Search Results - "Grill, Alfred"
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Porous pSiCOH Ultralow- k Dielectrics for Chip Interconnects Prepared by PECVD
Published in Annual review of materials research (01-08-2009)“…Porous pSiCOH materials with ultralow dielectric constants (ulk) have been developed with dielectric constants reaching values below 2.0. The pSiCOH films,…”
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Wafer-Scale Graphene Integrated Circuit
Published in Science (American Association for the Advancement of Science) (10-06-2011)“…A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically…”
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Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography
Published in ACS nano (28-08-2012)“…A process for fabricating dense graphene nanoribbon arrays using self-assembled patterns of block copolymers on graphene grown epitaxially on SiC on the wafer…”
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Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene
Published in Applied physics letters (30-05-2011)“…We show that the surface morphology and electrical properties of graphene grown on SiC(0001) wafers depend strongly on miscut angle, even for nominally…”
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5
Multicarrier transport in epitaxial multilayer graphene
Published in Applied physics letters (13-09-2010)“…Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type…”
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How to restore superlow friction of DLC: the healing effect of hydrogen gas
Published in Tribology international (01-11-2004)“…Among diamond-like carbon coatings, hydrogenated amorphous carbon films have the characteristic of exhibiting superlow friction under ultra-high vacuum…”
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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Published in Applied physics letters (28-03-2011)“…We use ultrahigh vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers, which are then annealed between…”
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Nanoindentation Analysis of Mechanical Properties of Low to Ultralow Dielectric Constant SiCOH Films
Published in Journal of materials research (01-08-2005)“…Carbon-doped oxide SiCOH films with low to ultralow dielectric constants were prepared on a Si substrate by plasma-enhanced chemical vapor deposition (PECVD)…”
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Diamond-like carbon: state of the art
Published in Diamond and related materials (01-03-1999)“…Diamond-like carbon films, amorphous hydrogenated or non-hydrogenated forms of carbon, are metastable amorphous materials characterized by attractive…”
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SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery
Published in Applied physics letters (01-05-2017)“…Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after…”
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Optimal Filler Sizes for Thermal Interface Materials
Published in 2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) (01-05-2019)“…The principal challenge in developing a new thermal interface material (TIM)is to co-design its micro-attributes (e.g. filler type, packing fraction, size…”
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Conference Proceeding -
12
Effect of SiC wafer miscut angle on the morphology and Hall mobilityof epitaxially grown graphene
Published in Applied physics letters (02-06-2011)“…We show that the surface morphology and electrical properties of graphene grown on SiC(0001) wafers depend strongly on miscut angle, even for nominally…”
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13
Chemical solution deposition of BaSrTiO3 films
Published in Integrated ferroelectrics (01-09-1997)“…We compared three chemical solution deposition routes to Ba x Sr 1-x TiO 3 (BST) films. A metal organic decomposition (MOD) solution composed of barium and…”
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14
Multilayer epitaxial graphene formed by pyrolysis of polycrystallinesilicon-carbide grown on c-plane sapphire substrates
Published in Applied physics letters (01-04-2011)“…We use ultrahigh vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers, which are then annealed between…”
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15
Fluorinated diamond-like carbon protective coating for magnetic recording media devices
Published in Journal of fluorine chemistry (1998)Get full text
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CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer
Published in 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014) (01-05-2014)“…In this work, we report a new fabrication method of Si nanowires that enables an accurate control of the suspension gap underneath the Si wire. It is achieved…”
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Conference Proceeding -
17
Frequency response of top-gated carbon nanotube field-effect transistors
Published in IEEE transactions on nanotechnology (01-09-2004)“…The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain…”
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Graphene technology for RF and THz applications
Published in 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) (01-06-2013)“…This work presents recent advances in the development of graphene technology for various applications from RF to THz frequencies. First, large-scale graphene…”
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Conference Proceeding -
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Electrical characterization of wafer-scale epitaxial graphene and its RF applications
Published in 2011 IEEE MTT-S International Microwave Symposium (01-06-2011)“…High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by…”
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Conference Proceeding -
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Post porosity plasma protection integration at 48 nm pitch
Published in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) (01-05-2016)“…Integration of high porosity low-k dielectrics faces major challenges as the porosity weakens the dielectric, resulting in severe plasma induced damage (PID)…”
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Conference Proceeding Journal Article