Search Results - "Gremion, E."

A Time Domain Multiplexer for Large Arrays of High Impedance Low Temperature Bolometers by Benoit, A., Yates, S. J. C., Grémion, E., Camus, P., Durand, T., Hoffmann, C., Leclercq, S., Monfardini, A., Cavanna, A., Etienne, B., Gennser, U., Jin, Y.

“…We present a time domain multiplexer for high impedance bolometer arrays. It is based on the use of quantum-point-contact high-electron-mobility-transistors…”
Get full text

Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation by Grémion, E., Niepce, D., Cavanna, A., Gennser, U., Jin, Y.

“…We report the experimental demonstration of quantum point contact (QPC) field-effect transistor (FET) with a voltage gain greater than 1 at 4.2 K. Using…”
Get full text

Development of Ultra-Low Noise HEMTs for Cryoelectronics at ≤4.2 K by Grémion, E., Cavanna, A., Liang, Y.-X., Gennser, U., Cheng, M.-C., Fesquet, M., Chardin, G., Benoît, A., Jin, Y.

“…We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to…”
Get full text

The use of HEMTs in multiplexing large arrays of high impedance LTDs by Yates, S.J.C., Benoit, A., Jin, Y., Camus, Ph, Cavanna, A., Durand, T., Etienne, B., Gennser, U., Grémion, E., Hoffmann, C., Leclercq, S., Ulysse, Ch

“…The use of a multiplexing system in close proximity to the detectors simplifies the electronics associated with large arrays of Low Temperature Detectors…”
Get full text

Development of X-ray microcalorimeters based on SOI technology and experimental results by Szeflinski, V., Aliane, A., De Moro, F., Pigot, C., Sauvageot, J-L., Agnèse, P., Gasse, A., Ribot, H., Gremion, E., De La Broise, X., Navick, X.F.

“…We are developing an X-ray spectro-imaging detector at cryogenic temperature (<100 mK) for next space generation missions, using silicon technology. Each pixel…”
Get full text

Theoretical and experimental results of a fully ballistic nano-FET with high gain by Gremion, E., Niepce, D., Gennser, U., Cavanna, A., Jin, Y.

“…We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In…”
Get full text

Towards Quantum Ballistic Field-Effect Transistors: Design and Experimental Results by Jin, Y., Gremion, E., Cavanna, A., Gennser, U., Etienne, B., Ulysse, C.

“…Summary form only given. In this talk, we show that properly designed 1D-QB conductor can actually lead to voltage-gain. Conceptually, the electric conduction…”
Get full text