Search Results - "Grigoryev, D. V."
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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air
Published in Surface & coatings technology (15-04-2020)“…In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on…”
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Distribution of the surface potential of epitaxial HgCdTe
Published in Applied physics letters (08-09-2014)“…We studied the distribution of surface potential of the Hg1−xCdxTe epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of…”
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Electrical Properties of the V-Defects of Epitaxial HgCdTe
Published in Journal of electronic materials (01-07-2017)“…The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the…”
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Investigation of the surface-potential distribution of epitaxial CdHgTe films
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01-09-2016)“…The epitaxial growth of CdHgTe films is accompanied by the formation of V defects whose density and electronic properties greatly affect the characteristics of…”
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The blue vibronically resolved electroluminescence of azatrioxa[8]circulene
Published in Chemical physics letters (01-10-2019)“…[Display omitted] •The blue OLED device is fabricated.•The vibronic spectrum of dye is simulated.•The vibronic analysis of electroluminescence spectrum is…”
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Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01-06-2016)“…In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition…”
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Conference Proceeding -
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Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film
Published in Semiconductors (Woodbury, N.Y.) (15-03-2015)“…Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial…”
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Investigation of surface potential in the V-defect region of MBE CdxHg1 − xTe film
Published in Semiconductors (Woodbury, N.Y.) (2015)“…Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg 1 − x Te epitaxial films…”
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9
Investigation of surface potential in the V-defect region of MBE Cd x Hg1 − x Te film
Published in Semiconductors (Woodbury, N.Y.) (01-03-2015)Get full text
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10
Calculation of thermal parameters of SiGe microbolometers
Published 30-08-2012“…Russian Physics Journal, Vol. 50, No. 12, 2007, p. 1218 The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The…”
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Calculation of thermal parameters of SiGe microbolometers
Published in Russian physics journal (01-12-2007)Get full text
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