Search Results - "Guo, B.N."

Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization by Wen, T.Y., Colombeau, B., Li, C.l., Liu, S.Y., Guo, B.N., Meer, H.V., Hou, M., Yang, B., Feng, H.C., Hsu, C.F., Huang, C.C., Tasi, Y.T., Chen, H.P., Huang, S.A., Huang, C.W., Chen, C.H., Lin, J.C., Shim, K.H., Kuo, J., Lee, S., Holcman, L., Nafisr, K., Fernandez, J., Fung, D., Yang, N.H., Wu, J.Y., Hung, G.C.

“…In advanced FinFET devices, STI gap fill and \vert \text{LD}_{0} stress are responsible for fin defects, fin bending as well as device performance degradations…”
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Characterization and simulation studies on high tilt ion implantation for precision halo implant applications by Guo, B.N., Zhao, Z.Y., Falk, S., Liu, J., Shim, K.H., Jeong, U., Mehta, S.

“…Precision dopant placement at high tilt angles for halo applications is required in the fabrication of advanced devices to achieve better transistor…”
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Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon by Duggan, J.L., Naab, F., Hossain, K., Holland, O.W., McDaniel, F.D., Xu, J.J., Zhao, Z.Y., Guo, B.N., Liu, J., Shim, K.H., Jeong, U.

“…The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers…”
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The high-energy heavy ion nuclear microprobe at the University of North Texas by McDaniel, F.D, Duggan, J.L, Yang, C, Guo, B.N, El Bouanani, M, Nigam, M

“…The high-energy, heavy ion, microprobe recently installed at the University of North Texas (UNT) has a demagnification factor of ∼60. It has a probe-forming…”
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FinFET IO Device Performance Gain with Heated Implantation by Wen, T.Y., Li, C.I., Hsieh, M.S., Tsai, S.H., Hsieh, P.K., Lin, S.H., Chiang, H.T., Yang, N.H., Wu, J.Y., Guo, B.N., Colombeau, B., Gossmann, H.-J., Zhang, Y., Meer, H.V., Shim, K.H., Hou, M., Lee, S., Kuo, Jeff, Liao, D.

“…FinFET doping via implantation at room temperature could result in Fin damage within the Fin body and degrade Fin device performance. Heated implantation…”
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Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeams by Guo, B.N., El Bouanani, M., Renfrow, S.N., Nigam, M., Walsh, D.S., Doyle, B.L., Duggan, J.L., McDaniel, F.D.

“…To design more radiation-tolerant integrated circuits (ICs), it is necessary to design and test accurate models of ionizing-radiation-induced charge collection…”
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Ion beam induced charge collection (IBICC) of integrated circuits using a 10 MeV carbon microbeam by McDaniel, F.D, Guo, B.N, Renfrow, S.N, El Bouanani, M, Duggan, J.L, Doyle, B.L, Walsh, D.S, Aton, T.J

“…This paper presents ion beam induced charge collection (IBICC) data that simulates cosmic neutron-induced Si recoil effects in IC test structures. The…”
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TEAMS depth profiles in semiconductors by Datar, S.A., Renfrow, S.N., Guo, B.N., Anthony, J.M., Zhao, Z.Y., McDaniel, F.D.

“…Accelerator Mass Spectrometry (AMS) is routinely used to measure abundance ratios of long-lived radioisotopes such as 14C, 36Cl and 129I to their stable…”
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Experimental and simulation studies of the channeling phenomena for high energy implantation by Guo, B.N., Variam, N., Jeong, U., Mehta, S., Posselt, M., Lebedev, A.

“…As device geometries scale, there is an increasing trend for high energy CMOS well implants to migrate to small incidence angles (near zero degree), and…”
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Seamless transferability of doping processes between the VIISta platform of ion implanters by Variam, N., Mehta, S., Norasetthekul, S., Guo, B.N.

“…The VIISta platform of implanters provides single wafer implantation over the entire energy and dose range for ≤130nm CMOS technology. These implanters feature…”
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Meeting the well doping requirement of sub 100nm devices - process performance characteristics of the VIISta 3000 implanter by Norasetthekul, S., Guo, B.N., Flanagan, J., Variam, N., Mehta, S.

“…As device geometries scale, there is an Increasing requirement for a tight control of all process parameters related to doping. In order to enable the high…”
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Precise beam incidence angle control on the VIISta 810HP by Weeman, J., Olson, J., Guo, B.N., Jeong, U., Li, G.C., Mehta, S.

“…The VIISta 810HP ion implanter has precise control over the angle of incidence of the ion beam to the wafer. The machine is capable of delivering the beam to…”
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