Search Results - "Gribelyuk, M. A."

High-resolution depth profiling in ultrathin Al2O3 films on Si by Gusev, E. P., Copel, M., Cartier, E., Baumvol, I. J. R., Krug, C., Gribelyuk, M. A.

“…A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and…”
Get full text

Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics by Guha, S., Cartier, E., Gribelyuk, M. A., Bojarczuk, N. A., Copel, M. C.

“…We report on the electrical and microstructural characteristics of La- and Y-based oxides grown on silicon substrates by ultrahigh vacuum atomic beam…”
Get full text

Mapping of electrostatic potential in deep submicron CMOS devices by electron holography by Gribelyuk, M A, McCartney, M R, Li, Jing, Murthy, C S, Ronsheim, P, Doris, B, McMurray, J S, Hegde, S, Smith, David J

“…Quantitative two-dimensional maps of electrostatic potential in device structures are obtained using off-axis electron holography with a spatial resolution of…”
Get full text

Quantitative analysis of one-dimensional dopant profile by electron holography by McCartney, M. R., Gribelyuk, M. A., Li, Jing, Ronsheim, P., McMurray, J. S., Smith, David J.

“…The one-dimensional dopant profile of a silicon p–n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM)…”
Get full text

Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching by Filippi, R.G, Gribelyuk, M.A, Joseph, T, Kane, T, Sullivan, T.D, Clevenger, L.A, Costrini, G, Gambino, J, Iggulden, R.C, Kiewra, E.W, Ning, X.J, Ravikumar, R, Schnabel, R.F, Stojakovic, G, Weber, S.J, Gignac, L.M, Hu, C.-K, Rath, D.L, Rodbell, K.P

“…The electromigration behavior and microstructural features of AlCu Dual Damascene lines are compared to those of AlCu metal reactively ion etched (RIE) lines…”
Get full text

Growth and microstructure of Si/CaF2/Si(111) heterostructures by GRIBELYUK, M. A, WILK, G. D

Get full text

Advanced salicides for 0.10 μm CMOS : Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi2 by KITTL, J. A, HONG, Q. Z, YANG, H, YU, N, SAMAVEDAM, S. B, GRIBELYUK, M. A

Get full text

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks by GRIBELYUK, M. A, CABRAL, C, GUSEV, E. P, NARAYANAN, V

Get full text

Mechanism of low temperature C54 TiSi2 formation bypassing C49 TiSi2: Effect of Si microstructure and Mo impurities on the Ti–Si reaction path by Kittl, J. A., Gribelyuk, M. A., Samavedam, S. B.

“…X-ray diffraction, high resolution transmission electron microscopy, and resistivity measurements were used to demonstrate a modification of the Ti/Si reaction…”
Get full text

Strong effect of dopant concentration gradient on etching rate by Ukraintsev, V. A., McGlothlin, R., Gribelyuk, M. A., Edwards, Hal

“…Dopant concentration sensitive etching of silicon in HF:HNO 3 :CH 3 COOH solution was studied using epitaxially grown silicon samples. The study has shown the…”
Get full text

A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology by Kwon, U., Wong, K., Krishnan, S. A., Econimikos, L., Zhang, X., Ortolland, C., Thanh, L. D., Laloe, J., Huang, J. Y., Edge, L. F., Wang, H. M., Gribelyuk, M. A., Rath, D. L., Bingert, R., Liu, Y., Bao, R., Kim, I., Ramachandran, R., Lai, W. L., Cutler, J., Salvador, D. S., Zhang, Y., Muncy, J., Paruchuri, V., Krishnan, M., Narayanan, V., Divakaruni, R., Chen, X., Chudzik, M. P.

“…Replacement metal gate (RMG) process requires gate fill with low resistance materials on top of work function tuning metals. Conventional titanium…”
Get full text

Growth and microstructure of Si/CaF sub(2)/Si(111) heterostructures by Gribelyuk, M A, Wilk, G D

“…The microstructure of the MBE-grown Si/CaF sub(2)/Si (111) heterostructures is studied by high resolution transmission electron microscopy (HRTEM). Two…”
Get full text

Microstructure evolution of electroplated Cu during room temperature transient by Gribelyuk, M.A., Malhotra, S.G., Locke, P.S., DeHaven, P., Fluegel, J., Parks, C., Simon, A.H., Murphy, R.

“…Previously the Cu resistance transient time was found to be dependent on the electroplating current. It was shown that longer transient times were correlated…”
Get full text

Ultrathin high-K gate stacks for advanced CMOS devices by Gusev, E.P., Buchanan, D.A., Cartier, E., Kumar, A., DiMaria, D., Guha, S., Callegari, A., Zafar, S., Jamison, P.C., Neumayer, D.A., Copel, M., Gribelyuk, M.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., Chan, K., Bojarczuk, N., Ragnarsson, L.-A., Ronsheim, P., Rim, K., Fleming, R.J., Mocuta, A., Ajmera, A.

“…Reviews recent progress in and outlines the issues for high-K high-temperature (/spl sim/1000/spl deg/C) poly-Si CMOS processes and devices and also…”
Get full text

Advanced salicides for 0.10 mu m CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi sub(2) by Kittl, J A, Hong, Q Z, Yang, H, Yu, N, Samavedam, S B, Gribelyuk, M A

“…Advanced Ti and Co salicide processes with implementations to a high performance 0.10 mu m complementary metal-oxide semiconductor (CMOS) technology are…”
Get full text

Al deposition temperature process window for 0.20 μm Al RIE interconnections by CLEVENGER, L. A, HONDA, M, RAVIKUMAR, R, STOJAKOVIC, G, DEHAVEN, P, DZIOBKOWSKI, C, GRIBELYUK, M. A, MURPHY, R, WONG, K

Get full text