Search Results - "Gutakovskiy, A. K."

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy by Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Yu, Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., Preobrazhenskiy, V. V.

“…The  possibility  of forming a strained pseudomorphous quantum well (QW) consisting of a In x Ga 1 – x As y P 1 – y quaternary alloy upon the deposition of…”
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Hafnia and alumina stacks as UTBOXs in silicon-on insulator by Popov, V.P., Antonov, V.A., Gutakovskiy, A.K., Tyschenko, I.E., Vdovin, V.I., Miakonkikh, A.V., Rudenko, K.V.

“…•In SOI pseudo-MOSFETs with 20 nm hafnia alumina interlayers show normal gate-drain characteristics after an RTA ≥ 950 °C with the charge-carrier mobilities…”
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