Search Results - "Guba, K"

Comparison of Approaches to Stratification of Russian Journals: Scientometric Indicators, International Databases, and National Lists by Dyachenko, E. L., Guba, K. S., Potapov, I. V., Mironenko, A. Yu

“…We discuss the approaches to the evaluation of scientists’ performance that prevailed in Russia over the course of the last decade. The article presents…”
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The Role of Scientometric Thresholds for the Evaluation of Grant Applications by Guba, K. S., Zheleznov, A. M., Chechik, E. A.

“…The present study focuses on data from the Russian Science Foundation (RSF). The authors analyze the effect of using quantitative indicators in grant…”
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Atypical liquor-hypotension syndromes by Guba, K, Pancazel, G, Kamondi, A, Papp, A, Rozsa, C, Gacs, G

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Nanostructured ternary compound Hg(Cd)Te-based composite formed by ion bombardment Ag+ for hybrid photonics by Smirnov, O. B., Savkina, R. K., Udovytska, R. S., Guba, S. K., Yuryev, S. O., Malyi, Ye. V.

“…The results of a study of composite structures p -(Ag 2 O-Hg 1− x Cd x Te ( x  ~ 0.223)) based on nanosized silver oxide inclusions in a semiconductor matrix…”
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Oligodipsia and dissociative experiences in borderline personality disorder by Hoeschel, K., Guba, K., Kleindienst, N., Limberger, M. F., Schmahl, C., Bohus, M.

“…Objective:  To test the frequency of attenuated fluid intake behavior (oligodipsia) in patients with borderline personality disorder (BPD) and to test if there…”
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The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation by Peleshchak, R M, Kuzyk, O V, Dan'kiv, O O, Guba, S K

“…In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor…”
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Misfit dislocations and stress in In1 − xGaxAs/GaAs heterostructures by Kurilo, I. V., Guba, S. K.

“…We have estimated the elastic properties of In 1 − x Ga x As/GaAs heterostructures and the characteristics of misfit dislocations in such heterostructures:…”
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Fictitious Efficiency: What the Russian Survey of Performance of Higher Education Institutions Actually Assessed by Guba, Katerina, Sokolov, Mikhail, Tsivinskaya, Angelika

“…Annual Survey of Performance of Higher Education Institutions, conducted in Russia since 2012, was used to identify “inefficient” universities, subject to…”
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Estimative calculations of the dispersion limit for AIIBVI and AIIIBV crystals by Kurilo, I. V., Rudyi, I. A., Guba, S. K.

“…Estimative calculations are carried out for the critical sizes of crystalline grains of some semiconductor compounds A II B VI and A III B V , a further…”
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The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave by Seneta, M. Ya, Peleshchak, R. M, Nesterivskyi, A. I, Lazurchak, N. I, Guba, S. K

“…Condens. Matter Phys., 2021, vol. 24, No. 1, 13401 Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of…”
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The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation by Peleshchak, R. M, Kuzyk, O. V, Dan'kiv, O. O, Guba, S. K

“…Condens. Matter Phys., 2019, vol. 22, No. 1, 13801 In the paper, the effect of the electric field on the conditions of formation and on the period of the…”
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The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave by Seneta, M.Ya, Peleshchak, R.M., Nesterivskyi, A.I., Lazurchak, N.I., Guba, S.K.

“…Within the model of self-consistent connection of quasi-Rayleigh wave with adsorbed atoms, a method of constructing a new class of radiometric sensors of the…”
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Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix by Guba, S. K., Yuzevich, V. N.

“…A theoretical model for calculating the energy characteristics of surfaces of InAs quantum dots in a GaAs(100) matrix is described. The model is based on…”
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Influence of Sinter Charge Composition on Permeability of Sinter Mixture by Baricova, D, Guba, K, Trisc, A, Legemza, J

“…Permeability is a very important factor that effects the process of sintering and sinter properties. The main aim of laboratory measurements was to analyse an…”
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Misfit dislocations and stress in In1 − x Ga x As/GaAs heterostructures by Kurilo, I. V., Guba, S. K.

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Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices by Peleshchak, R. M., Guba, S. K., Kuzyk, O. V., Kurilo, I. V., Dankiv, O. O.

“…The distribution of hydrostatic strains in Bi 3+ -doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential…”
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Transition from a disordered to a crystalline state in II–VI and III–V films by Kurilo, I. V., Guba, S. K., Rudyi, I. O., Virt, I. S.

“…The initial stages of HgCdTe growth on Al 2 O 3 , GaAs, CdTe, and KCl substrates have been studied by electron diffraction. HgCdTe films were produced by…”
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Producing of pover GaAs structures of bipolar and field-effect transistor by CVD-method by Voronin V. A., Guba S. K., Kurilo I. V.

“…Investigation results in technology of doping Sn and Bi of perfect GaAs structures preparation by the lowe-temperature isothermal chloride epitaxy method are…”
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Chemical deposition from gas phase of the hetero and nanostructures of III–V compounds by Voronin V. A., Guba S. K., Kurilo I. V.

“…This is a report of experimental result in-situ metod UV-Spectroscopy on the gas phase composition in the source region GaAs, GaP, In, Ga, In/Ga of gas-flov…”
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Influence of the surface acoustic wave on the electron states of adsorbed semiconductor surface by Seneta, M. Ya, Peleshchak, R. M., Guba, S. K.

“…The theory of electron states is developed on the adsorbed surface of semiconductor which is bounded by the rough surface. The surface roughness are formed by…”
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