Search Results - "Grezes, Cecile"
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1
Quantum memory for microwave photons in an inhomogeneously broadened spin ensemble
Published in Physical review letters (18-06-2013)“…We propose a multimode quantum memory protocol able to store the quantum state of the field in a microwave resonator into an ensemble of electronic spins. The…”
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2
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface
Published in Applied physics letters (30-01-2017)“…We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB|MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and…”
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3
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Published in Applied physics letters (13-02-2017)“…Magnetic tunnel junction based on the CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access…”
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4
Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution
Published in Nano letters (11-12-2019)“…Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for nonvolatile memory and logic…”
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5
Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory
Published in IEEE magnetics letters (2017)“…We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled…”
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6
Double-waveguide quantum cascade laser
Published in Applied physics letters (16-01-2012)“…We demonstrate 1.1W peak power at room-temperature from a double-waveguide quantum cascade laser (QCL) grown by metal-organic chemical vapor deposition. Two…”
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7
MTJ variation monitor-assisted adaptive MRAM write
Published in 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC) (05-06-2016)“…Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But…”
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Conference Proceeding -
8
Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control
Published in Nano letters (12-10-2022)“…Spin–orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to…”
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9
Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas
Published in Nature communications (05-05-2023)“…Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast…”
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10
Vertical monolithic integration of quantum cascade lasers for high-power broadband applications
Published in 2012 Conference on Lasers and Electro-Optics (CLEO) (01-05-2012)“…We demonstrate 1.1W peak power from a monolithic broadband laser composed of four quantum cascade laser active regions distributed over two uncoupled optical…”
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Conference Proceeding -
11
Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic Memory
Published in IEEE transactions on electron devices (01-10-2017)“…We propose, demonstrate, and assess a nontunneling-based nMOS voltage-controlled negative differential resistance (V-NDR) concept for overcoming the intrinsic…”
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12
Adaptive MRAM Write and Read with MTJ Variation Monitor
Published in IEEE transactions on emerging topics in computing (01-01-2021)“…Temperature and wafer-level process variations significantly degrade operation efficiency of Spin-transfer torque random access memory (STT-MRAM) and…”
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13
Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films
Published in Physical review letters (31-12-2020)“…Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here,…”
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14
Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling
Published in IEEE transactions on magnetics (01-11-2015)“…We review the recent progress in the development of magnetoelectric RAM (MeRAM) based on electric-field-controlled writing in magnetic tunnel junctions (MTJs)…”
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15
Source Line Sensing in Magneto-Electric Random-Access Memory to Reduce Read Disturbance and Improve Sensing Margin
Published in IEEE magnetics letters (2016)“…A source line sensing (SLS) scheme is presented, along with a corresponding memory core circuit architecture, for the sensing operation of magneto-electric…”
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16
Hybrid VC-MTJ/CMOS non-volatile stochastic logic for efficient computing
Published in Design, Automation & Test in Europe Conference & Exhibition (DATE), 2017 (01-03-2017)“…In this paper, we propose a non-volatile stochastic computing (SC) scheme using voltage-controlled magnetic tunnel junction (VC-MTJ) and negative differential…”
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Conference Proceeding -
17
Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control
Published 14-02-2023“…Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to…”
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Journal Article -
18
Ferroelectric spin orbit devices for ultralow power computing
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03-03-2024)“…We report a new approach to generate and detect spin currents by exploiting the interplay between spin-orbit effects and ferroelectricity, in two classes of…”
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Conference Proceeding -
19
Flux Qubits with Long Coherence Times for Hybrid Quantum Circuits
Published 04-07-2014“…Phys. Rev. Lett. 113, 123601 (2014) We present measurements of superconducting flux qubits embedded in a three dimensional copper cavity. The qubits are…”
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20
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Published 20-12-2016“…Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random…”
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Journal Article