Search Results - "Gusev, O. B."

Sensitization of Er luminescence by Si nanoclusters by WOJDAK, M, KLIK, M, FORCALES, M, GUSEV, O. B, GREGORKIEWICZ, T, PACIFICI, D, FRANZO, G, PRIOLO, F, IACONA, F

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Si and Ge nanocrystals in resonator multilayer structures by Grachev, D. A., Ershov, A. V., Belolipetsky, A. V., Krasilnikova, L. V., Yablonskiy, A. N., Andreev, B. A., Gusev, O. B.

“…We have produced optical planar resonators with an oxide layer (SiO2, Al2O3, ZrO2, HfO2) containing Ge or Si nanocrystals as an active medium, which was placed…”
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Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence by Andreev, B. A., Yablonskiy, A. N., Krasilnik, Z. F., Ershov, A. V., Grachev, D. A., Gert, A. V., Gusev, O. B., Yassievich, I. N.

“…The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer…”
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Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon by Bresler, M. S., Gusev, O. B., Kudoyarova, V. Kh, Kuznetsov, A. N., Pak, P. E., Terukov, E. I., Yassievich, I. N., Zakharchenya, B. P., Fuhs, W., Sturm, A.

“…A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown…”
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Iron disilicide formed in a-Si〈Fe〉 thin films by magnetron co-sputtering by Kudoyarova, V.Kh, Terukov, E.I, Kon’kov, O.I, Gusev, O.B, Davydov, V.Yu, Mosina, G.N

“…The formation of β-FeSi2 precipitates was observed for the first time in microcrystalline Si films. The Fe-doped amorphous Si films (a-Si:Fe) were obtained…”
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Self-assembling of supramolecular erbium–oxygen clusters in magnetron plasma, and the optimization of erbium luminescence in a-SiOx:H〈Er,O〉 films by Bresler, M.S., Gusev, O.B., Kudoyarova, V.Kh, Terukov, E.I., Undalov, Yu.K.

“…Films of erbium-doped amorphous hydrogenated silicon a-SiOx:H〈Er,O〉 were fabricated by dc-magnetron sputtering at different concentrations of oxygen in the…”
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Modification of erbium photoluminescence excitation spectra for the emission wavelength 1.54 μm in mesoscopic structures by Gaponenko, N.V., Unuchak, D.M., Mudryi, A.V., Malyarevich, G.K., Gusev, O.B., Stepikhova, M.V., Krasilnikova, L.V., Stupak, A.P., Kleshcheva, S.M., Samoilovich, M.I., Tsvetkov, M.Yu

“…Photoluminescence excitation (PLE) spectra for the emission wavelength 1.54 μm were studied for erbium-doped xerogels embedded in artificial opals and porous…”
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Optical properties of erbium-doped xerogels embedded in porous anodic alumina by Gaponenko, N.V., Malyarevich, G.K., Tsyrkunou, D.A., Stepanova, E.A., Mudryi, A.V., Gusev, O.B., Terukov, E.I., Stepikhova, M.V., Krasilnikova, L.V., Drozdov, Yu.N.

“…Structures comprising erbium-doped titanium oxide xerogel/porous anodic alumina show strong photoluminescence at 1.54 μm originating from 4I 13/2 → 4I 15/2…”
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Electroluminescence from amorphous–crystalline silicon heterostructures by Bresler, M.S., Gusev, O.B., Terukov, E.I., Fuhs, W., Froitzheim, A., Gudovskikh, A.S., Kleider, J.P., Weiser, G.

“…The light emission from heterostructures of hydrogenated amorphous silicon and monocrystalline silicon of the type a-Si:H(n +)/c-Si(p) under forward bias has…”
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Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures by Bresler, M. S., Gusev, O. B., Pak, P. E., Yassievich, I. N.

“…In p–n junctions based on c-Si:Er, we have observed strongly efficient excitation of erbium electroluminescence at 1.54 μm. Excitation of erbium ions is…”
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Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature by Sobolev, N. A., Gusev, O. B., Shek, E. I., Vdovin, V. I., Yugova, T. G., Emel’yanov, A. M.

“…The behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1 MeV energy and 1×1013 cm−2…”
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Electroluminescence efficiency of silicon diodes by Bresler, M. S., Gusev, O. B., Zakharchenya, B. P., Yassievich, I. N.

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Light emission from silicon nanocrystals by Gusev, O. B., Poddubny, A. N., Prokofiev, A. A., Yassievich, I. N.

“…The main experimental results of studies of the photoluminescence of silicon nanocrystals and theoretical methods developed for the description of optical…”
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Edge electroluminescence of silicon: An amorphous-silicon-crystalline-silicon heterostructure by Bresler, M. S., Gusev, O. B., Terukov, E. I., Froitzheim, A., Fuhs, W.

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Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon by Gusev, O. B., Kuznetsov, A. N., Terukov, E. I., Bresler, M. S., Kh. Kudoyarova, V., Yassievich, I. N., Zakharchenya, B. P., Fuhs, W.

“…We have observed strong room-temperature electroluminescence at 1.54 μm induced by erbium ions in amorphous hydrogenated silicon (a-Si:H). The device consisted…”
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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sub x}:H (0 < x < 2) with time-modulated dc magnetron plasma by Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Trapeznikova, I. N.

“…Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge…”
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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma by Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Trapeznikova, I. N.

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The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering by Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Kudoyarova, V. Kh

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A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering by Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Kudoyarova, V. Kh

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On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma by Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Trapeznikova, I. N.

“…Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge…”
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