Search Results - "Gouralnik, A. S."

Formation of iron and iron silicides on silicon and iron surfaces. Role of the deposition rate and volumetric effects by Gouralnik, A. S., Dotsenko, S. A., Galkin, N. G., Ivanov, V. A., Plotnikov, V. S., Pustovalov, E. V., Cherednichenko, A. I., Gutakovski, A. K., Neklyudova, M. A.

“…A thin iron film deposited at the rate of 10 3 nm/sec on the Si(001) surface and a sandwich structure silicon/iron/Si(111) are studied by Surface Magneto-Optic…”
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Effect of deposition rate and a-Si precursor or cap layer on structure and magnetic properties of iron films on silicon substrates by Gouralnik, A.S., Galkin, N.G., Ivanov, V.A., Cherednichenko, A.I., Plotnikov, V.S., Pustovalov, E.V.

“…Ultrafast-deposition and a-Si precursor or cap layer are analyzed as possible approaches to the control upon interface intermixing and film growth process. A…”
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FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si by Chernev, I. M., Gouralnik, A. S., Subbotin, E. Yu, Galkin, K. N., Kropachev, O. V., Goroshko, D. L., Goroshko, O. A., Gerasimenko, A. V., Lisenkov, O. E., Galkin, N. G.

“…Mg 2 Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi 2 were grown as…”
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Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors by Gouralnik, A.S., Ivanchenko, M.V.

“…Indium films of the same thickness were grown on the Si(111) surfaces at radically different deposition rates and studied by AES. The deposition rates ratio…”
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Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability by Dotsenko, S.A., Luniakov, Yu.V., Gouralnik, A.S., Gutakovskii, A.K., Galkin, N.G.

“…Formation of magnesium silicides on amorphous silicon by deposition of Mg at room temperature is studied by electron energy loss spectroscopy, differential…”
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Influence of Si(111)–Cr surface phases in the formation and conductivity of Fe and Yb monolayers at room temperature on Si(111) by Galkin, N.G., Goroshko, D.L., Dotsenko, S.A., Gouralnik, A.S., Louchaninov, I.V.

“…Conductivity through the disordered iron and ytterbium two-dimensional layers during their formation on Si(111)-7×7, Si(111)7×7-Cr and Si(111)-(√3×√3)/30°-Cr…”
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Growth and magnetic properties of the sandwich structure Fe/magnetic silicide/Si(100) obtained from in situ optic and magneto-optic data by Gouralnik, A.S., Galkin, N.G., Goroshko, D.L., Dotsenko, S.A., Alekseev, A.A., Ivanov, V.A.

“…It is demonstrated by the Surface Magneto-Optic Kerr Effect and Differential Reflectance Spectroscopy methods that structures free of magnetically dead layers…”
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Self-organization of beta-FeSi2 islands on Si(111)7x7 by Galkin, N G, Polyarnyi, V O, Gouralnik, A S

“…The self-organisation process of semiconductor iron disilicide (beta-FeSi2) nanosize island formation during iron deposition at 475 C on silicon (111)…”
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A promising experimental paradigm and mechanism of Mg2Si UHV growth on a non-uniformly heated Si(111) sample by Gouralnik, A.S., Chernev, I.M., Maslov, A.M., Dotsenko, S.A.

“…The processes involved in the Mg2Si film growth on the Si(111) surface at different temperatures in UHV were studied in a single experiment with a sample whose…”
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Formation and transport properties of Si(111)/β-FeSi2/Si nanocluster structures by Galkin, N. G., Goroshko, D. L., Gouralnik, A. S., Polyarnyi, V. O., Louchaninov, I. V., Vavanova, S. V.

“…Processes of β-FeSi2 nanosize islands growth on Si(111)7× 7 surface and Si(111)-Cr surface phases and silicon growth over β-FeSi2 nanosize islands have been…”
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Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution by Gouralnik, A.S., Maslov, A.M., Ustinov, A. Yu, Dotsenko, S.A., Shevlyagin, A.V., Chernev, I.M., Il'yashenko, V.M., Kitan, S.A., Koblova, E.A., Galkin, K.N., Galkin, N.G., Gerasimenko, A.V.

“…•Mg2Si can be grown by fast (100 nm/s) deposition of Mg on Si(111) at 365–609 °C.•A simple way to study temperature-dependent processes in one experiment is…”
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Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth by Dotsenko, S.A., Gouralnik, A.S., Galkin, N.G., Galkin, K.N., Gutakovski, A.K., Neklyudova, M.A.

“…Growth of Mg film on amorphous Si (a-Si) at room temperature in UHV conditions was studied in situ with optical differential reflection spectroscopy and…”
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Self-organization of β-FeSi2 islands on Si(111)7×7 by Galkin, N.G., Polyarnyi, V.O., Gouralnik, A.S.

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Self-organization of b-FeSi2 islands on Si(111)7x7 by Galkin, N G, Polyarnyi, V O, Gouralnik, A S

“…The self-organisation process of semiconductor iron disilicide (*b-FeSi2) nanosize island formation during iron deposition at 475 DGC on silicon (111)…”
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A pulse-type evaporator for ultrafast deposition of thin films in ultrahigh vacuum by Gouralnik, A. S., Galkin, N. G., Ivanov, V. A., Ivanchenko, M. V., Chusovitin, E. A.

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Growth and magnetic properties of the sandwich structure Fe/magnetic silicide/Si(100) obtained from in situ optic and magneto-optic data by GOURALNIK, A. S, GALKIN, N. G, GOROSHKO, D. L, DOTSENKO, S. A, ALEKSEEV, A. A, IVANOV, V. A

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Influence of Si(111)-Cr surface phases in the formation and conductivity of Fe and Yb monolayers at room temperature on Si(111) by GALKIN, N. G, GOROSHKO, D. L, DOTSENKO, S. A, GOURALNIK, A. S, LOUCHANINOV, I. V

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Formation and transport properties of Si(111)/[beta]-FeSi2/Si nanocluster structures by G. Galkin, N, L. Goroshko, D, S. Gouralnik, A, O. Polyarnyi, V, V. Louchaninov, I, V. Vavanova, S

“…Processes of β-FeSi2 nanosize islands growth on Si(111)7× 7 surface and Si(111)-Cr surface phases and silicon growth over β-FeSi2 nanosize islands have been…”
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Self-organization of β-FeSi2 islands on Si(111)7×7 by GALKIN, N. G, POLYARNYI, V. O, GOURALNIK, A. S

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