Search Results - "Gouider, F"

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  1. 1

    The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells by Vasilyev, Yu. B., Gouider, F., Nachtwei, G., Buckle, P. D.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2010)
    “…The absorption of two-dimensional electrons in InSb-based quantum wells in the quantized magnetic fields in the terahertz spectral region are studied. A p…”
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    Journal Article
  2. 2

    Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells by Vasilyev, Yu. B., Mikhailov, N. N., Gouider, F., Vasilyeva, G. Yu, Nachtwei, G.

    Published in Semiconductors (Woodbury, N.Y.) (01-05-2012)
    “…Terahertz photoconductivity in magnetic fields in semimetallic HgTe/CdHgTe quantum wells has been studied. The main contribution to photoconductivity comes…”
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    Journal Article
  3. 3

    Terahertz photoconductivity of a two-dimensional electron gas in HgCdTe/HgTe quantum wells by Vasilyev, Yu. B., Gouider, F., Bugár, M., Nachtwei, G., Könemann, J., Brüne, C., Buhmann, H.

    Published in physica status solidi (b) (01-06-2010)
    “…The terahertz (THz) photoconductivity is investigated in HgTe/HgCdTe‐quantum wells (QWs) in Corbino geometry at various wavelengths of excited radiation. The…”
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    Journal Article
  4. 4

    Magnetotransport and THz-Optical Investigations at Devices with HgTe Quantum Wells by Gouider, F., Vasilyev, Y. B., Bugár, M., Könemann, J., Brüne, C., Buhmann, H., Nachtwei, G.

    Published in Journal of low temperature physics (01-04-2010)
    “…We investigated the magnetoconductivity and the Terahertz (THz) photo-conductivity of devices with HgTe quantum wells embedded in barrier layers of HgCdTe. For…”
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    Journal Article
  5. 5

    THz detectors with HgTe and InSb quantum wells by Gouider, F, Vasilyev, Y B, Könemann, J, Brüne, C, Buhmann, H, Buckle, P D, Nachtwei, G

    “…Terahertz-frequencies in semiconductor quantum wells are of interest due to the opportunity for making devices that operate at THz frequencies. In this study…”
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    Conference Proceeding
  6. 6

    Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering by Vasil’eva, G. Yu, Alekseev, P. S., Ivanov, Yu. L., Vasil’ev, Yu. B., Smirnov, D., Schmidt, H., Haug, R. J., Gouider, F., Nachtwei, G.

    Published in JETP letters (01-12-2012)
    “…The magnetoresistance of single-layer graphene on a Si/SiO 2 substrate is measured in the temperature range of 2.5–150 K. It is found that, at high enough…”
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    Journal Article
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