Search Results - "Griffoni, A"

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs by El-Mamouni, F., Zhang, E. X., Pate, N. D., Hooten, N., Schrimpf, R. D., Reed, R. A., Galloway, K. F., McMorrow, D., Warner, J., Simoen, E., Claeys, C., Griffoni, A., Linten, D., Vizkelethy, G.

“…Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs. Transients show distinct signatures for charge collection from drift and…”
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Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress by Rech, P., Galliere, J.-M., Girard, P., Griffoni, A., Boch, J., Wrobel, F., Saigne, F., Dilillo, L.

“…We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4 Mbits and 32 Mbits when irradiated with neutrons. The devices were irradiated at…”
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Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs by Mahatme, N. N., Zhang, E. X., Reed, R. A., Bhuva, B. L., Schrimpf, R. D., Fleetwood, D. M., Linten, D., Simoen, E., Griffoni, A., Aoulaiche, M., Jurczak, M., Groeseneken, G.

“…In this paper we investigate how geometry impacts the memory characteristics of 1-transistor dynamic floating body RAMs (FBRAMs) under total ionizing dose…”
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ESD characterization of multi-chip RGB LEDs by Vaccari, S., Meneghini, M., Griffoni, A., Barbisan, D., Barbato, M., Carraro, S., La Grassa, M., Meneghesso, G., Zanoni, E.

“…•A ESD characterization of multi-chip RGB LEDs is proposed.•We have submitted LEDs to ESD tests by means of a transmission Line Pulser (TLP).•Red LEDs have an…”
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A Statistical Approach to Microdose Induced Degradation in FinFET Devices by Griffoni, A., Gerardin, S., Roussel, P.J., Degraeve, R., Meneghesso, G., Paccagnella, A., Simoen, E., Claeys, C.

“…We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the…”
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Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications by Thijs, S., Tremouilles, D., Russ, C., Griffoni, A., Collaert, N., Rooyackers, R., Linten, D., Scholz, M., Duvvury, C., Gossner, H., Jurczak, M., Groeseneken, G.

“…Electrostatic discharge performance of advanced FinFETs shows a delicate sensitivity to device layout and to processing parameters. Both N- and P-type MOS…”
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Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs by Griffoni, A., Gerardin, S., Meneghesso, G., Paccagnella, A., Simoen, E., Put, S., Claeys, C.

“…We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices. We highlighted the role of the geometry and the…”
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Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques by Griffoni, A., Gerardin, S., Cester, A., Paccagnella, A., Simoen, E., Claeys, C.

“…We study the immediate and long-term effects of heavy-ion strikes on 65-nm Fully Depleted SOI MOSFETs with different strain engineering solutions. Some of the…”
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Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide by Gerardin, S., Griffoni, A., Tazzoli, A., Cester, A., Meneghesso, G., Paccagnella, A.

“…We present new results on electrostatic discharges in fully depleted SOI MOSFETs struck by heavy ions. We investigate the sensitivity of irradiated MOSFETs to…”
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Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress by Gerardin, S., Griffoni, A., Cester, A., Paccagnella, A., Ghidini, G.

“…We study the degradation of CMOS inverters under DC and pulsed stress conditions before the occurrence of the gate oxide breakdown. Our results show an overall…”
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Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays by Griffoni, A., Silvestri, M., Gerardin, S., Meneghesso, G., Paccagnella, A., Kaczer, B., de Potter de ten Broeck, M., Verbeeck, R., Nackaerts, A.

“…We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different…”
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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors by Simoen, E., Gaillardin, M., Paillet, P., Reed, R. A., Schrimpf, R. D., Alles, M. L., El-Mamouni, F., Fleetwood, D. M., Griffoni, A., Claeys, C.

“…The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art…”
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Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology by Griffoni, A, Chen, S.-H, Thijs, S, Linten, D, Scholz, M, Groeseneken, G

“…The turn-on behavior of high-voltage-tolerant nLDMOS SCRs is investigated during CDM ESD events. An early failure occurs because of gate-oxide damage. A device…”
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Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices by Chen, S.-H, Thijs, S., Griffoni, A., Linten, D., De Keersgieter, A., Groeseneken, G.

“…Unexpected gate oxide failure has been observed during HBM ESD stress on high-voltage tolerant nLDMOS-SCR devices in standard low-voltage CMOS technology. TCAD…”
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Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates by Kobayashi, D, Simoen, E, Put, S, Griffoni, A, Poizat, M, Hirose, K, Claeys, C

“…Proton irradiation effects on fin-type field effect transistors (FinFETs) are examined from the viewpoint of their electrical-performance parameter of…”
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Neutron-Induced Soft Errors in Graphic Processing Units by Rech, P., Aguiar, C., Ferreira, R., Silvestri, M., Griffoni, A., Frost, C., Carro, L.

“…This paper presents and analyzes the results of neutron experiments on 40nm Graphic Processing Units. We have measured the internal memory resources cross…”
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Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices by Griffoni, A, Shih-Hung Chen, Thijs, S, Kaczer, B, Franco, J, Linten, D, De Keersgieter, A, Groeseneken, G

“…The OFF-state degradation of n-channel laterally diffused metal-oxide-semiconductor (MOS) silicon-controlled-rectifier electrostatic-discharge (ESD) devices…”
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HBM parameter extraction and Transient Safe Operating Area by Linten, D, Thijs, S, Griffoni, A, Scholz, M, Chen, S.-H, Lafonteese, D, Vashchenko, V, Sawada, M, Concannon, A, Hopper, P, Jansen, P, Groeseneken, G

“…The extraction of ESD parameters and a Transient Safe Operating Area (TSOA) based on on-wafer HBM-IV measurements with voltage and current waveform capturing…”
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SCCF - System to component level correlation factor by Thijs, S, Scholz, M, Linten, D, Griffoni, A, Russ, C, Stadler, W, Lafonteese, D, Vashchenko, V, Sawada, M, Concannon, A, Hopper, P, Jansen, P, Groeseneken, G

“…As a first step towards correlation of system level ESD robustness based on component level ESD results, on-wafer Human Metal Model (HMM) measurements are…”
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Total ionizing dose effects on ultra thin buried oxide floating body memories by Mahatme, N. N., Schrimpf, R. D., Reed, R. A., Bhuva, B. L., Griffoni, A., Simoen, E., Aoulaiche, M., Linten, D., Jurczak, M., Groeseneken, G.

“…The total-ionizing-dose response of 1-transistor floating body memory cells is investigated. Factors affecting the robustness of these novel devices for high…”
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