Search Results - "Guthrey, H."
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1
Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2
Published in Applied physics letters (27-06-2016)“…For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as…”
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Journal Article -
2
Critical thickness of atomically ordered III-V alloys
Published in Applied physics letters (12-10-2015)“…The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic…”
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Journal Article -
3
Explanation of red spectral shifts at CdTe grain boundaries
Published in Applied physics letters (02-12-2013)“…We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation…”
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4
Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells Through Nanometer-Scale Potential Imaging
Published in 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC) (11-06-2023)“…Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using…”
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Conference Proceeding -
5
Luminescence from poly-Si films and its application to study passivating-contact solar cells
Published in 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) (01-06-2019)“…In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community…”
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Conference Proceeding -
6
Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics
Published in Solar energy materials and solar cells (01-08-2011)“…Using upgraded metallurgical-grade silicon (UMG-Si) is a cost-effective and energy-efficient approach for the production of solar cells. Grain boundaries (GBs)…”
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Journal Article Conference Proceeding -
7
Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells
Published in Applied physics letters (25-02-2019)“…We report on the microscopic structure of the SiOx layer and the transport mechanism in polycrystalline Si (poly-Si) passivated contacts, which enable…”
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Journal Article -
8
Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports
Published in Journal of power sources (03-11-2020)“…We report on degradation mechanisms of solid-state electrolyte (SSE) based on insights from nm-scale ionic conduction and electronic leakage for solid-state…”
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9
Toward film-silicon solar cells on display glass
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…We describe recent progress in developing epitaxial film crystal silicon (c-Si) solar cells that can be grown at low temperature (<;760 °C) on seed-on-glass…”
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Conference Proceeding -
10
Local electrical degradations of solid-state electrolyte by nm-scale operando imaging of ionic and electronic transports
Published in Journal of power sources (01-01-2021)“…We report on degradation mechanisms of solid-state electrolyte (SSE) based on insights from nm-scale ionic conduction and electronic leakage for solid-state…”
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Journal Article -
11
Critical thickness of atomically ordered III-V alloys
Published in Applied physics letters (12-10-2015)“…The critical thickness model is modified with a general boundary energy that describes the change in bulk energy as a dislocation regularly alters the atomic…”
Get full text
Journal Article -
12
Critical thickness of atomically ordered III-V alloys
Published in Applied physics letters (12-10-2015)Get full text
Journal Article -
13
Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells
Published in Materials science in semiconductor processing (01-10-2023)“…State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In…”
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Journal Article -
14
Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance
Published in Advanced materials (Weinheim) (06-03-2013)“…A systematic study of the role of the insulator layer on rectification performance in metal–insulator–metal structures is reported. Four different MIM systems…”
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Journal Article -
15
Understanding SiO x Layer Breakup in poly-Si/SiO x Passivating Contacts for Si Solar Cells Using Precisely Engineered Surface Textures
Published in ACS applied energy materials (28-03-2022)“…The contact resistivity of polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts depends on the formation of pinholes in SiO x for…”
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Journal Article -
16
Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch
Published in Journal of crystal growth (15-04-2017)“…In this work we develop control over dislocation glide dynamics in GaxIn1−xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on…”
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Journal Article -
17
Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl{sub 2}
Published in Applied physics letters (27-06-2016)“…For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as…”
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Journal Article -
18
Correlating Multicrystalline Silicon Defect Types Using Photoluminescence, Defect-band Emission, and Lock-in Thermography Imaging Techniques
Published in IEEE journal of photovoltaics (01-01-2014)“…A set of neighboring multicrystalline silicon wafers has been processed through different steps of solar cell manufacturing and then images were collected for…”
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Journal Article -
19
Cathodoluminescence Analysis of Grain Boundaries and Grain Interiors in Thin-Film CdTe
Published in IEEE journal of photovoltaics (01-11-2014)“…We used low-temperature cathodoluminescence (CL) spectrum imaging (CLSI) with nanoscale spatial resolution to examine charge-carrier recombination and defects…”
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Journal Article -
20
Dislocation-limited open circuit voltage in film crystal silicon solar cells
Published in Applied physics letters (17-09-2012)“…Carrier recombination at dislocations is a major source of efficiency loss in epitaxial film Si solar cells and significantly affects the open circuit voltage,…”
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Journal Article