Search Results - "Guofu Niu"

A CCCS-Based Approach to Modeling of Thermal Coupling by Li, Yiao, Niu, Guofu

“…A new approach to modeling of thermal coupling based on current-controlled current sources is developed. The approach is compatible with existing compact…”
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Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications by Jia, Xiaojia, Niu, Guofu

“…This paper presents analytical models of SiGe HBT and low-noise amplifier (LNA) noise parameters accounting for high-frequency noise correlation. The models…”
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Effect of Boundary Conditions on Thermal Noise of Intrinsic Terminal Currents in Bipolar Transistors Pertinent to Quasi-Ballistic Transport by Xia, Kejun, Niu, Guofu

“…This paper examines the impact of quasi-ballistic transport (QBT) on bipolar transistor (BJT) intrinsic terminal current noise by analytically solving the…”
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A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration by Xiaoyun Wei, Guofu Niu, Sweeney, S., Qingqing Liang, Xudong Wang, Taylor, S.

“…This paper presents a general 4-port algorithm that can remove on-wafer parasitics from on-wafer measurements after impedance standard substrate (ISS)…”
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A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling by Xia, Kejun, Niu, Guofu, Xu, Ziyan

“…A new approach to implementing correlated high-frequency noise in bipolar junction transistor (BJT) large-signal compact models is developed by placing an RC…”
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An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs by Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

“…We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the inclusion of an alternate…”
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Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K by Lan Luo, Guofu Niu, Moen, K.A., Cressler, J.D.

“…In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors…”
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Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling by Xia, Kejun, Niu, Guofu

“…This paper models the input non-quasi-static (NQS) effect of bipolar transistors using charge partitioning. The input NQS effect associated with the base…”
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Discussions and extension of van Vliet’s noise model for high speed bipolar transistors by Xia, Kejun, Niu, Guofu

“…The general van Vliet noise model for transistors was derived for base minority carriers only under adiabatic boundary conditions. This paper extends the model…”
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Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs by Appaswamy, A., Bellini, M., Wei-Min Lance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, J.D., Guofu Niu, Joseph, A.J.

“…The inverse-mode operational regime of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) has to date been largely ignored and is typically…”
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Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit by Kejun Xia, Guofu Niu, Sheridan, D.C., Sweeney, S.L.

“…This paper presents modeling of correlated RF noise in the intrinsic base and collector currents of SiGe heterojunction bipolar transistors using quasi-static…”
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An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures by Yuan, Jiahui, Cressler, John D., Zhu, Chendong, Cui, Yan, Niu, Guofu, Liang, Qingqing, Joseph, Alvin J.

“…In this paper, a new negative-differential-resistance (NDR) effect and a novel collector-current kink effect are investigated in the cryogenically operated…”
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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs by Guofu Niu, Jin Tang, Zhiming Feng, Joseph, A.J., Harame, D.L.

“…This paper examines the impact of SiGe HBT scaling on 1/f noise and phase noise of oscillators and frequency synthesizers. The increase of transistor speed…”
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Modeling of anomalous frequency and bias dependences of effective gate resistance in RF CMOS by Cui, Y., Guofu Niu, Taylor, S.S.

“…This paper explains the frequency and bias dependences of the effective gate resistance (real part of h 11 ) by considering the effect of the gate-to-body…”
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Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs by Turowski, W, Pellish, J A, Moen, K A, Raman, A, Cressler, J D, Reed, R A, Guofu Niu

“…Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement…”
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Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) by Marshall, P., Carts, M., Currie, S., Reed, R., Randall, B., Fritz, K., Kennedy, K., Berg, M., Krithivasan, R., Siedleck, C., Ladbury, R., Marshall, C., Cressler, J., Guofu Niu, LaBel, K., Gilbert, B.

“…SEE testing at multi-Gbit/s data rates has traditionally involved elaborate high speed test equipment setups for at-speed testing. We demonstrate a generally…”
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Modeling and Characterization of Intermodulation Linearity on a 90-nm RF CMOS Technology by Xiaoyun Wei, Guofu Niu, Ying Li, Ming-Ta Yang, Taylor, S.S.

“…This paper presents measured, simulated and calculated third-order intercept point (IP3) on a 90-nm RF CMOS technology. The IP3 sweet spot is actually at a V…”
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A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs by Qingqing Liang, Cressler, J.D., Guofu Niu, Yuan Lu, Freeman, G., Ahlgren, D.C., Malladi, R.M., Newton, K., Harame, D.L.

“…A new four-port scattering parameter (S-parameter) and broad-band noise deembedding methodology is presented. This deembedding technique considers distributed…”
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Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures by Ziyan Xu, Guofu Niu, Lan Luo, Cressler, John D, Alles, Michael L, Reed, Robert, Mantooth, H Alan, Holmes, James, Marshall, Paul W

“…This paper investigates cryogenic temperature charge collection and single-event upset (SEU) in SiGe HBT devices and logic circuits using 3-D device simulation…”
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Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model by Qingqing Liang, Andrews, J.M., Cressler, J.D., Guofu Niu

“…A frequency-domain lumped-nonlinear-source behavioral model is presented. This generalized two-port nonlinear model is used to characterize the linearity of…”
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