Search Results - "Grein, C.H."

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  1. 1

    MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry by Aqariden, F., Elsworth, J., Zhao, J., Grein, C.H., Sivananthan, S.

    Published in Journal of electronic materials (01-10-2012)
    “…Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared…”
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    Journal Article Conference Proceeding
  2. 2

    MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements by Velicu, S., Grein, C.H., Emelie, P.Y., Itsuno, A., Philips, J.D., Wijewarnasuriya, P.

    Published in Journal of electronic materials (01-07-2010)
    “…In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger…”
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    Journal Article Conference Proceeding
  3. 3

    Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation by Emelie, P.Y., Velicu, S., Grein, C.H., Phillips, J.D., Wijewarnasuriya, P.S., Dhar, N.K.

    Published in Journal of electronic materials (01-09-2008)
    “…The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex…”
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    Journal Article Conference Proceeding
  4. 4

    Modeling of Recombination in HgCdTe by Grein, C.H., Flatté, M.E., Chang, Yong

    Published in Journal of electronic materials (01-09-2008)
    “…Minority carrier recombination lifetime calculations for narrow-gap semiconductors are of direct practical interest in establishing whether a material’s…”
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    Journal Article Conference Proceeding
  5. 5

    Modeling and design considerations of HgCdTe infrared photodiodes under nonequilibrium operation by EMELIE, P. Y, PHILLIPS, J. D, VELICU, S, GREIN, C. H

    Published in Journal of electronic materials (01-08-2007)
    “…The general approach and effects of nonequilibrium operation of Auger suppressed HgCdTe infrared detectors are well understood. However, the complex…”
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    Conference Proceeding Journal Article
  6. 6

    Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211) by Boieriu, P., Grein, C. H., Jung, H. S., Garland, J., Nathan, V.

    Published in Applied physics letters (23-05-2005)
    “…Photovoltaic p - n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the…”
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    Journal Article
  7. 7

    Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy by Chang, Yong, Becker, C.R., Grein, C.H., Zhao, J., Fulk, C., Casselman, T., Kiran, R., Wang, X.J., Robinson, E., An, S.Y., Mallick, S., Sivananthan, S., Aoki, T., Wang, C.Z., Smith, D.J., Velicu, S., Zhao, J., Crocco, J., Chen, Y., Brill, G., Wijewarnasuriya, P.S., Dhar, N., Sporken, R., Nathan, V.

    Published in Journal of electronic materials (01-09-2008)
    “…The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized…”
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    Journal Article Conference Proceeding
  8. 8
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    Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si by Boieriu, P., Grein, C. H., Velicu, S., Garland, J., Fulk, C., Sivananthan, S., Stoltz, A., Bubulac, L., Dinan, J. H.

    Published in Applied physics letters (06-02-2006)
    “…We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by…”
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    Journal Article
  10. 10

    Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors by Chang, Yong, Fulk, C., Zhao, J., Grein, C.H., Sivananthan, S.

    Published in Infrared physics & technology (01-04-2007)
    “…Significant progresses have been made in the molecular beam epitaxy (MBE) growth of HgCdTe for high performance infrared photon detectors with the aid of in…”
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    Journal Article Conference Proceeding
  11. 11

    Absorption of narrow-gap HgCdTe near the band edge including nonparabolicity and the urbach tail by YONG CHANG, GUHA, S, GREIN, C. H, VELICU, S, FLATTE, M. E, NATHAN, V, SIVANANTHAN, S

    Published in Journal of electronic materials (01-08-2007)
    “…An analytical model describing the absorption behavior of Hg^sub 1-x^Cd^sub x^Te is developed. It simultaneously considers the contributions from non-parabolic…”
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    Conference Proceeding Journal Article
  12. 12

    Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices by Velicu, S., Grein, C.H., Zhao, J., Chang, Y., An, S.-Y., Yadav, A., Pipe, K., Clark, W.

    Published in Journal of electronic materials (01-09-2008)
    “…We present a study on the thermoelectric properties of n -type Hg 0.75 Cd 0.25 Te/Hg 0.7 Cd 0.3 Te superlattices (SLs). This material system was chosen because…”
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    Journal Article Conference Proceeding
  13. 13

    Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy by Wang, X.J., Fulk, C., Zhao, F.H., Li, D.H., Mukherjee, S., Chang, Y., Sporken, R., Klie, R., Shi, Z., Grein, C.H., Sivananthan, S.

    Published in Journal of electronic materials (01-09-2008)
    “…Narrow-bandgap PbSnSe has received much attention as a promising alternative material for mid- and long-wavelength high performance of infrared detection at…”
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    Journal Article Conference Proceeding
  14. 14

    Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping by Chang, Yong, Badano, G., Jiang, E., Garland, J.W., Zhao, J., Grein, C.H., Sivananthan, S.

    Published in Journal of crystal growth (15-04-2005)
    “…A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness…”
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    Journal Article
  15. 15

    Finite temperature studies of Te adsorption on [formula omitted] by Sen, Prasenjit, Ciraci, S, Batra, Inder P, Grein, C.H, Sivananthan, S

    Published in Surface science (01-11-2002)
    “…We perform first principles density functional calculations to investigate the adsorption of Te on the Si(0 0 1) surface from low coverage up to a monolayer…”
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    Journal Article
  16. 16

    Epitaxial growth simulations of CdTe(1 1 1)B on Si(0 0 1) by Oh, J., Grein, C.H.

    Published in Journal of crystal growth (01-09-1998)
    “…The epitaxial growth of CdTe on Si(0 0 1) substrates is simulated employing molecular dynamics and a hybrid approach combining molecular dynamics and Molte…”
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    Journal Article
  17. 17

    Electronic structure and radiative lifetimes of ideal Zn 1− xBe xSe alloys by Grein, C.H, Radtke, R.J, Ehrenreich, H, Chauvet, C, Tournié, E, Faurie, J.P

    Published in Solid state communications (2002)
    “…The electronic band structures of Zn 1− x Be x Se alloys are computed employing the virtual crystal approximation and empirical pseudopotentials…”
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    Journal Article
  18. 18

    First principles calculations of Si(2 1 1) surface reconstructions by Grein, C.H.

    Published in Journal of crystal growth (01-09-1997)
    “…Total energy calculations are performed on ideal and reconstructed surfaces of silicon (2 1 1). Specifically, the surface energies of 2 × 1 and rebonded 1 × 1…”
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    Journal Article
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    Modeling of CdTe(1 1 1)B/Si(0 0 1) interfaces by Oh, J., Grein, C.H.

    Published in Journal of crystal growth (01-08-1997)
    “…A detailed numerical examination is performed of a model of the CdTe(1 1 1)B/Si(0 0 1) interface previously proposed by Sporken et al. Total energies of…”
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    Journal Article