Search Results - "Grutzmacher, Detlev"

Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si by Marzban, Bahareh, Seidel, Lukas, Liu, Teren, Wu, Kui, Kiyek, Vivien, Zoellner, Marvin Hartwig, Ikonic, Zoran, Schulze, Joerg, Grützmacher, Detlev, Capellini, Giovanni, Oehme, Michael, Witzens, Jeremy, Buca, Dan

“…SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate…”
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Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires by Kaladzhian, Mane, von den Driesch, Nils, Demarina, Nataliya, Povstugar, Ivan, Zimmermann, Erik, Jansen, Marvin Marco, Bae, Jin Hee, Krause, Christoph, Bennemann, Benjamin, Grützmacher, Detlev, Schäpers, Thomas, Pawlis, Alexander

“…Core-only InAs nanowires (NWs) remain of continuing interest for application in modern optical and electrical devices. In this paper, we utilize the II–VI…”
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Electrically Pumped GeSn Micro-Ring Lasers by Liu, Teren, Seidel, Lukas, Concepcion, Omar, Reboud, Vincent, Chelnokov, Alexei, Capellini, Giovanni, Oehme, Michael, Grutzmacher, Detlev, Buca, Dan

“…Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first…”
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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters by von den Driesch, Nils, Stange, Daniela, Wirths, Stephan, Rainko, Denis, Povstugar, Ivan, Savenko, Aleksei, Breuer, Uwe, Geiger, Richard, Sigg, Hans, Ikonic, Zoran, Hartmann, Jean‐Michel, Grützmacher, Detlev, Mantl, Siegfried, Buca, Dan

“…SiGeSn ternaries are grown on Ge‐buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm,…”
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Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry by Spirito, Davide, von den Driesch, Nils, Manganelli, Costanza Lucia, Zoellner, Marvin Hartwig, Corley-Wiciak, Agnieszka Anna, Ikonic, Zoran, Stoica, Toma, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni

“…Energy harvesting for Internet of Things applications, comprising sensing, life sciences, wearables, and communications, requires efficient thermoelectric (TE)…”
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Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires by Haas, Fabian, Zellekens, Patrick, Lepsa, Mihail, Rieger, Torsten, Grützmacher, Detlev, Lüth, Hans, Schäpers, Thomas

“…We present low-temperature magnetotransport measurements on GaAs/InAs core/shell nanowires contacted by regular source–drain leads as well as laterally…”
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Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering by Buca, Dan, Bjelajac, Andjelika, Spirito, Davide, Concepción, Omar, Gromovyi, Maksym, Sakat, Emilie, Lafosse, Xavier, Ferlazzo, Laurence, Driesch, Nils, Ikonic, Zoran, Grützmacher, Detlev, Capellini, Giovanni, El Kurdi, Moustafa

“…The success of GeSn alloys as active material for infrared lasers could pave the way toward a monolithic technology that can be manufactured within mainstream…”
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Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm by Liu, Mingshan, Scholz, Stefan, Hardtdegen, Alexander, Bae, Jin Hee, Hartmann, Jean-Michel, Knoch, Joachim, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

“…In this work, we demonstrate vertical Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a CMOS compatible top-down approach. Vertical Ge nanowires…”
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Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires by Stoica, Toma, Sutter, Eli, Meijers, Ralph J., Debnath, Ratan K., Calarco, Raffaella, Lüth, Hans, Grützmacher, Detlev

“…Nanowire growth: Catalyst‐free growth of GaN nanowires on Si substrates (see image) is investigated by high‐resolution transmission electron microscopy. Small…”
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Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes by Xi, Fengben, Grenmyr, Andreas, Zhang, Jiayuan, Han, Yi, Bae, Jin Hee, Grützmacher, Detlev, Zhao, Qing‐Tai

“…Neuromorphic computing employs a great number of artificial synapses which transfer information between neurons. Conventional two‐ or three‐terminal artificial…”
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Epitaxial GeSn/Ge Vertical Nanowires for p‑Type Field-Effect Transistors with Enhanced Performance by Liu, Mingshan, Yang, Dong, Shkurmanov, Alexander, Bae, Jin Hee, Schlykow, Viktoria, Hartmann, Jean-Michel, Ikonic, Zoran, Baerwolf, Florian, Costina, Ioan, Mai, Andreas, Knoch, Joachim, Grützmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

“…Harvesting the full potential of single-crystal semiconductor nanowires (NWs) for advanced nanoscale field-effect transistors (FETs) requires a smart…”
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Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications by Xi, Fengben, Han, Yi, Grenmyr, Andreas, Grutzmacher, Detlev, Zhao, Qing-Tai

“…In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated…”
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Si substrate preparation for the VS and VLS growth of InAs nanowires by Rieger, Torsten, Grützmacher, Detlev, Lepsa, Mihail Ion

“…The growth of self‐catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using…”
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MBE Growth and Optical Properties of Isotopically Purified ZnSe Heterostructures by Pawlis, Alexander, Mussler, Gregor, Krause, Christoph, Bennemann, Benjamin, Breuer, Uwe, Grützmacher, Detlev

“…Wide-gap II/VI heterostructures (HS) and quantum wells (QW) composed of ZnSe, CdSe, MgSe, and their ternary and quaternary compounds are attractive candidates…”
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High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain by Han, Yi, Sun, Jingxuan, Bae, Jin-Hee, Grutzmacher, Detlev, Knoch, Joachim, Zhao, Qing-Tai

“…The effect of band edge states is the critical issue for cryogenic CMOS, which worsens the performance of conventional MOSFETs at cryogenic temperature…”
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Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors by Winden, Andreas, Mikulics, Martin, Haab, Anna, Grützmacher, Detlev, Hardtdegen, Hilde

“…In this paper, we report on the fabrication of InN nanopyramid-based photodetectors operating within the telecommunication wavelength range. We found that the…”
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Highly Transparent Conducting Polymer Top Contacts for Future III--Nitride Based Single Photon Emitters by Riess, Sally, Mikulics, Martin, Winden, Andreas, Adam, Roman, Marso, Michel, Grützmacher, Detlev, Hardtdegen, Hilde

“…In this paper we report on a simple conductive polymer based contacting technology for III--nitride based nanostructures with respect to the electrical…”
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys by Elbaz, Anas, Buca, Dan, von den Driesch, Nils, Pantzas, Konstantinos, Patriarche, Gilles, Zerounian, Nicolas, Herth, Etienne, Checoury, Xavier, Sauvage, Sébastien, Sagnes, Isabelle, Foti, Antonino, Ossikovski, Razvigor, Hartmann, Jean-Michel, Boeuf, Frédéric, Ikonic, Zoran, Boucaud, Philippe, Grützmacher, Detlev, El Kurdi, Moustafa

“…Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a…”
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Ge quantum dot molecules and crystals: Preparation and properties by Dais, Christian, Solak, Harun H., Ekinci, Yasin, Müller, Elisabeth, Sigg, Hans, Grützmacher, Detlev

“…Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si…”
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Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications by Xi, Fengben, Han, Yi, Liu, Mingshan, Bae, Jin Hee, Tiedemann, Andreas, Grützmacher, Detlev, Zhao, Qing-Tai

“…Artificial synapses based on ferroelectric Schottky barrier field-effect transistors (FE-SBFETs) are experimentally demonstrated. The FE-SBFETs employ…”
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