Search Results - "Grechnyi, S."

Formation of InAs nanocrystals in Si by high-fluence ion implantation by Komarov, F., Vlasukova, L., Wesch, W., Kamarou, A., Milchanin, O., Grechnyi, S., Mudryi, A., Ivaniukovich, A.

“…We have studied the formation of InAs precipitates with dimensions of several nanometers in silicon by means of As (245 keV, 5 × 10 16 cm −2) and In (350 keV,…”
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Ion-beam formation of nanopores and nanoclusters in SiO2 by Komarov, F.F., Vlasukova, L.A., Milchanin, O.M., Gaiduk, P.I., Yuvchenko, V.N., Grechnyi, S.S.

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