Search Results - "Gravesteijn, D. J."

Microscale elastic-strain determination by backscatter Kikuchi diffraction in the scanning electron microscope by TROOST, K. Z, VAN DER SLUIS, P, GRAVESTEIJN, D. J

“…It is shown that backscatter Kikuchi diffraction in the scanning electron microscope can be used for the determination of elastic strain with μm resolution…”
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Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers by Elibol, K., Nguyen, M.D., Hueting, R.J.E., Gravesteijn, D.J., Koster, G., Rijnders, G.

“…The integration of ferroelectric layers on gallium nitride (GaN) offers a great potential for various applications. Lead zirconate titanate (PZT), in…”
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Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures by Hajłasz, M., Donkers, J. J. T. M., Sque, S. J., Heil, S. B. S., Gravesteijn, D. J., Rietveld, F. J. R., Schmitz, J.

“…For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical…”
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Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors by Zhou, R., Li, L., Zhao, W., Liao, Z., Nguyen, M. D., Nunnenkamp, M., Houwman, E. P., Koster, G., Rijnders, A. J. H. M., Gravesteijn, D. J., Hueting, R. J. E.

“…The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using…”
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Ge segregation at Si/Si1-xGex interfaces grown by molecular beam epitaxy by ZALM, P. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

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Parasitic energy barriers in SiGe HBTs by Slotboom, J.W., Streutker, G., Pruijmboom, A., Gravesteijn, D.J.

“…Parasitic energy barriers can easily be introduced during processing. Measurements and calculations of experimental n-p-n HBTs (heterojunction bipolar…”
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Experiments on atomic-scale mechanisms of diffusion by COWERN, N. E. B, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VRIEZEMA, C. J

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Impurity diffusion via an intermediate species : the B-Si system by COWERN, N. E. B, JANSSEN, K. T. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J

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Characterization of recessed Ohmic contacts to AlGaN/GaN by Hajlasz, M., Donkers, J. J. T. M., Sque, S. J., Heil, S. B. S., Gravesteijn, D. J., Rietveld, F. J. R., Schmitz, J.

“…In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in…”
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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy by Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

“…High-quality SiGe heterojunction bipolar transistors (HBTs) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic…”
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Strain relaxation and self-organizing MBE-growth of local SiGe-structures by Rupp, T., Eisele, I., Gravesteijn, D.J.

“…SiGe wires and dots of μm size were fabricated by a self-organizing MBE growth mode. Layer thickness and Ge content on top of a Si mesa buffer are varied. It…”
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Photoluminescence from Si/Ge superlattices by MONTIE, E. A, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A, BULLE-LIEUWMA, C. W. T

“…We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1−xGex alloy buffer layer. X-ray diffraction and…”
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Diffusion in strained Si(Ge) by Cowern, NE, Zalm, PC, van der Sluis P, Gravesteijn, DJ, de Boer WB

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Characterization of epitaxial layers by the depth dependence of boron diffusivity by VAN OOSTRUM, K. J, ZALM, P. C, DE BOER, W. B, GRAVESTEIJN, D. J, MAES, J. W. F

“…Differences in boron diffusivity have been used to characterize epitaxially grown silicon layers. After oxidation-enhanced diffusion of boron spikes, a…”
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New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures by HIGGS, V, LIGHTOWLERS, E. C, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, MONTIE, E. A

“…Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy…”
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Arsenic doping in Si-MBE using low energy ion implantation (LEII) by Collart, E.J.H., Gravesteijn, D.J., Lathouwers, E.G.C., Kersten, W.J.

“…Arsenic doping using a new, high current (> 100 μA), low energy (down to 250 eV) implanter is presented. Using this set-up it is possible to homogeneously dope…”
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Ga delta-doping layers in silicon by ZAGWIJN, P. M, EROKHIN, Y. N, SLIJKERMAN, W. F. J, VAN DER VEEN, J. F, VAN DE WALLE, G. F. A, GRAVESTEIJN, D. J, VAN GORKUM, A. A

“…Delta-doping layers in silicon have been made by deposition of 0.39 monolayer Ga on Si(001). The dopant atoms have been buried in the host crystal using a…”
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Characterization of low-energy (100 eV–10 keV) boron ion implantation by Collart, E. J. H., Weemers, K., Gravesteijn, D. J., van Berkum, J. G. M.

“…Low-energy boron implantations between 100 eV and 10 keV are characterized using secondary ion mass spectrometry and electrical measurements of sheet carrier…”
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Low energy boron implantation in silicon and room temperature diffusion by Collart, E.J.H, Weemers, K, Cowern, N.E.B, Politiek, J, Bancken, P.H.L, van Berkum, J.G.M, Gravesteijn, D.J

“…In the semiconductor industry Complementary Metal Oxide Semiconductor Technology is the main stream. The continuing trend towards reduction of the transistor…”
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Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions by van Berkum, J. G. M., Collart, E. J. H., Weemers, K., Gravesteijn, D. J., Iltgen, K., Benninghoven, A., Niehuis, E.

“…The use of oxygen flooding and an amorphous Si capping for secondary ion mass spectrometry (SIMS) depth profiling of ultralow-energy implants is discussed in…”
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