Search Results - "Gritsenko, V. A"

Refine Results
  1. 1

    Charge Transport in Amorphous Silicon Nitride by Novikov, Yu. N., Gritsenko, V. A.

    “…Charge transport in amorphous silicon nitride (Si 3 N 4 ) is studied experimentally in a wide range of electric fields and temperatures. The experimental data…”
    Get full text
    Journal Article
  2. 2

    Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride by Islamov, D. R., Perevalov, T. V., Gismatulin, A. A., Azarov, I. A., Spesivtsev, E. V., Gritsenko, V. A.

    “…A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer…”
    Get full text
    Journal Article
  3. 3

    Multiphonon Ionization of Deep Centers in Amorphous Boron Nitride by Novikov, Yu. N., Gritsenko, V. A.

    Published in JETP letters (01-10-2021)
    “…Charge transport in amorphous boron nitride (BN) in a wide range of electric fields and temperatures has been experimentally considered. The method of…”
    Get full text
    Journal Article
  4. 4

    Defects in silicon oxynitride gate dielectric films by Wong, Hei, Gritsenko, V.A.

    Published in Microelectronics and reliability (01-04-2002)
    “…As the aggressive scaling of the metal-oxide-semiconductor structure continues, new reliability challenges in gate dielectric materials now came across as the…”
    Get full text
    Journal Article
  5. 5

    Nature of traps responsible for the memory effect in silicon nitride by Gritsenko, V. A., Perevalov, T. V., Orlov, O. M., Krasnikov, G. Ya

    Published in Applied physics letters (08-08-2016)
    “…Nature of traps responsible for the memory effect in Si3N4 still remains the subject matter of much discussion. Based on our quantum chemical simulation…”
    Get full text
    Journal Article
  6. 6

    Origin of traps and charge transport mechanism in hafnia by Islamov, D. R., Gritsenko, V. A., Cheng, C. H., Chin, A.

    Published in Applied physics letters (01-12-2014)
    “…In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of…”
    Get full text
    Journal Article
  7. 7

    Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH Dielectric by Perevalov, T. V., Gismatulin, A. A., Gritsenko, V. A., Xu, H., Zhang, J., Vorotilov, K. A., Baklanov, M. R.

    Published in Journal of electronic materials (01-05-2022)
    “…One of the most important issues during the selection of low- k dielectrics is related to their intrinsic properties including their electric breakdown and…”
    Get full text
    Journal Article
  8. 8

    Laboratory and Numerical Study of the Peculiarities of Sea Surface Cooling in Coastal Waters by Kupriyanova, A. E., Gritsenko, V. A.

    Published in Izvestiya. Atmospheric and oceanic physics (01-07-2021)
    “…The initial phases of penetration of cold waters from the sea surface into the depth are analyzed within a study of the process of sea surface cooling. The…”
    Get full text
    Journal Article
  9. 9

    Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering by Kruchinin, V. N., Perevalov, T. V., Atuchin, V. V., Gritsenko, V. A., Komonov, A. I., Korolkov, I. V., Pokrovsky, L. D., Shih, Cheng Wei, Chin, Albert

    Published in Journal of electronic materials (01-10-2017)
    “…Titanium dioxide (anatase, a-TiO 2 ) films have been prepared by electron beam sputtering of a TiO 2 target in reactive atmosphere and their structural,…”
    Get full text
    Journal Article
  10. 10

    Charge transport in amorphous Hf0.5Zr0.5O2 by Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., Chin, A.

    Published in Applied physics letters (09-03-2015)
    “…In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling…”
    Get full text
    Journal Article
  11. 11

    Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma by Perevalov, T. V., Iskhakzai, R. M. Kh, Prosvirin, I. P., Aliev, V. Sh, Gritsenko, V. A.

    Published in JETP letters (2022)
    “…It is shown that the treatment of stoichiometric HfO 2 , which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads…”
    Get full text
    Journal Article
  12. 12

    Calibrating and monitoring the western gray whale mitigation zone and estimating acoustic transmission during a 3D seismic survey, Sakhalin Island, Russia by Rutenko, A. N, Borisov, S. V, Gritsenko, A. V, Jenkerson, M. R

    Published in Environmental monitoring and assessment (01-11-2007)
    “…A 3D marine seismic survey of the Odoptu license area off northeastern Sakhalin Island, Russia, was conducted by DalMorNefteGeofizika (DMNG) on behalf of Exxon…”
    Get full text
    Journal Article
  13. 13

    Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data by Kruchinin, V. N., Spesivtsev, E. V., Rykhlitsky, C. V., Gritsenko, V. A., Mehmood, F., Mikolajick, T., Schroeder, U.

    Published in Optics and spectroscopy (01-07-2023)
    “…Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory,…”
    Get full text
    Journal Article
  14. 14

    Memory Properties of SiOx- and SiNx-Based Memristors by Gritsenko, V A, Gismatulin, A A, Orlov, O M

    Published in Nanotechnologies in Russia (01-11-2021)
    “…Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained…”
    Get full text
    Journal Article
  15. 15

    Bipolar conductivity in nanocrystallized TiO2 by Islamov, D. R., Gritsenko, V. A., Cheng, C. H., Chin, A.

    Published in Applied physics letters (16-07-2012)
    “…This study calculated the contribution of electrons and holes to TiO2 conductivity in Si/TiO2/Ni structures by conducting experiments on the injection of…”
    Get full text
    Journal Article
  16. 16

    The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide by Perevalov, T. V., Aliev, V. Sh, Gritsenko, V. A., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V.

    Published in Applied physics letters (17-02-2014)
    “…The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2 eV of hafnia has been studied in stoichiometric and…”
    Get full text
    Journal Article
  17. 17

    Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride by Volodin, V. A., Gritsenko, V. A., Chin, A.

    Published in Technical physics letters (01-05-2018)
    “…Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si 3 N 4 ) reveal a contribution due to local oscillations of silicon–silicon…”
    Get full text
    Journal Article
  18. 18

    Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition by Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K., Prosvirin, I. P.

    Published in JETP letters (2019)
    “…Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been…”
    Get full text
    Journal Article
  19. 19

    Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2 by Perevalov, T. V., Gritsenko, V. A., Islamov, D. R., Prosvirin, I. P.

    Published in JETP letters (2018)
    “…The electronic structure of stoichiometric and oxygen-depleted Hf 0.5 Zr 0.5 O 2 in the orthorhombic noncentrosymmetric phase has been studied by X-ray…”
    Get full text
    Journal Article
  20. 20

    Development of a Vertical Mashing Machine and Specifying its Main Parameters by A. V. Bogdanov, A. V. Gritsenko, M. V. Cheskidov, L. A. Shtrikker

    “…The paper proves the necessity to create new modernized types of fruit and vegetable processing machines. The paper highlights the importance of such machinery…”
    Get full text
    Journal Article