Search Results - "Gu, S. L."

Intra-individual reaction time variability based on ex-Gaussian distribution as a potential endophenotype for attention-deficit/hyperactivity disorder by Lin, H.-Y., Hwang-Gu, S.-L., Gau, S. S.-F.

“…Objective Intra‐individual variability in reaction time (IIV‐RT), defined by standard deviation of RT (RTSD), is considered as an endophenotype for…”
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Efficacy of ProTaper Universal rotary retreatment system for gutta-percha removal from root canals by Gu, L.-S., Ling, J.-Q, Wei, X., Huang, X.-Y.

“…Aim  To evaluate the efficacy of the ProTaper Universal rotary retreatment system for gutta‐percha (GP) removal from root canals. Methodology  Root canals of…”
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Detection of circulating tumour cells may add value in endometrial cancer management by Ni, T, Sun, X, Shan, B, Wang, J, Liu, Y, Gu, S.-L, Wang, Y.-D

“…Abstract Objective To evaluate the role of circulating tumour cells (CTCs) in patients with endometrial cancer (EC). Study design This study included 40…”
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Neural substrates of behavioral variability in attention deficit hyperactivity disorder: based on ex-Gaussian reaction time distribution and diffusion spectrum imaging tractography by Lin, H-Y, Gau, S S-F, Huang-Gu, S L, Shang, C-Y, Wu, Y-H, Tseng, W-Y I

“…Increased intra-individual variability (IIV) in reaction time (RT) across various tasks is one ubiquitous neuropsychological finding in attention deficit…”
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Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions by Ye, J. D., Gu, S. L., Zhu, S. M., Liu, W., Liu, S. M., Zhang, R., Shi, Y., Zheng, Y. D.

“…The distinct visible electroluminescence (EL) at room temperature has been realized based on n-ZnO∕p-Si heterojunction. The EL peak energy coincided well with…”
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A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode by Gong, H. H., Chen, X. H., Xu, Y., Ren, F.-F., Gu, S. L., Ye, J. D.

“…In this Letter, high-performance vertical NiO/β-Ga2O3 p–n heterojunction diodes without any electric field managements were reported. The devices show a low…”
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Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique by Liu, W., Gu, S. L., Ye, J. D., Zhu, S. M., Liu, S. M., Zhou, X., Zhang, R., Shi, Y., Zheng, Y. D., Hang, Y., Zhang, C. L.

“…We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk…”
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Fermi-level band filling and band-gap renormalization in Ga-doped ZnO by Ye, J. D., Gu, S. L., Zhu, S. M., Liu, S. M., Zheng, Y. D., Zhang, R., Shi, Y.

“…The fundamental optical properties of Ga-doped ZnO films grown by metalorganic chemical vapor deposition were investigated by room-temperature transmittance…”
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β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings by Gong, H. H., Yu, X. X., Xu, Y., Chen, X. H., Kuang, Y., Lv, Y. J., Yang, Y., Ren, F.-F., Feng, Z. H., Gu, S. L., Zheng, Y. D., Zhang, R., Ye, J. D.

“…In this Letter, high-performance β-Ga2O3 vertical heterojunction barrier Schottky (HJBS) diodes have been demonstrated together with the investigation of…”
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Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3 by Li, J., Chen, X. H., Hao, J. G., Ren, F. F., Gu, S. L., Ye, J. D.

“…This study examines the electronic and luminescent properties of β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.42) thin films grown on (0001) sapphire using laser-MBE, with a…”
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On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire by Ma, T. C., Chen, X. H., Kuang, Y., Li, L., Li, J., Kremer, F., Ren, F.-F., Gu, S. L., Zhang, R., Zheng, Y. D., Tan, H. H., Jagadish, C., Ye, J. D.

“…Epitaxial film quality is critical to the success of high-performance α-Ga2O3 vertical power devices. In this work, the origins of threading dislocation…”
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In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction by Hao, J. G., Gong, H. H., Chen, X. H., Xu, Y., Ren, F.-F., Gu, S. L., Zhang, R., Zheng, Y. D., Ye, J. D.

“…The construction of Ga2O3-based p-n heterojunction offers an alternative strategy to realize bipolar power devices; however, lattice mismatch usually leads to…”
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Gallium doping dependence of single-crystal n-type Zno grown by metal organic chemical vapor deposition by Ye, J.D., Gu, S.L., Zhu, S.M., Liu, S.M., Zheng, Y.D., Zhang, R., Shi, Y., Yu, H.Q., Ye, Y.D.

“…High-quality single-crystal Ga-doped ZnO films have been epitaxially deposited on (0 0 0 2) sapphire substrate by low-pressure metal organic chemical vapor…”
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Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes by Wang, Z. P., Gong, H. H., Yu, X. X., Hu, T. C., Ji, X. L., Ren, F.-F., Gu, S. L., Zheng, Y. D., Zhang, R., Ye, J. D.

“…In this Letter, the trap inhomogeneity within β-Ga2O3 is correlated with the conversion of Shockley–Read–Hall (SRH) recombination in NiO/β-Ga2O3 p+–n…”
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Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination by Sun, N., Gong, H. H., Hu, T. C., Zhou, F., Wang, Z. P., Yu, X. X., Ren, F.-F, Gu, S. L., Lu, H., Zhang, R., Ye, J. D.

“…Power devices rely on ideal edge termination to suppress the electric field crowding and avoid premature breakdown before the material's critical field is…”
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Chitosan-Based Extrafibrillar Demineralization for Dentin Bonding by Gu, L.S., Cai, X., Guo, J.M., Pashley, D.H., Breschi, L., Xu, H.H.K., Wang, X.Y., Tay, F.R., Niu, L.N.

“…Instability of resin-dentin bonds is the Achilles’ heel of adhesive dentistry. To address this problem, a chelate-and-rinse extrafibrillar dentin…”
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Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition by Liu, D. Y., Hao, L. C., Chen, Z. A., Zhao, W. K., Shen, Y., Bian, Y., Tang, K., Ye, J. D., Zhu, S. M., Zhang, R., Zheng, Y. D., Gu, S. L.

“…In this work, sulfur addition has been employed on the boron-doped diamond growth process, and a significant regulation of the boron doping and the growth…”
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Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface by Chen, X. H., Chen, Y. T., Ren, F.-F., Gu, S. L., Tan, H. H., Jagadish, C., Ye, J. D.

“…Understanding the electronic structures at the interfaces of wide bandgap oxide heterostructures is crucial for the rational design of oxide-based…”
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A self-aligned Ga2O3 heterojunction barrier Schottky power diode by Hu, T. C., Wang, Z. P., Sun, N., Gong, H. H., Yu, X. X., Ren, F. F., Yang, Y., Gu, S. L., Zheng, Y. D., Zhang, R., Ye, J. D.

“…We report an alignment-free gallium oxide (Ga2O3) heterojunction barrier Schottky (HJBS) power diode, which utilizes the self-assembled Ni nanostructures as in…”
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A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction by Sun, X. Y., Chen, X. H., Hao, J. G., Wang, Z. P., Xu, Y., Gong, H. H., Zhang, Y. J., Yu, X. X., Zhang, C. D., Ren, F.-F., Gu, S. L., Zhang, R., Ye, J. D.

“…In this work, we demonstrated the self-powered solar-blind photodetector based on a polyaniline/α-Ga2O3 hybrid heterojunction. The resultant device exhibited…”
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