Search Results - "Grimmeiss, H. G."

Structure of gold in silicon by WATKINS, G. D, KLEVERMAN, M, THILDERKVIST, A, GRIMMEISS, H. G

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Identification of the chlorine A center in CdTe by HOFMANN, D. M, OMLING, P, GRIMMEISS, H. G, MEYER, B. K, BENZ, K. W, SINERIUS, D

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Electron capture properties of multi-DX levels in Si doped AlGaAs by Jia, Y.B., Grimmeiss, H.G.

“…Electron capture properties of DX centers in Si doped Al 0.3Ga 0.7As have been studied by analyzing the decay transients of photoconductivity. In contrast to…”
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Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx by SAMUELSON, L, NILSSON, S, WANG, Z.-G, GRIMMEISS, H. G

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Shallow acceptors and p -type ZnSe by Kosai, K., Fitzpatrick, B. J., Grimmeiss, H. G., Bhargava, R. N., Neumark, G. F.

“…Shallow acceptors have been incorporated in ZnSe by liquid-phase epitaxy using Bi as a solvent. Epilayers with Li, Na, N, and P as dopants were proven to be p…”
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Silicon-germanium—a promise into the future? by Grimmeiss, H. G.

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Observation of a persistent negative photoconductivity effect in AlGaAs/GaAs modulation-doped structures by POWELL, A. L, BUTTON, C. C, ROBERTS, J. S, ROCKETT, P. I, GRIMMEISS, H. G, PETTERSSON, H

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Evidence that the 0.635-eV luminescence band in semi-insulating GaAs is not EL2 related by SAMUELSON, L, OMLING, P, GRIMMEISS, H. G

“…By utilizing the quenching effect of the deep EL2 defect in semi-insulating GaAs in different optical measurements, it has been possible to show that the…”
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Line spectrum of the interstitial iron donor in silicon by OLAJOS, J, NIELSEN, B. B, KLEVERMAN, M, OMLING, P, EMANUELSSON, P, GRIMMEISS, H. G

“…Photothermal ionization spectroscopy and infrared transmission measurements have been carried out on iron-doped silicon. A series of sharp lines in the range…”
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Identification of hole transitions at the neutral interstitial manganese center in silicon by BEVER, T, EMANUELSSON, P, KLEVERMAN, M, GRIMMEISS, H. G

“…The observation of a sharp line transmission spectrum in Mn-doped silicon is reported. Isochronal annealing behavior of both the line spectrum and the…”
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Acoustically pumped stimulated emission in GaAs/AlGaAs quantum wells by Nadtochii, AB, Korotchenkov, OA, Grimmeiss, Hermann

“…We report on an extremely narrow linewidth of a two-dimensional electron-gas photoluminescence in GaAs/AlGaAs quantum wells pumped by ultrasonic vibrations…”
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Observation of spin-triplet states for double donors in silicon by BERGMAN, K, GROSSMANN, G, GRIMMEISS, H. G, STAVOLA, M

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Electronic defect characterization in silicon by GRIMMEISS, H. G, KLEVERMAN, M, OLAJOS, J, OMLING, P

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Dislocation-related electroluminescence at room temperature in plastically deformed silicon by Kveder, VV, Steinman, EA, Shevchenko, SA, Grimmeiss, HG

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High-resolution studies of sulfur- and selenium-related donor centers in silicon by JANZEN, E, STEDMAN, R, GROSSMANN, G, GRIMMEISS, H. G

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High-resolution spectroscopy of silver-doped silicon by OLAJOS, J, KLEVERMAN, M, GRIMMEISS, H. G

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Excited State Spectroscopy of Deep Defects in Silicon by Kleverman, M, Olajos, J, Grossmann, G, Nielsen, B Bech, Grimmeiss, H G

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Complex nature of gold-related deep levels in silicon by Lang, D. V., Grimmeiss, H. G., Meijer, E., Jaros, M.

“…Measurements of the thermal and optical properties of the Au acceptor level in Si are reported. From a comparison of these properties measured in two types of…”
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Capture from free-carrier tails in the depletion region of junction barriers by Grimmeiss, H. G., Ledebo, L.-Å., Meijer, E.

“…Junction experiments have been proposed in which measurements of depletion capacitance as a function of decreasing reverse bias are used to determine the…”
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Electroluminescence at room temperature of a SinGem strained-layer superlattice by ENGVALL, J, OLAJOS, J, GRIMMEISS, H. G, PRESTING, H, KIBBEL, H, KASPER, E

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