Search Results - "Gruska, Bernd"

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films by Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter

“…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and…”
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Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study by Sowińska, Małgorzata, Henkel, Karsten, Schmeißer, Dieter, Kärkkänen, Irina, Schneidewind, Jessica, Naumann, Franziska, Gruska, Bernd, Gargouri, Hassan

“…The process parameters' impact of the plasma-enhanced atomic layer deposition (PE-ALD) method on the oxygen to nitrogen (O/N) ratio in titanium oxynitride…”
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Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties by Das, Chittaranjan, Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, Arens, Michael

“…Titanium oxide (TiO2) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric…”
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Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties by Das, Chittaranjan, Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, Arens, Michael

“…Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a…”
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Capacitance and conductance versus voltage characterization of Al{sub 2}O{sub 3} layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C by Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Gruska, Bernd, Arens, Michael

“…In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and…”
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Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C by Henkel, Karsten, Gargouri, Hassan, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter

“…In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and…”
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Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al 2 O 3 -films by Haeberle, Jörg, Henkel, Karsten, Gargouri, Hassan, Naumann, Franziska, Gruska, Bernd, Arens, Michael, Tallarida, Massimo, Schmeißer, Dieter

“…We report on results on the preparation of thin (<100 nm) aluminum oxide (Al 2 O 3 ) films on silicon substrates using thermal atomic layer deposition (T-ALD)…”
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Characterisation of epitaxial layers on silicon by spectroscopic ellipsometry by Dittmar, Georg, Gruska, Bernd

“…The characterisation of epitaxial layers on silicon substrates is becoming more and more important, especially as the thicknesses of the layers decrease…”
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Characterization of Sputtered Ta and TaN Films by Spectroscopic Ellipsometry by Waechtler, T., Gruska, B., Zimmermann, S., Schulz, S.E., Gessner, T.

“…Spectroscopic ellipsometry is emerging as a routine tool for in-situ and ex-situ thin-film characterization in semiconductor manufacturing. For interconnects…”
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