Search Results - "Grasse, Christian"

Terahertz sources based on Čerenkov difference-frequency generation in quantum cascade lasers by Vijayraghavan, Karun, Adams, Robert W., Vizbaras, Augustinas, Jang, Min, Grasse, Christian, Boehm, Gerhard, Amann, Markus C., Belkin, Mikhail A.

“…We report room-temperature terahertz sources based on Čerenkov difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers with…”
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Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser by Hofmann, Werner, Chase, Chris, Müller, Michael, Yi Rao, Grasse, Christian, Böhm, Gerhard, Amann, Markus-Christian, Chang-Hasnain, Connie J

“…A novel long-wavelength vertical-cavity surface-emitting laser (VCSEL) structure based on a subwavelength high-contrast grating (HCG) as the output mirror has…”
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Type-II InP-based lasers emitting at 2.55 μ m by Sprengel, Stephan, Andrejew, Alexander, Vizbaras, Kristijonas, Gruendl, Tobias, Geiger, Kathrin, Boehm, Gerhard, Grasse, Christian, Amann, Markus-Christian

“…Room-temperature lasing at 2.55 μ m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42°C. This record long-wavelength…”
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Up to 3 μ m light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells by Sprengel, Stephan, Grasse, Christian, Vizbaras, Kristijonas, Gruendl, Tobias, Amann, Markus-Christian

“…We present 3 μ m photoluminescence at room temperature, which is achieved with GaInAs/GaAsSb type-II quantum wells on InP substrate. This long-wavelength…”
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InP-based 2.8–3.5  μ m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures by Grasse, Christian, Wiecha, Peter, Gruendl, Tobias, Sprengel, Stephan, Meyer, Ralf, Amann, Markus-Christian

“…We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 μm, 3.3 μm, and 3.5 μm and were grown by metalorganic vapor phase…”
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InP-Based Type-II Quantum-Well Lasers and LEDs by Sprengel, S., Grasse, C., Wiecha, P., Andrejew, A., Gruendl, T., Boehm, G., Meyer, R., Amann, M.

“…Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and…”
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Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning by Grundl, T., Debernardi, P., Muller, M., Grasse, C., Ebert, P., Geiger, K., Ortsiefer, M., Bohm, G., Meyer, R., Amann, M.-C

“…In this paper, we present fixed-wavelength, vertical-cavity-surface-emitting lasers (VCSELs) based on InP with remarkable single-mode (SM) output powers. It is…”
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Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections by Adams, Robert W., Vizbaras, Augustinas, Jang, Min, Grasse, Christian, Katz, Simeon, Boehm, Gerhard, Amann, Markus C., Belkin, Mikhail A.

“…We report the design and performance of terahertz quantum cascade laser sources based on intracavity difference frequency generation in dual-wavelength…”
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InP-based 2.8--3.5??m resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures by Grasse, Christian, Wiecha, Peter, Gruendl, Tobias, Sprengel, Stephan, Meyer, Ralf, Amann, Markus-Christian

“…We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 mu m, 3.3 mu m, and 3.5 mu m and were grown by metalorganic vapor…”
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GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3μm light emission grown on InP substrate by Grasse, Christian, Gruendl, Tobias, Sprengel, Stephan, Wiecha, Peter, Vizbaras, Kristijonas, Meyer, Ralf, Amann, Markus-Christian

“…In this paper we present the epitaxial growth and characterization of an InP-based micro-cavity light emitting diode (LED) with up to 3μm light emission by…”
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Tweaking the Modal Properties of 1.3- \mu Short-Cavity VCSEL-Simulation and Experiment by Muller, M., Debernardi, P., Grasse, C., Grundl, T., Amann, M.

“…A modal analysis of both molecular beam epitaxy (MBE)- and metal-organic vapor phase epitaxy (MOVPE)-planarized short-cavity (SC) vertical-cavity…”
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Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation by Grasse, Christian, Katz, Simeon, Böhm, Gerhard, Vizbaras, Augustinas, Meyer, Ralf, Amann, Markus-Christian

“…We present a wavelength prediction procedure on the basis of X-ray measurements and simulations for InP-based injectorless quantum cascade laser (QCL) devices…”
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AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate by Grasse, Christian, Mueller, Michael, Gruendl, Tobias, Boehm, Gerhard, Roenneberg, Enno, Wiecha, Peter, Rosskopf, Juergen, Ortsiefer, Markus, Meyer, Ralf, Amann, Markus-Christian

“…In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGaInAsP/GaInAsP active region and a re-grown and…”
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Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 \mu by Grundl, Tobias, Zogal, K., Debernardi, P., Muller, M., Grasse, C., Geiger, K., Meyer, R., Bohm, G., Amann, M-C, Kuppers, F., Meissner, P.

“…We present polarization stable, tunable long-wavelength vertical-cavity-surface-emitting lasers (VCSELs) at 1.55 μm based on InP. The tuning is accomplished by…”
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Growth of various antimony-containing alloys by MOVPE by Grasse, Christian, Meyer, Ralf, Breuer, Uwe, Böhm, Gerhard, Amann, Markus-Christian

“…GaInPSb bulk and superlattice layers have been grown by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures on exact and misorientated InP…”
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InP-Based Type-II Heterostructure Lasers for Wavelength above 2 µm by Sprengel, Stephan, Andrejew, Alexander, Veerabathran, Ganpath Kumar, Federer, Florian, Boehm, Gerhard, Grasse, Christian, Amann, Markus-Christian

“…We present an innovative concept for InP-based lasers utilizing the type-II band alignment between GaAsSb and GaInAs. With W-shaped QWs spontaneous room…”
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Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices by Boehm, Gerhard, Sprengel, Stephan, Vizbaras, Kristijonas, Grasse, Christian, Gruendl, Tobias, Meyer, Ralf, Amann, Markus-Christian

“…This work shows different approaches to cover the spectral range from 2 to 4 μm with active regions based on InP and GaSb for devices suitable as light sources…”
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Energy-efficient 1.3 μm short-cavity VCSELs for 30 Gb/s error-free optical links by Muller, M., Wolf, P., Grundl, T., Grasse, C., Rosskopf, J., Hofmann, W., Bimberg, D., Amann, Markus-Christian

“…We present the first error-free data-transmission at 30 Gb/s over up to 10 km of fiber using energy-efficient 1.3 μm short-cavity VCSELs with low threshold…”
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In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures by Grasse, Christian, Tomita, Yuto, Wiecha, Peter, Meyer, Ralf, Grundl, Tobias

“…In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the…”
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Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions by Sprengel, S., Vizbaras, K., Andrejew, A., Gruendl, T., Geiger, K., Boehm, G., Grasse, C., Amann, M.

“…We present a new concept for type-II lasers on InP, utilizing W-shaped GaAsSb/GaInAs active regions. First lasers demonstrate emission at 2.55μm up to 42°C in…”
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