Search Results - "Guangzhong Jian"

An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application by Xue, HuiWen, He, QiMing, Jian, GuangZhong, Long, ShiBing, Pang, Tao, Liu, Ming

“…Gallium oxide (Ga 2 O 3 ) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s…”
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Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study by Zhou, Xuanze, Liu, Qi, Xu, Guangwei, Zhou, Kai, Xiang, Xueqiang, He, Qiming, Hao, Weibing, Jian, Guangzhong, Zhao, Xiaolong, Long, Shibing

“…In this article, for the first time, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in the…”
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2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination by Han, Zhao, Jian, Guangzhong, Zhou, Xuanze, He, Qiming, Hao, Weibing, Liu, Jinyang, Li, Botong, Huang, Hong, Li, Qiuyan, Zhao, Xiaolong, Xu, Guangwei, Long, Shibing

“…In this study, we fabricated superb β-Ga 2 O 3 Schottky barrier diodes (SBDs) with high breakdown voltage ( V br ) and low leakage through combining platinum…”
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Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current by Xiong, Wenhao, Zhou, Xuanze, Xu, Guangwei, He, Qiming, Jian, Guangzhong, Chen, Chen, Yu, Yangtong, Hao, Weibing, Xiang, Xueqiang, Zhao, Xiaolong, Mu, Wenxiang, Jia, Zhitai, Tao, Xutang, Long, Shibing

“…This work reports a <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 double-barrier Schottky barrier diode (DBSBD) with…”
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Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier by Wu, Feihong, Wang, Yuangang, Guangzhong Jian, Xu, Guangwei, Zhou, Xuanze, Guo, Wei, Du, Jiahong, Liu, Qi, Dun, Shaobo, Yu, Zhaoan, Lv, Yuanjie, Feng, Zhihong, Cai, Shujun, Long, Shibing

“…Superior performance [Formula Omitted]-gallium oxide ([Formula Omitted]-Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A…”
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Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging by Qin, Yuan, Long, Shibing, He, Qiming, Dong, Hang, Jian, Guangzhong, Zhang, Ying, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Lu, Yingjie, Shan, Chongxin, Wang, Jianlu, Hu, Weida, Lv, Hangbing, Liu, Qi, Liu, Ming

“…Ga2O3‐based solar‐blind photodetectors (PDs) are now attracting more and more attention for their potential application in optical imaging, spatial…”
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Schottky Barrier Rectifier Based on (100) \beta -Ga2O3 and its DC and AC Characteristics by He, Qiming, Mu, Wenxiang, Fu, Bo, Jia, Zhitai, Long, Shibing, Yu, Zhaoan, Yao, Zhihong, Wang, Wei, Dong, Hang, Qin, Yuan, Jian, Guangzhong, Zhang, Ying, Xue, Huiwen, Lv, Hangbing, Liu, Qi, Tang, Minghua, Tao, Xutang, Liu, Ming

“…A Schottky barrier rectifier was fabricated with a (100)-oriented <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3…”
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Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 by Hao, Weibing, He, Qiming, Zhou, Kai, Xu, Guangwei, Xiong, Wenhao, Zhou, Xuanze, Jian, Guangzhong, Chen, Chen, Zhao, Xiaolong, Long, Shibing

“…In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of…”
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Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination by He, Qiming, Hao, Weibing, Zhou, Xuanze, Li, Yu, Zhou, Kai, Chen, Chen, Xiong, Wenhao, Jian, Guangzhong, Xu, Guangwei, Zhao, Xiaolong, Wu, Xiaojun, Zhu, Junfa, Long, Shibing

“…This work demonstrates vertical <inline-formula> <tex-math notation="LaTeX">\boldsymbol {\beta } </tex-math></inline-formula>-Ga 2 O 3 Schottky barrier diodes…”
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Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties by Jian, Guangzhong, He, Qiming, Mu, Wenxiang, Fu, Bo, Dong, Hang, Qin, Yuan, Zhang, Ying, Xue, Huiwen, Long, Shibing, Jia, Zhitai, Lv, Hangbing, Liu, Qi, Tao, Xutang, Liu, Ming

“…β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at…”
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C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 by Dong, Hang, Mu, Wenxiang, Hu, Yuan, He, Qiming, Fu, Bo, Xue, Huiwen, Qin, Yuan, Jian, Guangzhong, Zhang, Ying, Long, Shibing, Jia, Zhitai, Lv, Hangbing, Liu, Qi, Tao, Xutang, Liu, Ming

“…In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100)…”
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GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC-DC Converter by Guo, Wei, Jian, Guangzhong, Hao, Weibing, Wu, Feihong, Zhou, Kai, Du, Jiahong, Zhou, Xuanze, He, Qiming, Yu, Zhaoan, Zhao, Xiaolong, Xu, Guangwei, Long, Shibing

“…β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and…”
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Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination by He, Qiming, Hao, Weibing, Zhou, Xuanze, Li, Yu, Zhou, Kai, Chen, Chen, Xiong, Wenhao, Jian, Guangzhong, Xu, Guangwei, Zhao, Xiaolong, Wu, Xiaojun, Zhu, Junfa, Long, Shibing

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Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG by Fu, Bo, Jian, Guangzhong, Mu, Wenxiang, Li, Yang, Wang, Huanyang, Jia, Zhitai, Li, Yanbin, Long, Shibing, Shi, Yujun, Tao, Xutang

“…•Cylindrical Sn: β-Ga2O3 crystal was grown by the innovative EFG technology.•Growth morphology of cylindrical β-Ga2O3 crystal was studied for the first…”
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Metal–Semiconductor–Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism by Qin, Yuan, Li, Liheng, Zhao, Xiaolong, Tompa, Gary S, Dong, Hang, Jian, Guangzhong, He, Qiming, Tan, Pengju, Hou, Xiaohu, Zhang, Zhongfang, Yu, Shunjie, Sun, Haiding, Xu, Guangwei, Miao, Xiangshui, Xue, Kanhao, Long, Shibing, Liu, Ming

“…In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in solar-blind imaging, deep space…”
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Enhancement-Mode \beta -Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio by Qin, Yuan, Dong, Hang, Long, Shibing, He, Qiming, Jian, Guangzhong, Zhang, Ying, Zhou, Xuanze, Yu, Yangtong, Hou, Xiaohu, Tan, Pengju, Zhang, Zhongfang, Liu, Qi, Lv, Hangbing, Liu, Ming

“…An enhancement-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 metal-oxide-semiconductor field-effect solar-blind…”
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Fast Switching \beta -Ga2O3 Power MOSFET With a Trench-Gate Structure by Dong, Hang, Long, Shibing, Sun, Haiding, Zhao, Xiaolong, He, Qiming, Qin, Yuan, Jian, Guangzhong, Zhou, Xuanze, Yu, Yangtong, Guo, Wei, Xiong, Wenhao, Hao, Weibing, Zhang, Ying, Xue, Huiwen, Xiang, Xueqiang, Yu, Zhaoan, Lv, Hangbing, Liu, Qi, Liu, Ming

“…In this letter, trench-gate metal-oxide-semiconductor field-effect transistors on (010) <inline-formula> <tex-math notation="LaTeX">\beta…”
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2.7 kV Low Leakage Vertical PtO x / β -Ga 2 O 3 Schottky Barrier Diodes With Self-Aligned Mesa Termination by Han, Zhao, Jian, Guangzhong, Zhou, Xuanze, He, Qiming, Hao, Weibing, Liu, Jinyang, Li, Botong, Huang, Hong, Li, Qiuyan, Zhao, Xiaolong, Xu, Guangwei, Long, Shibing

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Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier by Wu, Feihong, Wang, Yuangang, Jian, Guangzhong, Xu, Guangwei, Zhou, Xuanze, Guo, Wei, Du, Jiahong, Liu, Qi, Dun, Shaobo, Yu, Zhaoan, Lv, Yuanjie, Feng, Zhihong, Cai, Shujun, Long, Shibing

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Superior Performance \beta -Ga \text O } Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft-Walton Voltage Multiplier by Wu, Feihong, Wang, Yuangang, Jian, Guangzhong, Xu, Guangwei, Zhou, Xuanze, Guo, Wei, Du, Jiahong, Liu, Qi, Dun, Shaobo, Yu, Zhaoan, Lv, Yuanjie, Feng, Zhihong, Cai, Shujun, Long, Shibing

“…Superior performance <inline-formula> <tex-math notation="LaTeX">\beta</tex-math> </inline-formula>-gallium oxide (<inline-formula> <tex-math…”
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