Search Results - "Guerrieri, S.D."
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1
Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation
Published in IEEE transactions on microwave theory and techniques (01-09-2007)“…This paper presents an accurate and flexible approach to the self-consistent electrothermal modeling of III-N-based HEMTs, combining a temperature-dependent…”
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Journal Article -
2
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
Published in IEEE transactions on electron devices (01-05-2001)“…The paper presents a novel, unified technique to evaluate, through physics-based modeling, the frequency conversion and noise behavior of semiconductor devices…”
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Journal Article -
3
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications
Published in IEEE transactions on electron devices (01-03-2003)“…The paper presents a review on physics-based noise simulation techniques for RF semiconductor devices, starting with the small-signal case but with greater…”
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4
Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices
Published in IEEE transactions on microwave theory and techniques (01-04-2006)“…We propose a rigorous finite-element-method (FEM) model for traveling-wave structures on doped semiconductor substrates based on a full-wave electromagnetic…”
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5
Noise source modeling for cyclostationary noise analysis in large-signal device operation
Published in IEEE transactions on electron devices (01-09-2002)“…Starting from the analysis of fundamental noise sources in large-signal (LS) periodic operation, a system theory approach is proposed for the modeling of…”
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6
Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection. Part I. Model derivation
Published in IEEE transactions on electron devices (01-03-2004)“…Starting from the well known low-injection approximation, a closed form, analytical compact model is derived for the small-signal (SS) and forced…”
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Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection. Part II. Discussion
Published in IEEE transactions on electron devices (01-03-2004)“…Starting from the compact conversion and cyclostationary p-n diode noise model presented in the companion paper , we present an extensive validation based on…”
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8
Author's reply
Published in IEEE transactions on electron devices (01-10-2003)Get full text
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Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models
Published in IEEE transactions on microwave theory and techniques (01-05-1997)“…The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic…”
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A new analytical model for high frequency MOSFET noise
Published in Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) (2001)“…A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical…”
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Conference Proceeding
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A new dynamic, self-consistent electro-thermal model of power HBTs and a novel interpretation of thermal collapse loci in multi-finger devices
Published in Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) (2001)“…A new self-consistent dynamic electro-thermal model for power HBTs is presented coupling a circuit-oriented electrical model fitted on experimental data with a…”
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Conference Proceeding -
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Advanced Neural Network Techniques for GaN-HEMT Dynamic Behavior Characterization
Published in 2006 European Microwave Integrated Circuits Conference (01-09-2006)“…This paper presents a new approach to build RF dynamic behavioral models, based on time-delay neural networks (TDNNs), suitable for FET devices, and capable to…”
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Conference Proceeding -
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A comprehensive class A to B power and load-pull characterization of GaN HEMTs on SiC and sapphire substrates
Published in European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 (2005)“…An extensive power characterization of devices fabricated on GaN grown on SiC and sapphire substrates has been carried out, including power sweep and load-pull…”
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Conference Proceeding