Search Results - "Govorkov, O. I."

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  1. 1

    Liquid etching of metallization layers on GaAs/Al xGa1 − x as heterostructures with HNO3 + HCl + glycerol mixture by Arbenina, V. V., Marmalyuk, A. A., Arbenin, D. E., Budkin, I. V., Govorkov, O. I.

    Published in Inorganic materials (01-12-2008)
    “…A program package is developed for simplex-lattice-design processing of the data on etching of solid systems in multicomponent etchants. The procedure…”
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    Journal Article
  2. 2

    Liquid etching of metallization layers on GaAs/Al x Ga1 − x as heterostructures with HNO3 + HCl + glycerol mixture by Arbenina, V. V., Marmalyuk, A. A., Arbenin, D. E., Budkin, I. V., Govorkov, O. I.

    Published in Inorganic materials (01-12-2008)
    “…A program package is developed for simplex-lattice-design processing of the data on etching of solid systems in multicomponent etchants. The procedure…”
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    Journal Article
  3. 3

    Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD by Marmalyuk, A.A., Govorkov, O.I., Petrovsky, A.V., Nikitin, D.B., Padalitsa, A.A., Bulaev, P.V., Budkin, I.V., Zalevsky, I.D.

    Published in Journal of crystal growth (01-04-2002)
    “…Indium segregation in InGaAs/(Al)GaAs quantum wells (QWs) grown by low-pressure metal organic chemical vapor deposition (MOCVD) was studied. The QW…”
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    Journal Article
  4. 4

    The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution by Akchurin, R.Kh, Andreev, A.Y, Govorkov, O.I, Marmalyuk, A.A, Petrovsky, A.V

    Published in Applied surface science (13-03-2002)
    “…The experimental and calculation data on indium distribution in (Al)GaAs/InGaAs/(Al)GaAs quantum well (QW) structures are presented. Experimental examination…”
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    Journal Article
  5. 5

    Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE by Akchurin, R. Kh, Andreev, A. Yu, Berliner, L. B., Govorkov, O. I., Duraev, V. P., Maldzhy, A. A., Marmalyuk, A. A., Padalitsa, A. A., Petrovsky, A. V., Sabitov, D. R., Sukharev, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-01-2009)
    “…Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of…”
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    Journal Article
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