Search Results - "Guo, B. N."

Direct, Inverse, and Equivalence Theorems for Weighted Szász—Durrmeyer—Bézier Operators in Orlicz Spaces by Han, L.-X., Guo, B.-N.

“…We introduce the Orlicz space corresponding to the Young function and, by virtue of the equivalence theorem between the modified K -functional and modulus of…”
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Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing by Li, C I, Shen, T M, Kuo, P, Liu, R, Chan, M, Yang, C L, Wu, J Y, Colombeau, B, Guo, B N, Thanigaivelan, T, Toh, T, Sun, H L, Wu, T, Lu, S

“…In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C 2 B 10 H 12 ) implant on a state-of-the-art 28-nm logic flow are…”
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Mechanical properties of square-steel confined-concrete quantitative pressure-relief arch and its application in a deep mine by Wang, Q., Jiang, B., Shao, X., Wang, F.Q., Li, S.C., Guo, N.B., Wang, B.Q., Xiao, G.Q., Pan, R.

“…Providing support in deep and complex roadways is one of the major challenges in the mining industry; thus, a square-steel confined-concrete (SQCC) support…”
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Experimental studies on the mechanical properties and deformation & failure mechanism of U-type confined concrete arch centering by Wang, Q., Jiang, B., Li, S.C., Wang, D.C., Wang, F.Q., Li, W.T., Ren, Y.X., Guo, N.B., Shao, X.

“…•We propose U-type confined concrete arch centering (UCCAC) support system applicable to deep roadways.•A real scale confined concrete arch centering…”
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p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing by Li, C. I., Breil, N., Wen, T. Y., Liu, S. Y., Hsieh, M. S., Yen, S. J., Chang, C. W., Tsai, S. H., Gossmann, H., Guo, B. N., Shim, K. H., Variam, N., Tang, S., Wang, C., Salimian, S., Nejad, H., Sharma, S., Wen, J., Khaja, F. A., Hollar, K., Ng, B., Nagy, S., Hung, R., Hou, M., Chen, S., Kuo, J., Liao, D., Chudzik, M., Yang, N. H., Hung, G. C., Hsu, S. C., Wu, J. Y.

“…This letter reports a new method using boron plasma doping and nanosecond laser annealing for further improvement of contact engineering. Up to 8% device…”
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REMARKS ON COMPLETE MONOTONICITY OF A FUNCTION INVOLVING THE GAMMA FUNCTION by F. Qi, B. N. Guo

“…In the note, the authors give several remarks on the paper in "Chen and Haigang Zhou On completely monotone of an arbitrary real parameter function involving…”
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Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications by Yang, C. L., Tsai, C. H., Li, C. I., Tzeng, C. Y., Lin, G. P., Chen, W. J., Chin, Y. L., Liao, C. I., Chan, M., Wu, J. Y., Hsieh, E. R., Guo, B. N., Lu, S., Colombeau, B., Chung, S. S., Chen, I. C.

“…In this letter, we have demonstrated that cryogenic implant in the source and drain formation offers advantages for reducing the threshold voltage mismatch in…”
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Mechanical properties of square-steel confined-concrete quantitative pressure-relief arch and its application in a deep mine by Wang, Q., Jiang, B., Shao, X., Wang, F.Q., Li, S.C., Guo, N.B., Wang, B.Q., Xiao, G.Q., Pan, R.

“…Providing support in deep and complex roadways is one of the major challenges in the mining industry; thus, a square-steel confined-concrete (SQCC) support…”
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Characterization and simulation studies on high tilt ion implantation for precision halo implant applications by Guo, B.N., Zhao, Z.Y., Falk, S., Liu, J., Shim, K.H., Jeong, U., Mehta, S.

“…Precision dopant placement at high tilt angles for halo applications is required in the fabrication of advanced devices to achieve better transistor…”
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The loss of boron in ultra-shallow boron implanted Si under heavy ion irradiation by Pelicon, P., El Bouanani, M., Ravi Prasad, G. V., Razpet, A., Simčič, J., Guo, B. N., Birt, D., Duggan, J. L., Mcdaniel, F. D.

“…Heavy ion impact has been known to cause a loss of light elements from the near-surface region of the irradiated sample. One of the possible approaches to a…”
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The high-energy heavy ion nuclear microprobe at the University of North Texas by McDaniel, F.D, Duggan, J.L, Yang, C, Guo, B.N, El Bouanani, M, Nigam, M

“…The high-energy, heavy ion, microprobe recently installed at the University of North Texas (UNT) has a demagnification factor of ∼60. It has a probe-forming…”
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Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeams by Guo, B.N., El Bouanani, M., Renfrow, S.N., Nigam, M., Walsh, D.S., Doyle, B.L., Duggan, J.L., McDaniel, F.D.

“…To design more radiation-tolerant integrated circuits (ICs), it is necessary to design and test accurate models of ionizing-radiation-induced charge collection…”
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Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry by McDaniel, F. D., Datar, S. A., Guo, B. N., Renfrow, S. N., Zhao, Z. Y., Anthony, J. M.

“…Accelerator mass spectrometry (AMS) is now widely used in over 30 laboratories throughout the world to measure ratios of the abundances of long-lived…”
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Fin Bending Mitigation and Local Layout Effect Alleviation in Advanced FinFET Technology through Material Engineering and Metrology Optimization by Wen, T.Y., Colombeau, B., Li, C.l., Liu, S.Y., Guo, B.N., Meer, H.V., Hou, M., Yang, B., Feng, H.C., Hsu, C.F., Huang, C.C., Tasi, Y.T., Chen, H.P., Huang, S.A., Huang, C.W., Chen, C.H., Lin, J.C., Shim, K.H., Kuo, J., Lee, S., Holcman, L., Nafisr, K., Fernandez, J., Fung, D., Yang, N.H., Wu, J.Y., Hung, G.C.

“…In advanced FinFET devices, STI gap fill and \vert \text{LD}_{0} stress are responsible for fin defects, fin bending as well as device performance degradations…”
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A class of logarithmically completely monotonic functions and the best bounds in the second Kershaw's double inequality by Qi, Feng, Guo, Bai-Ni

“…In the article, the sufficient and necessary conditions such that a class of functions which involve the psi function ψ and the ratio Γ ( x + t ) / Γ ( x + s )…”
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Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER) by Yang, Y. R., Breil, N., Yang, C. Y., Hsieh, J., Chiang, F., Colombeau, B., Guo, B. N., Shim, K. H., Variam, N., Leung, G., Hebb, J., Sharma, S., Ni, C. N., Ren, J., Wen, J., Park, J. H., Chen, H., Chen, S., Hou, M., Tsai, D., Kuo, J., Liao, D., Chudzik, M., Lin, S. H., Huang, H. F., Yang, N. H., Lin, J. F., Tsai, C. T., Hung, G. C., Hsu, S. C., Cheng, O., Wu, J. Y., Yew, T. R.

“…We report significant improvement of the TiSi / p-SiGe contact resistance by using a cryogenic (cold) boron implantation technique inside the contact trench of…”
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A Retrospective Study of Minipercutaneous Laser Lithotripsy for Treatment of Allograft Kidney Lithiasis Obstruction by Ji, Z.G, Tian, Y, Chen, Y.Q, Liu, Z, Lin, J, Wang, J.M, Ma, L.L, Guo, H.B, Tang, Y.W, Xie, Z.L, Sun, W, Zhang, L

“…Abstract Objective To evaluate the safety and effectiveness of invasive percutaneous laser lithotripsy to manage allograft kidney lithiasis obstruction…”
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Ion beam induced charge collection (IBICC) of integrated circuits using a 10 MeV carbon microbeam by McDaniel, F.D, Guo, B.N, Renfrow, S.N, El Bouanani, M, Duggan, J.L, Doyle, B.L, Walsh, D.S, Aton, T.J

“…This paper presents ion beam induced charge collection (IBICC) data that simulates cosmic neutron-induced Si recoil effects in IC test structures. The…”
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TEAMS depth profiles in semiconductors by Datar, S.A., Renfrow, S.N., Guo, B.N., Anthony, J.M., Zhao, Z.Y., McDaniel, F.D.

“…Accelerator Mass Spectrometry (AMS) is routinely used to measure abundance ratios of long-lived radioisotopes such as 14C, 36Cl and 129I to their stable…”
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Geometry-driven photorealistic facial expression synthesis by Zhang, Qingshan, Liu, Zicheng, Quo, Baining, Terzopoulos, Demetri, Shum, Heung-Yeung

“…Expression mapping (also called performance driven animation) has been a popular method for generating facial animations. A shortcoming of this method is that…”
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