Search Results - "Grimmeiss, H.G"

Charge transfer state of novel molecular complex C26H18Te2·C60·CS2 detected in single crystals by photoluminescence and ESR by Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

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Sonoluminescence and acoustically driven optical phenomena in solids and solid–gas interfaces by Ostrovskii, I.V., Korotchenkov, O.A., Goto, T., Grimmeiss, H.G.

“…During the last decade, significant progress has been achieved in our understanding of the generation of light in acoustic fields, a research area which is…”
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Charge transfer state of novel molecular complex C 26H 18Te 2·C 60·CS 2 detected in single crystals by photoluminescence and ESR by Steinman, E.A, Kveder, V.V, Konarev, D.V, Qin, Wang, Grimmeiss, H.G

“…Photoluminescence (PL), time resolved PL and optical absorption spectra near the band gap energy and in the range of IR active vibration modes of a novel…”
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Alloy fluctuations in Si 1− xGe x crystals by Kocher, G., Jantsch, W., Abrosimov, N., Egorov, S., Zabrodskii, A., Andreev, B., Grimmeiss, H.G.

“…We have introduced S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content…”
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Alloy fluctuations in Si1−xGex crystals by Kocher, G., Jantsch, W., Abrosimov, N., Egorov, S., Zabrodskii, A., Andreev, B., Grimmeiss, H.G.

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Preface by Müssig, H.-J., Marletta, G., Grimmeiss, H.G., Solórzano, G., Fan, S.

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PII: S0928-4931(06)00273-6 by Müssig, H.-J., Marletta, G., Grimmeiss, H.G., Solórzano, G., Fan, S.

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Electron capture properties of multi-DX levels in Si doped AlGaAs by Jia, Y.B., Grimmeiss, H.G.

“…Electron capture properties of DX centers in Si doped Al 0.3Ga 0.7As have been studied by analyzing the decay transients of photoconductivity. In contrast to…”
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SiGe: a promise into reality? by Grimmeiss, H.G., Olajos, J., Engvall, J.

“…The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using…”
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Further evidence for the C-line pseudodonor model in irradiated Czochralski-grown silicon by KLEVERMAN, M, FORNELL, J.-O, OLAJOS, J, GRIMMEISS, H. G, LINDSTROM, J. L

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Applicability of the deformation-potential approximation to deep donors in silicon by BERGMAN, K, GROSSMANN, G, GRIMMEISS, H. G, STAVOLA, M, MCMURRAY, R. E. JR

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