Study of the Oxidation Process of Crystalline Powder of In2S3 and Thin Films Obtained by Dr Blade Method

Study of the Oxidation Process of Crystalline Powder of In2S3 and Thin Films Obtained by Dr Blade Method

Good quality In 2 S 3 films were grown by the Dr Blade method from a powder synthesized in a chemical bath, and oxidized to obtain In 2 O 3 films and films of intermediate composition. The oxidation process and kinetics are studied by means of thermogravimetric analysis, which shows complex phenomen...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 48; no. 7; pp. 4715 - 4725
Main Authors: Hamici, M., Guessoum, Kh, Vaillant, L., Gagou, Y., Saint-Grégoire, P.
Format: Journal Article
Language:English
Published: New York Springer US 01-07-2019
Springer Nature B.V
Institute of Electrical and Electronics Engineers
Subjects:
Characterization and Evaluation of Materials
Chemical synthesis
Chemistry and Materials Science
Crystallography
Direct reduction
Electronics and Microelectronics
Indium oxides
Instrumentation
Materials Science
Optical and Electronic Materials
Organic chemistry
Oxidation
Oxygen atoms
Physics
Reaction kinetics
Scanning electron microscopy
Solid solutions
Solid State Physics
Thermogravimetric analysis
Thin films
X-ray diffraction
S
bandgap
In
semiconductor
thermogravimetry
oxidation
structure
photovoltaics
O
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Summary:Good quality In 2 S 3 films were grown by the Dr Blade method from a powder synthesized in a chemical bath, and oxidized to obtain In 2 O 3 films and films of intermediate composition. The oxidation process and kinetics are studied by means of thermogravimetric analysis, which shows complex phenomena. The study is completed by scanning electron microscopy and energy dispersive x-ray measurements. X-ray diffraction and UV–visible spectroscopy results are also shown. The oxidation process begins significantly above 420°C, and it appears that at least one intermediate crystal phase takes place in the solid solution, suggesting that the replacement of sulfur by oxygen atoms occurs at different temperatures in the different crystallographic sites. The obtained samples show a band gap varying continuously between 1.94 eV and 3.72 eV.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07256-w