Search Results - "Gustat, H."

An integrated CMOS RF synthesizer for 802.11a wireless LAN by Herzel, F., Fischer, G., Gustat, H.

“…A frequency synthesizer combining a relatively large tuning range (4.12-4.72 GHz) with a low noise sensitivity is presented. A stable fine-tuning loop is…”
Get full text

Integrated FSK demodulator with very high sensitivity by Gustat, H., Herzel, F.

“…This paper presents a fully integrated highly sensitive frequency-shift keying (FSK) demodulator functioning at a modulation factor of 0.5%-0.1% and below. A…”
Get full text

Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation by Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

“…We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event…”
Get full text

The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology by Diestelhorst, R.M., Finn, S., Bongim Jun, Sutton, A.K., Peng Cheng, Marshall, P.W., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

“…We investigate the effects of both X-ray and proton irradiation on a novel 200 GHz/90 GHz (npn/pnp) complementary SiGe:C HBT technology. The DC forward mode…”
Get full text

NOR/OR register based ECL circuits for maximum data rate by Gustat, H., Borngraber, J.

“…We present a simple efficient general approach of increasing the clock rate of ECL circuits. The key ECL feature used here is the fact that a single transistor…”
Get full text

An 8-bit, 12 GSample/sec SiGe track-and-hold amplifier by Yuan Lu, Wei-Min Lance Kuo, Xiangtao Li, Krithivasan, R., Cressler, J.D., Borokhovych, Y., Gustat, H., Tillack, B., Heinemann, B.

“…We present the design and implementation of an ultra-high-speed SiGe BiCMOS track-and-hold amplifier (THA) for use in high-speed analog-to-digital converters…”
Get full text

RF Bandpass Delta-Sigma Modulators for highly-efficient Class-S transmitters in SiGe BiCMOS technology by Scheytt, J C, Ostrovskyy, P, Gustat, H

“…In this paper an overview of different RF BDSMs at 450 MHz, 900 MHz, and 2.14 GHz is presented. The BDSMs were specifically designed for use in Class-S…”
Get full text

A 10 VPP SiGe voltage driver by Ostrovskyy, P, Gustat, H, Scheytt, Ch, Stikanov, V

“…This paper presents the design and implementation of the high output swing voltage driver. Designed and fabricated in 0.25 um SiGe BiCMOS technology the driver…”
Get full text

A 5-Gb/s 2.1-2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier by Ostrovskyy, P., Gustat, H., Ortmanns, M., Scheytt, J. C.

“…A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes…”
Get full text

General Time-Domain Representation of Chromatic Dispersion in Single-Mode Fibers by Khafaji, M., Gustat, H., Ellinger, F., Scheytt, C.

“…In this letter, an analytical method in time domain for calculation of the effect of chromatic dispersion (CD) in a single-mode fiber is presented. By using…”
Get full text

A SiGe H-bridge switching amplifier for class-S amplifiers with clock frequencies up to 6 GHz by Heck, S, Bräckle, A, Schmidt, M, Schuller, F, Grözing, M, Berroth, M, Gustat, H, Scheytt, J-C

“…This paper describes the design of the first voltage-mode switching amplifier in a fast complementary SiGe-technology in the GHz-range. The amplifier is…”
Get full text

A 6-bit Fully Binary Digital-to-Analog Converter in 0.25- \mu} SiGe BiCMOS for Optical Communications by Khafaji, M., Gustat, H., Sedighi, B., Ellinger, F., Scheytt, J. C.

“…This paper presents an approach to implement a high-speed binary weighted digital-to-analog converter (DAC). A different current switching mechanism is…”
Get full text

A DC–10 GHz amplifier with digital offset correction by Gustat, Hans

“…This work presents a SiGe:C wideband amplifier with a binary CMOS counter for digital offset adjustment. The application of the “radix<2” approach to accurate…”
Get full text

A 6 bit linear binary RF DAC in 0.25µm SiGe BiCMOS for communication systems by Khafaji, M., Gustat, H., Scheytt, J.

“…This paper presents a circuit technique to improve the frequency domain behavior of the binary weighted digital to analog convertors (DAC). It is shown that by…”
Get full text

A 9 GS/s 2.1..2.2 GHz bandpass delta-sigma modulator for Class-S power amplifier by Ostrovskyy, P., Gustat, H., Scheytt, C., Manoli, Y.

“…A tunable fourth-order bandpass delta-sigma modulator (BDSM) designed and fabricated in 0.25 mum SiGe BiCMOS technology is presented. The input band can be…”
Get full text

An integrated CMOS PLL for low-jitter applications by Herzel, F., Fischer, G., Gustat, H., Weger, P.

“…This brief presents a fully integrated integer-N frequency synthesizer with a frequency-tuning range from 2.4 to 2.9 GHz and root-mean-square (rms) jitter…”
Get full text

An 8 Bit 10 GS/s 2Vpp Track and Hold Amplifier in SiGe BiCMOS Technology by Halder, S., Gustat, H., Scheytt, C.

“…This paper presents a track and hold amplifier (THA) in 0.25 mum BiCMOS technology. By using a cascode amplifier as input stage, we enhance the linearity of…”
Get full text

A Low-Power, -Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications by Lance Kuo, Wei-Min, Krithivasan, R, Li, Xiangtao, Lu, Yuan, Cressler, J D, Gustat, H, Heinemann, B

“…A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the…”
Get full text

Differential ECL/CML Synthesis for SiGe BiCMOS by Gustat, H., Jagdhold, U., Winkler, F., Appel, M., Kell, G.

“…A novel SiGe ECL/CML design flow is presented for the first time. It provides CMOS-style synthesis with differential SiGe BiCMOS ECL standard cells. A first…”
Get full text

A fully integrated low-power low-jitter clock synthesizer with 1.2 GHz tuning range in SiGe:C BiCMOS by Gustat, Hans, Herzel, Frank, Shevchenko, Igor

“…We present an integrated clock synthesizer in SiGe:C BiCMOS technology. The synthesizer is aimed at low-jitter applications requiring a wide continuous…”
Get full text