Search Results - "Gusev, P. E."

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues by Gusev, E.P, Cartier, E, Buchanan, D.A, Gribelyuk, M, Copel, M, Okorn-Schmidt, H, D’Emic, C

“…An overview of our recent work on ultrathin (<100 Å) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented…”
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Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications by Gusev, E.P., Cabral, C., Copel, M., D’Emic, C., Gribelyuk, M.

“…We report on growth behavior, structure, thermal stability and electrical properties of ultrathin ( < 10 nm) hafnium oxide films deposited by atomic layer…”
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High-resolution depth profiling in ultrathin Al2O3 films on Si by Gusev, E. P., Copel, M., Cartier, E., Baumvol, I. J. R., Krug, C., Gribelyuk, M. A.

“…A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and…”
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Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) by Gusev, E. P., Shang, H., Copel, M., Gribelyuk, M., D’Emic, C., Kozlowski, P., Zabel, T.

“…We report on physical and electrical characterization of ultrathin (3–10nm) high-κHfO2 gate stacks deposited on Ge(100) by atomic-layer deposition. It is…”
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Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study by Sayan, S., Bartynski, R. A., Zhao, X., Gusev, E. P., Vanderbilt, D., Croft, M., Banaszak Holl, M., Garfunkel, E.

“…The densities of states above and below the Fermi energy for the ZrO2/SiOxNy/n‐Si system are examined by photoemission and inverse photoemission and compared…”
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Bias-temperature instabilities and radiation effects in MOS devices by Zhou, X.J., Fleetwood, D.M., Felix, J.A., Gusev, E.P., D'Emic, C.

“…We report the combined effects of irradiation and bias temperature stress (BTS) on MOS capacitors with HfO/sub 2/ dielectrics. Irradiation is found to enhance…”
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Robustness of ultrathin aluminum oxide dielectrics on Si(001) by Copel, M., Cartier, E., Gusev, E. P., Guha, S., Bojarczuk, N., Poppeller, M.

“…The stability of Al2O3 films during thermal processing will help determine their usefulness as an alternative gate dielectric for advanced complementary…”
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Intermixing at the tantalum oxide/silicon interface in gate dielectric structures by Alers, G. B., Werder, D. J., Chabal, Y., Lu, H. C., Gusev, E. P., Garfunkel, E., Gustafsson, T., Urdahl, R. S.

“…Metal oxides with high dielectric constants have the potential to extend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide…”
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Device physics of capacitive MEMS by Felnhofer, D., Khazeni, K., Mignard, M., Tung, Y.J., Webster, J.R., Chui, C., Gusev, E.P.

“…Using interferometric modulator (IMOD) MEMS-based technology as a typical example, we give an overview of key device concepts of capacitive…”
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High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation by Guha, S., Gusev, E. P., Okorn-Schmidt, H., Copel, M., Ragnarsson, L.-Å, Bojarczuk, N. A., Ronsheim, P.

“…We have examined the stability of Al2O3/Si heterostructures and show that significant Al diffusion occurs into the silicon for temperatures of 1000 °C and…”
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CaF2:Yb laser ceramics by Akchurin, M.Sh, Basiev, T.T., Demidenko, A.A., Doroshenko, M.E., Fedorov, P.P., Garibin, E.A., Gusev, P.E., Kuznetsov, S.V., Krutov, M.A., Mironov, I.A., Osiko, V.V., Popov, P.A.

“…[Display omitted] ► Hot-pressing technique produced CaF2:Yb ceramics with superior mechanical properties. ► For the first time, lasing has been observed for…”
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Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission by Felnhofer, D., Gusev, E.P., Jamison, P., Buchanan, D.A.

“…The focus of this paper is charge trapping within HfO2 high-κ metal-oxide-semiconductor capacitors. Charge was injected by constant voltage stress and internal…”
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Charge trapping and detrapping in HfO2 high-κ gate stacks by Gusev, E.P, D'Emic, C, Zafar, S, Kumar, A

“…We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with ultrathin HfO2 high-kappa gate dielectrics…”
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Measurement of barrier heights in high permittivity gate dielectric films by Zafar, S., Cartier, E., Gusev, E. P.

“…Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal–oxide–semiconductor structures is illustrated…”
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High resolution ion scattering study of silicon oxynitridation by Lu, H. C., Gusev, E. P., Gustafsson, T., Garfunkel, E., Green, M. L., Brasen, D., Feldman, L. C.

“…High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show…”
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Charge detrapping in HfO2 high-κ gate dielectric stacks by Gusev, E. P., D’Emic, C. P.

“…We investigated the kinetics of charge detrapping in high-κ gate stacks fabricated with ultrathin HfO2 dielectric films grown by atomic layer deposition and a…”
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Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering by Gusev, EP, Lu, HC, Gustafsson, T, Garfunkel, E

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Microstructure and scintillation characteristics of BaF2 ceramics by Fedorov, P. P., Kuznetsov, S. V., Smirnov, A. N., Garibin, E. A., Gusev, P. E., Krutov, M. A., Chernenko, K. A., Khanin, V. M.

“…This paper examines how the transformation of BaF 2 from a single-crystalline to polycrystalline state as a result of uniaxial hot-forming influences its…”
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Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation by FELIX, J. A, XIONG, H. D, FLEETWOOD, D. M, GUSEV, E. P, SCHRIMPF, R. D, STERNBERG, A. L, D'EMIC, C

“…The interface properties of Al2O3/SiOxNy/Si(100) nMOSFETs are examined using sub-threshold current-voltage, variable base charge pumping, and low frequency…”
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Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon by Sayan, S., Nguyen, N. V., Ehrstein, J., Emge, T., Garfunkel, E., Croft, M., Zhao, Xinyuan, Vanderbilt, David, Levin, I., Gusev, E. P., Kim, Hyoungsub, McIntyre, P. J.

“…As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect transistor production, an atomic level understanding of their…”
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