Search Results - "Graham, A.P."

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  1. 1

    Towards the integration of carbon nanotubes in microelectronics by Graham, A.P., Duesberg, G.S., Seidel, R., Liebau, M., Unger, E., Kreupl, F., Hönlein, W.

    Published in Diamond and related materials (01-04-2004)
    “…The remarkable properties of carbon nanotubes (CNTs) make them especially interesting for microelectronic applications including interconnects and devices. The…”
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  2. 2

    Carbon nanotube applications in microelectronics by Hoenlein, W., Kreupl, F., Duesberg, G.S., Graham, A.P., Liebau, M., Seidel, R.V., Unger, E.

    “…The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated chemical vapor…”
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  3. 3

    Vibrational spectroscopy of water molecules on Pt(111) at submonolayer coverages by Glebov, A.L., Graham, A.P., Menzel, A.

    Published in Surface science (01-06-1999)
    “…The adsorption behavior and vibrational dynamics of H 2O (D 2O) molecules on the Pt(111) surface at surface temperatures, T s, between 20 and 140 K have been…”
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  4. 4

    Carbon nanotubes in interconnect applications by Kreupl, F, Graham, A.P, Duesberg, G.S, Steinhögl, W, Liebau, M, Unger, E, Hönlein, W

    Published in Microelectronic engineering (01-10-2002)
    “…Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as an interconnect material of the future. In this paper we will…”
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    High-Current Nanotube Transistors by Seidel, Robert, Graham, Andrew P, Unger, Eugen, Duesberg, Georg S, Liebau, Maik, Steinhoegl, Werner, Kreupl, Franz, Hoenlein, Wolfgang, Pompe, Wolfgang

    Published in Nano letters (01-05-2004)
    “…Planar field effect transistors (FET) consisting of a large number of parallel single-walled carbon nanotubes (SWCNT) have been fabricated that allow very high…”
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  7. 7

    Carbon Nanotubes for Microelectronics? by Graham, Andrew P., Duesberg, Georg S., Seidel, Robert V., Liebau, Maik, Unger, Eugen, Pamler, Werner, Kreupl, Franz, Hoenlein, Wolfgang

    “…Despite all prophecies of its end, silicon‐based microelectronics still follows Moore's Law and continues to develop rapidly. However, the inherent physical…”
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  8. 8

    Characterisation of CTX-M and AmpC genes in human isolates of Escherichia coli identified between 1995 and 2003 in England and Wales by Hopkins, K.L., Batchelor, M.J., Liebana, E., Deheer-Graham, A.P., Threlfall, E.J.

    “…CTX-M and AmpC genes in human isolates of Escherichia coli, their genetic environment and their host plasmids were examined. Isolates ( n = 103) were selected…”
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  9. 9

    Fluorination of carbon nanotubes with xenon difluoride by Unger, E., Liebau, M., Duesberg, G.S., Graham, A.P., Kreupl, F., Seidel, R., Hoenlein, W.

    Published in Chemical physics letters (21-11-2004)
    “…The reaction of multi-walled carbon nanotubes (MWCNT) with xenon difluoride has been studied and compared with the results from experiments with elemental…”
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  10. 10

    Ways towards the scaleable integration of carbon nanotubes into silicon based technology by Duesberg, G.S., Graham, A.P., Kreupl, F., Liebau, M., Seidel, R., Unger, E., Hoenlein, W.

    Published in Diamond and related materials (01-02-2004)
    “…The outstanding performance of carbon nanotubes (CNTs) as interconnects and microelectronic devices has been shown in a number of experiments on hand-picked…”
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    Contact improvement of carbon nanotubes via electroless nickel deposition by LIEBAU, M, UNGER, E, DUESBERG, G. S, GRAHAM, A. P, SEIDEL, R, KREUPL, F, HOENLEIN, W

    “…Individual multi-walled carbon nanotubes (CNTs) were deposited onto microelectrodes and embedded in nickel to achieve low-ohmic contact resistances…”
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  13. 13

    Decoration of multi-walled carbon nanotubes with noble- and transition-metal clusters and formation of CNT-CNT networks by UNGER, E, DUESBERG, G. S, LIEBAU, M, GRAHAM, A. P, SEIDEL, R, KREUPL, F, HOENLEIN, W

    “…Carbon nanotubes are of great interest because of their outstanding mechanical, chemical and electric properties. The decoration of multi-walled carbon…”
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  14. 14

    Effects of chain branching on the monolayer structure of alkanes at interfaces: a neutron and helium atom scattering study by Fuhrmann, D, Graham, A.P, Criswell, L, Mo, H, Matthies, B, Herwig, K.W, Taub, H

    Published in Surface science (20-06-2001)
    “…A study comparing the monolayer structures of intermediate-length alkanes adsorbed on various substrates using He-atom scattering (HAS) and neutron scattering…”
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  15. 15

    The use of quasielastic helium atom scattering to study correlated motion in adsorbate overlayers by Ellis, J., Graham, A.P.

    Published in Surface science (20-04-1997)
    “…Quasielastic helium atom scattering (QHAS) has been shown to be a powerful probe of surface diffusion on atomic length- and time-scales. So far, however, its…”
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  16. 16

    Non-Linear Gate Length Dependence of On-Current in Si-Nanowire FETs by Weber, W.M., Graham, A.P., Duesberg, G.S., Liebau, M., Cheze, C., Geelhaar, L., Unger, E., Pamler, W., Hoenlein, W., Riechert, H., Kreupl, F., Lugli, P.

    “…An extensive gate-length (L G ) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here…”
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  17. 17

    Self-Alignment Techniques to enable 40nm Trench Capacitor DRAM Technologies with 3-D Array Transistor and Single-Sided Strap by Moll, H.P., Hartwich, J., Scholz, A., Temmler, D., Graham, A.P., Slesazek, S., Wedler, G., Heineck, L., Mono, T., Zimmermann, U., Schupke, K., Ludwig, F., Park, I., Tran, T., Muller, W.

    Published in 2007 IEEE Symposium on VLSI Technology (01-06-2007)
    “…We report an enabling technology for 40 nm trench DRAM and beyond. The 3-dimensional array transistor is formed self-aligned (SA) to the deep trench (DT)…”
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  18. 18

    Carbon nanotubes for microelectronics: status and future prospects by Hoenlein, W., Kreupl, F., Duesberg, G.S., Graham, A.P., Liebau, M., Seidel, R., Unger, E.

    Published in Materials Science & Engineering C (15-12-2003)
    “…As the semiconductor industry faces increasing technological and financial challenges, new concepts have to be assessed. The extraordinary characteristics of…”
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  19. 19

    Carbon nanotubes for interconnect applications by Kreup, F., Graham, A.P., Liebau, M., Duesberg, G.S., Seidel, R., Unger, E.

    “…We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration…”
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  20. 20

    Carbon-based resistive memory by Kreupl, F., Bruchhaus, R., Majewski, P., Philipp, J.B., Symanczyk, R., Happ, T., Arndt, C., Vogt, M., Zimmermann, R., Buerke, A., Graham, A.P., Kund, M.

    “…We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like…”
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