Search Results - "Gule, E.G."

Light-emitting properties of BN synthesized by different techniques by Rudko, G.Yu, Sartinska, L.L., Isaieva, O.F., Gule, E.G., Eren, T., Altay, E.

“…Light-emitting properties of boron nitride powders of different morphology grown using various techniques were studied. All samples were hexagonal BN (h-BN),…”
Get full text

Tunable electrophysical properties of composites nano-CdS/polyvinyl alcohol by Rudko, G.Yu, Kovalchuk, A.O., Bondarenko, V.A., Fediv, V.I., Gule, E.G.

“…Electrical d.c. conductivity of nano-CdS/polyvinyl alcohol composites with different nanoparticle concentrations and its temperature dependence were studied…”
Get full text

Effect of erbium fluoride doping on the photoluminescence of Si[O.sub.x] films by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Strelchuk, V.V, Oleksenko, P.F, Veligura, L.I, Nikolenko, A.S, Mukhlyo, M.A

“…The photoluminescence of Si[O.sub.x] films deposited on c-Si wafers by the thermal evaporation of SiO in a vacuum and, for the first time, doped with…”
Get full text

Specific features and nature of the 890 nm photoluminescence band detected in Si[O.sub.x] films after low-temperature annealing by Vlasenko, N.A, Sopinskii, N.V, Gule, E.G, Manoilov, E.G, Oleksenko, P.F, Veligura, L.I, Mukhlyo, M.A

“…A band with a peak at 890 nm is detected in the photoluminescence spectra of Si[O.sub.x] (x ≅ 1.3) films deposited by thermal evaporation of SiO and annealed…”
Get full text

Erratum: "electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films" [semiconductors 45, 587 ] by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

Get full text

Electronic states on silicon surface after deposition and annealing of Si[O.sub.x] films by Vlasenko, N.A, Oleksenko, P.F, Denisova, Z.L, Sopinskii, N.V, Veligura, L.I, Gule, E.G, Litvin, O.S, Mukhlyo, M.A

“…The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine…”
Get full text

Femtosecond pulse generation in quantum GaAs/InGaAs/GaAs heterostructures by Klimovskaya, A.I., Driga, Yu.A., Gule, E.G., Pikaruk, O.O.

“…In the present work we have shown the features of superradiance in quantum heterostructures. Experiments were carried out with GaAs/In 0.16Ga 0.84As/GaAs…”
Get full text

Photoluminescence parameters in strained GaAs/In/sub x/Ga/sub 1-x/As/GaAs-heterostructures by Grigor'ev, N.N., Gule, E.G., Klimovskaya, A.I., Dryga, Yu.A., Litovchenko, V.G.

“…The photoluminescence (PL) of In/sub x/Ga/sub 1-x/As-single quantum wells (QW) grown on GaAs substrate with x ranging between 0.16 and 0.35 was studied. The…”
Get full text