    Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells by Kale, Abhijit S., Nemeth, William, Guthrey, Harvey, Kennedy, Ellis, Norman, Andrew G., Page, Matthew, Al-Jassim, Mowafak, Young, David L., Agarwal, Sumit, Stradins, Paul

    Published in Applied physics letters (25-02-2019)
    “…We report on the microscopic structure of the SiOx layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable…”
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    Journal Article
  8. 8

    Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports by Jiang, C. -S., Yin, Y., Guthrey, H., Park, K., Lee, S. -H., Al-Jassim, M. M.

    Published in Journal of power sources (03-11-2020)
    “…We report on degradation mechanisms of solid-state electrolyte (SSE) based on insights from nm-scale ionic conduction and electronic leakage for solid-state…”
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    Journal Article
  9. 9

    Toward film-silicon solar cells on display glass by Young, D L, Alberi, K, Teplin, C, Martin, I, Stradins, P, Shub, M, Beall, C, Iwaniczko, E, Guthrey, H, Romero, M J, Ta-Ko Chuang, Mozdy, E, Branz, H M

    “…We describe recent progress in developing epitaxial film crystal silicon (c-Si) solar cells that can be grown at low temperature (<;760 °C) on seed-on-glass…”
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    Conference Proceeding
  10. 10

    Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports by Jiang, C.-S., Yin, Y., Guthrey, H., Park, K., Lee, S.-H., Al-Jassim, M.M.

    Published in Journal of power sources (01-01-2021)
    “…We report on degradation mechanisms of solid-state electrolyte (SSE) based on insights from nm-scale ionic conduction and electronic leakage for solid-state…”
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    Journal Article
  11. 11

    Critical thickness of atomically ordered III-V alloys by France, R. M., McMahon, W. E., Guthrey, H. L.

    Published in Applied physics letters (12-10-2015)
    “…The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic…”
    Get full text
    Journal Article
  12. 12
  13. 13

    Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells by Anderson, C.L., Guthrey, H.L., Nemeth, W., Jiang, C.-S., Page, M.R., Stradins, P., Agarwal, S.

    “…State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In…”
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    Journal Article
  14. 14

    Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance by Periasamy, Prakash, Guthrey, Harvey L., Abdulagatov, Aziz I., Ndione, Paul F., Berry, Joseph J., Ginley, David S., George, Steven M., Parilla, Philip A., O'Hayre, Ryan P.

    Published in Advanced materials (Weinheim) (06-03-2013)
    “…A systematic study of the role of the insulator layer on rectification performance in metal–insulator–metal structures is reported. Four different MIM systems…”
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    Journal Article
  15. 15

    Understanding SiO x Layer Breakup in poly-Si/SiO x Passivating Contacts for Si Solar Cells Using Precisely Engineered Surface Textures by Anderson, C. L., Guthrey, H. L., Kale, A. S., Nemeth, W., Page, M., Young, D. L., Stradins, P., Agarwal, S.

    Published in ACS applied energy materials (28-03-2022)
    “…The contact resistivity of polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts depends on the formation of pinholes in SiO x for…”
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    Journal Article
  16. 16

    Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch by Schulte, K.L., France, R.M., McMahon, W.E., Norman, A.G., Guthrey, H.L., Geisz, J.F.

    Published in Journal of crystal growth (15-04-2017)
    “…In this work we develop control over dislocation glide dynamics in GaxIn1−xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on…”
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    Journal Article
  17. 17

    Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl{sub 2} by Jensen, S. A., Burst, J. M., Duenow, J. N., Guthrey, H. L., Moseley, J., Moutinho, H. R., Johnston, S. W., Kanevce, A., Al-Jassim, M. M., Metzger, W. K.

    Published in Applied physics letters (27-06-2016)
    “…For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as…”
    Get full text
    Journal Article
  18. 18

    Correlating Multicrystalline Silicon Defect Types Using Photoluminescence, Defect-band Emission, and Lock-in Thermography Imaging Techniques by Johnston, Steve, Guthrey, Harvey, Fei Yan, Zaunbrecher, Katherine, Al-Jassim, Mowafak, Rakotoniaina, Pati, Kaes, Martin

    Published in IEEE journal of photovoltaics (01-01-2014)
    “…A set of neighboring multicrystalline silicon wafers has been processed through different steps of solar cell manufacturing and then images were collected for…”
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    Journal Article
  19. 19

    Cathodoluminescence Analysis of Grain Boundaries and Grain Interiors in Thin-Film CdTe by Moseley, John, Al-Jassim, Mowafak M., Kuciauskas, Darius, Moutinho, Helio R., Paudel, Naba, Guthrey, Harvey L., Yanfa Yan, Metzger, Wyatt K., Ahrenkiel, Richard K.

    Published in IEEE journal of photovoltaics (01-11-2014)
    “…We used low-temperature cathodoluminescence (CL) spectrum imaging (CLSI) with nanoscale spatial resolution to examine charge-carrier recombination and defects…”
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    Journal Article
  20. 20

    Dislocation-limited open circuit voltage in film crystal silicon solar cells by Alberi, Kirstin, Branz, Howard M., Guthrey, Harvey, Romero, Manuel J., Martin, Ina T., Teplin, Charles W., Stradins, Paul, Young, David L.

    Published in Applied physics letters (17-09-2012)
    “…Carrier recombination at dislocations is a major source of efficiency loss in epitaxial film Si solar cells and significantly affects the open circuit voltage,…”
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    Journal Article