Search Results - "Gusev, E.P"

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications by Gusev, E.P., Cabral, C., Copel, M., D’Emic, C., Gribelyuk, M.

“…We report on growth behavior, structure, thermal stability and electrical properties of ultrathin ( < 10 nm) hafnium oxide films deposited by atomic layer…”
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Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics by Min Yang, Gusev, E.P., Meikei Ieong, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.

“…Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness…”
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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues by Gusev, E.P, Cartier, E, Buchanan, D.A, Gribelyuk, M, Copel, M, Okorn-Schmidt, H, D’Emic, C

“…An overview of our recent work on ultrathin (<100 Å) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented…”
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Bias-temperature instabilities and radiation effects in MOS devices by Zhou, X.J., Fleetwood, D.M., Felix, J.A., Gusev, E.P., D'Emic, C.

“…We report the combined effects of irradiation and bias temperature stress (BTS) on MOS capacitors with HfO/sub 2/ dielectrics. Irradiation is found to enhance…”
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Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO/sub 2//metal stacks by Narayanan, V., Maitra, K., Linder, B.P., Paruchuri, V.K., Gusev, E.P., Jamison, P., Frank, M.M., Steen, M.L., La Tulipe, D., Arnold, J., Carruthers, R., Lacey, D.L., Cartier, E.

“…The performance of aggressively scaled (1.4nm<T/sub inv/<2.1nm) self-aligned HfO/sub 2/-based nMOSFETs with various metal gate electrodes (W, TaN, TiN, and…”
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Ultrathin high-K gate stacks for advanced CMOS devices by Gusev, E.P., Buchanan, D.A., Cartier, E., Kumar, A., DiMaria, D., Guha, S., Callegari, A., Zafar, S., Jamison, P.C., Neumayer, D.A., Copel, M., Gribelyuk, M.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., Chan, K., Bojarczuk, N., Ragnarsson, L.-A., Ronsheim, P., Rim, K., Fleming, R.J., Mocuta, A., Ajmera, A.

“…Reviews recent progress in and outlines the issues for high-K high-temperature (/spl sim/1000/spl deg/C) poly-Si CMOS processes and devices and also…”
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The initial oxidation of silicon: new ion scattering results in the ultra-thin regime by Gusev, E.P., Lu, H.C., Gustafsson, T., Garfunkel, E.

“…We present new results on the SiO 2 Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the…”
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Ultrathin nitrided gate dielectrics by plasma-assisted processing by Gusev, E.P., Buchanan, D.A., Jamison, P., Zabel, T.H., Copel, M.

“…Ultrathin (<3nm) gate dielectrics made by plasma nitridation of SiO 2 films have been studied by a combination of physical (ellipsometry, Nuclear Reaction…”
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Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics by Felix, J.A, Schwank, J.R, Fleetwood, D.M, Shaneyfelt, M.R, Gusev, E.P

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Interfacial microstructure of NiSi x /HfO 2/SiO x /Si gate stacks by Gribelyuk, M.A., Cabral, C., Gusev, E.P., Narayanan, V.

“…Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide-…”
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Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks by Felix, J.A, Shaneyfelt, M.R, Fleetwood, D.M, Meisenheimer, T.L, Schwank, J.R, Schrimpf, R.D, Dodd, P.E, Gusev, E.P, D'Emic, C

“…We examine the total-dose radiation response of capacitors and transistors with stacked Al{sub 2}O{sub 3} on oxynitride gate dielectrics with Al and poly-Si…”
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Device physics of capacitive MEMS by Felnhofer, D., Khazeni, K., Mignard, M., Tung, Y.J., Webster, J.R., Chui, C., Gusev, E.P.

“…Using interferometric modulator (IMOD) MEMS-based technology as a typical example, we give an overview of key device concepts of capacitive…”
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Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks by GRIBELYUK, M. A, CABRAL, C, GUSEV, E. P, NARAYANAN, V

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Charge trapping and detrapping in HfO2 high-κ gate stacks by Gusev, E.P, D'Emic, C, Zafar, S, Kumar, A

“…We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with ultrathin HfO2 high-kappa gate dielectrics…”
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Charge trapping and detrapping in HfO 2 high- κ gate stacks by Gusev, E.P, D'Emic, C, Zafar, S, Kumar, A

“…We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with ultrathin HfO 2 high- κ gate dielectrics deposited…”
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Review of Device and Reliability Physics of Dielectrics in Electrostatically Driven MEMS Devices by de Groot, W.A., Webster, J.R., Felnhofer, D., Gusev, E.P.

“…After decades of improving semiconductor-device reliability, dielectric failure rates resulting from surface-charge accumulation, dielectric breakdown, and…”
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Thermal ammonia nitridation on HfO2 and hafnium silicates thin films by Ganem, J.-J., Trimaille, I., Vickridge, I.C., Gusev, E.P.

“…In this paper we use isotopic tracing experiments with 15NH3 and 14NH3 to investigate the nitridation mechanisms on both hafnium silicates films (40–175Å) and…”
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Charge trapping and annealing in high-/spl kappa/ gate dielectrics by Felix, J.A., Shaneyfelt, M.R., Fleetwood, D.M., Schwank, J.R., Dodd, P.E., Gusev, E.P., Fleming, R.M., D'Emic, C.

“…We examine the radiation response, annealing characteristics, and long-term reliability of capacitors with Al gates and Al/sub 2/O/sub 3/-SiO/sub x/N/sub y/…”
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Charge trapping and annealing in high-[kappa] gate dielectrics by Felix, J.A, Shaneyfelt, M.R, Fleetwood, D.M, Schwank, J.R, Dodd, P.E, Gusev, E.P, Fleming, R.M, D'Emic, C

“…By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge…”
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Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO/sub 2/ gate dielectricon ultrathin SiON buffer layer by Han, J.-P., Vogel, E.M., Gusev, E.P., D'Emic, C., Richter, C.A., Heh, D.W., Suehle, J.S.

“…The variable rise and fall time charge-pumping technique has been used to determine the energy distribution of interface trap density (D/sub it/) in MOSFETs…”
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