Search Results - "Grein, C.H."
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1
MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry
Published in Journal of electronic materials (01-10-2012)“…Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared…”
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Journal Article Conference Proceeding -
2
MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements
Published in Journal of electronic materials (01-07-2010)“…In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger…”
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Journal Article Conference Proceeding -
3
Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation
Published in Journal of electronic materials (01-09-2008)“…The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex…”
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Journal Article Conference Proceeding -
4
Modeling of Recombination in HgCdTe
Published in Journal of electronic materials (01-09-2008)“…Minority carrier recombination lifetime calculations for narrow-gap semiconductors are of direct practical interest in establishing whether a material’s…”
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Journal Article Conference Proceeding -
5
Modeling and design considerations of HgCdTe infrared photodiodes under nonequilibrium operation
Published in Journal of electronic materials (01-08-2007)“…The general approach and effects of nonequilibrium operation of Auger suppressed HgCdTe infrared detectors are well understood. However, the complex…”
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Conference Proceeding Journal Article -
6
Arsenic activation in molecular beam epitaxy grown, in situ doped HgCdTe(211)
Published in Applied physics letters (23-05-2005)“…Photovoltaic p - n junctions are the most significant active components of both current infrared photodetectors and advanced ones being developed. It is of the…”
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7
Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy
Published in Journal of electronic materials (01-09-2008)“…The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized…”
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Journal Article Conference Proceeding -
8
Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
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9
Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si
Published in Applied physics letters (06-02-2006)“…We present the results of using an electron cyclotron resonance (ECR) plasma to incorporate hydrogen into long wavelength infrared HgCdTe layers grown by…”
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10
Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors
Published in Infrared physics & technology (01-04-2007)“…Significant progresses have been made in the molecular beam epitaxy (MBE) growth of HgCdTe for high performance infrared photon detectors with the aid of in…”
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Journal Article Conference Proceeding -
11
Absorption of narrow-gap HgCdTe near the band edge including nonparabolicity and the urbach tail
Published in Journal of electronic materials (01-08-2007)“…An analytical model describing the absorption behavior of Hg^sub 1-x^Cd^sub x^Te is developed. It simultaneously considers the contributions from non-parabolic…”
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Conference Proceeding Journal Article -
12
Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
Published in Journal of electronic materials (01-09-2008)“…We present a study on the thermoelectric properties of n -type Hg 0.75 Cd 0.25 Te/Hg 0.7 Cd 0.3 Te superlattices (SLs). This material system was chosen because…”
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Journal Article Conference Proceeding -
13
Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy
Published in Journal of electronic materials (01-09-2008)“…Narrow-bandgap PbSnSe has received much attention as a promising alternative material for mid- and long-wavelength high performance of infrared detection at…”
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Journal Article Conference Proceeding -
14
Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping
Published in Journal of crystal growth (15-04-2005)“…A technique based on infrared microscopy and the automatic fitting of the transmissivity curves has been developed to measure the composition and thickness…”
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15
Finite temperature studies of Te adsorption on [formula omitted]
Published in Surface science (01-11-2002)“…We perform first principles density functional calculations to investigate the adsorption of Te on the Si(0 0 1) surface from low coverage up to a monolayer…”
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16
Epitaxial growth simulations of CdTe(1 1 1)B on Si(0 0 1)
Published in Journal of crystal growth (01-09-1998)“…The epitaxial growth of CdTe on Si(0 0 1) substrates is simulated employing molecular dynamics and a hybrid approach combining molecular dynamics and Molte…”
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17
Electronic structure and radiative lifetimes of ideal Zn 1− xBe xSe alloys
Published in Solid state communications (2002)“…The electronic band structures of Zn 1− x Be x Se alloys are computed employing the virtual crystal approximation and empirical pseudopotentials…”
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18
First principles calculations of Si(2 1 1) surface reconstructions
Published in Journal of crystal growth (01-09-1997)“…Total energy calculations are performed on ideal and reconstructed surfaces of silicon (2 1 1). Specifically, the surface energies of 2 × 1 and rebonded 1 × 1…”
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19
Electronic structure and radiative lifetimes of ideal Zn1-xBexSe alloys
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20
Modeling of CdTe(1 1 1)B/Si(0 0 1) interfaces
Published in Journal of crystal growth (01-08-1997)“…A detailed numerical examination is performed of a model of the CdTe(1 1 1)B/Si(0 0 1) interface previously proposed by Sporken et al. Total energies of…”
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