Search Results - "Greve, D.W."

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  1. 1

    Simulation of microelectrode impedance changes due to cell growth by Xiaoqiu Huang, Duc Nguyen, Greve, D.W., Domach, M.M.

    Published in IEEE sensors journal (01-10-2004)
    “…Observation of impedance changes caused by cell growth on microelectrodes provides information about cell coverage and other important quantities, such as the…”
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    Journal Article
  2. 2

    Generation and detection of guided waves using PZT wafer transducers by Nienwenhui, J.H., Neumann, J.J., Greve, D.W., Oppenheim, I.J.

    “…We report here the use of finite element simulation and experiments to further explore the operation of the wafer transducer. We have separately modeled the…”
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    Journal Article
  3. 3

    Electrical characterization of coupled and uncoupled MEMS ultrasonic transducers by Oppenheim, I.J., Jain, A., Greve, D.W.

    “…We report electrical characterization of micromachined polysilicon capacitive diaphragms for use as ultrasonic transducers. Admittance measurements yield…”
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    Journal Article
  4. 4

    Optimization of wireless coupling to SAW sensors by Greve, D.W., Devkota, Jagannath, Ohodnicki, Paul

    “…Wireless interrogation of surface acoustic wave sensors can be accomplished either by inductive or electromagnetic (antenna) coupling. In order to optimize the…”
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    Conference Proceeding
  5. 5

    Properties of Si donors and persistent photoconductivity in AlGaN by Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Mil'vidskii, M.G., Redwing, J.M., Shin, M., Skowronski, M., Greve, D.W., Wilson, R.G.

    Published in Solid-state electronics (01-04-1998)
    “…The behavior of Si donors was studied in Al x Ga 1− x N films with composition 0< x<0.6. It is shown that the Si donors ionization energy increases from 18 meV…”
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    Journal Article
  6. 6

    MEMS ultrasonic transducers for the testing of solids by Oppenheim, I.J., Jain, A., Greve, D.W.

    “…Arrays of capacitive diaphragm ultrasonic transducers could potentially be used for non-destructive ultrasonic testing and structural monitoring. In this…”
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    Journal Article
  7. 7

    Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces by Ramachandran, V, Lee, C.D, Feenstra, R.M, Smith, A.R, Northrup, J.E, Greve, D.W

    Published in Journal of crystal growth (01-02-2000)
    “…The effect of trace arsenic on the growth and surface structure of GaN(0 0 0 1) has been studied. We find that a partial pressure of only 10 −9 Torr of arsenic…”
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    Journal Article Conference Proceeding
  8. 8

    High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films by Hatalis, M.K., Greve, D.W.

    Published in IEEE electron device letters (01-08-1987)
    “…Thin-film transistors (TFT's) were fabricated in low-temperature (550°C) crystallized amorphous LPCVD silicon films. The performance of these devices was found…”
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    Journal Article
  9. 9

    An Inductively Coupled Lamb Wave Transducer by Greve, D.W., Sohn, H., Yue, C.P., Oppenheim, I.J.

    Published in IEEE sensors journal (01-02-2007)
    “…Wafer-type piezoelectric transducers are effective transducers for the excitation and detection of ultrasonic Lamb waves in plate-like structures. Such…”
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    Journal Article
  10. 10

    Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors by Potyraj, P.A., Chen, D.-L., Hatalis, M.K., Greve, D.W.

    Published in IEEE transactions on electron devices (01-08-1988)
    “…The influence of several process variables on the characteristics of polysilicon emitter transistors is studied. The diffusion length of the polysilicon layer…”
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    Journal Article
  11. 11

    Low-temperature polycrystalline silicon thin-film transistors for displays by Biay-Cheng-Hseih, Hatalis, M.K., Greve, D.W.

    Published in IEEE transactions on electron devices (01-11-1988)
    “…Polycrystalline silicon thin-film transistors (TFTs) have been fabricated with low-temperature (600 degrees C) oxidized semi-insulating polysilicon (SIPOS) as…”
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    Journal Article
  12. 12
  13. 13

    Si/sub 1-x-y/GexCy-channel p-MOSFET's with improved thermal stability by Mocuta, A.C., Greve, D.W.

    Published in IEEE electron device letters (01-06-2000)
    “…We report the fabrication of heterostructure Si/sub 1-x-y/Ge/sub x/C/sub y/ channel p-MOSFETs with low-carbon Si/sub 1-x-y/Ge/sub x/C/sub y/ channels. The use…”
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    Journal Article
  14. 14
  15. 15

    Wireless CO2 SAW Sensors with a Nanoporous ZIF-8 Sensing Layer by Greve, D.W., Devkota, Jagannath, Ohodnicki, Paul

    “…Wireless surface acoustic wave gas sensors are potentially valuable for detecting leakage from pipelines or carbon sequestration wells. Metal organic framework…”
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    Conference Proceeding
  16. 16

    Characterization and Noise Analysis of Capacitive MEMS Acoustic Emission Transducers by Wei Wu, Greve, D.W., Oppenheim, I.J.

    Published in 2007 IEEE Sensors (01-10-2007)
    “…Resonant type capacitive MEMS transducers were fabricated using a multi-user MEMS process (MUMPs) for the detection of acoustic emission (AE). Electrical and…”
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    Conference Proceeding
  17. 17

    UHV/CVD growth of Co on Si(0 0 1) using cobalt carbonyl by Zhao, Q., Greve, D.W., Barmak, K.

    Published in Applied surface science (15-10-2003)
    “…We report studies of the growth of cobalt from cobalt carbonyl (Co 2(CO) 8) under ultrahigh vacuum conditions on Si(1 0 0) wafers. Thermal desorption mass…”
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    Journal Article Conference Proceeding
  18. 18

    Fibroblast growth and H-7 protein kinase inhibitor response monitored in microimpedance sensor arrays by Nguyen, Duc D., Huang, Xiaoqiu, Greve, David W., Domach, Michael M.

    Published in Biotechnology and bioengineering (20-07-2004)
    “…Functional genomic studies and drug candidate testing both require high throughput, parallel experimentation strategies to screen for variable cellular…”
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    Journal Article
  19. 19

    Forces and Torques on Rods in an Ultrasonic Standing Wave by Greve, D.W., Dauson, E.R., Oppenheim, I.J.

    “…In this paper we observe and simulate the effect of ultrasonic standing waves on elongated obj ects, including interactions between multiple objects. Alignment…”
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    Conference Proceeding
  20. 20

    Si–Ge–C growth and devices by Greve, D.W.

    “…Silicon–germanium can now be regarded as a relatively well-established technology, and consequently much recent work has addressed the additional possibilities…”
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    Journal Article Conference Proceeding