Search Results - "Gougousi, T."

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces by Henegar, Dr. A.J., Gougousi, Prof. T.

“…The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors…”
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Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition by Park, K. J., Doub, J. M., Gougousi, T., Parsons, G. N.

“…Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on Si O 2…”
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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates by Storm, D.F., Deen, D.A., Katzer, D.S., Meyer, D.J., Binari, S.C., Gougousi, T., Paskova, T., Preble, E.A., Evans, K.R., Smith, David J.

“…We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted…”
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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors by Deen, D. A., Storm, D. F., Bass, R., Meyer, D. J., Katzer, D. S., Binari, S. C., Lacis, J. W., Gougousi, T.

“…AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film…”
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HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage by Meyer, D. J., Katzer, D. S., Deen, D. A., Storm, D. F., Binari, S. C., Gougousi, T.

“…In this paper, we present the first demonstration of a HfO2‐insulated gate N‐polar GaN inverted high‐electron‐mobility transistor (iHEMT). HfO2‐insulated gate…”
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Properties of atomic layer deposited HfO(2) thin films by Hackley, J C, Gougousi, T

“…The growth, composition and morphology of HfO(2) films that have been deposited by atomic layer deposition (ALD) are examined in this article. The films are…”
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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates by Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

“…AlN/GaN heterostructures with 1700-cm 2 /V·s Hall mobility have been grown by molecular beam epitaxy on freestanding GaN substrates. Submicrometer gate-length…”
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HfO 2 ‐insulated gate N‐polar GaN HEMTs with high breakdown voltage by Meyer, D. J., Katzer, D. S., Deen, D. A., Storm, D. F., Binari, S. C., Gougousi, T.

“…Abstract In this paper, we present the first demonstration of a HfO 2 ‐insulated gate N‐polar GaN inverted high‐electron‐mobility transistor (iHEMT). HfO 2…”
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Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions by Gougousi, Theodosia, Barua, Dipak, Young, Erin D, Parsons, Gregory N

“…This work demonstrates a novel method for deposition of metal oxide thin films, including Al2O3, ZrO2, MnO x , and RuO x where the metal−organic precursors and…”
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Atomic layer deposited Ta 2 O 5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors by Deen, D. A., Storm, D. F., Bass, R., Meyer, D. J., Katzer, D. S., Binari, S. C., Lacis, J. W., Gougousi, T.

“…AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta 2 O 5 film…”
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Carbonate formation during post-deposition ambient exposure of high-k dielectrics by Gougousi, Theodosia, Niu, Dong, Ashcraft, Robert W., Parsons, Gregory N.

“…When thick films of group-III (La, Y)- and group-IV (Hf, Zr)-based high-k dielectrics are exposed to ambient for several months, Fourier transform infrared…”
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Recombination of H 3+ and D 3+ ions in a flowing afterglow plasma by Gougousi, T., Johnsen, R., Golde, M.F.

“…The analysis of flowing afterglow plasmas containing H 3 + or D 3 + ions indicates that the de-ionization of such plasmas does not occur by simple dissociative…”
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Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films by Barua, Dipak, Gougousi, Theodosia, Young, Erin D., Parsons, Gregory N.

“…Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70–120°C) by a cyclic adsorption/reaction processes using…”
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The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions by Gougousi, Theodosia, Kelly, M. Jason, Parsons, Gregory N.

“…In this letter, reactions occurring at the interface between polycrystalline silicon (poly-Si) and LaSiOx high-dielectric-constant (high-k) insulating layers…”
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Charge generation during oxidation of thin Hf metal films on silicon by Gougousi, Theodosia, Terry, David B., Parsons, Gregory N.

“…Oxidation of Hf metal films on Si appears to follow different charge generation rules than the traditional oxidation of Si described in detail by Deal et al…”
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Langmuir-Probe Measurements in Flowing-Afterglow Plasmas by Johnsen, R., Shunko, E. V., Gougousi, T., Golde, M. F.

“…The validity of the orbital-motion theory for cylindrical Langmuir probes immersed in flowing- afterglow plasmas is investigated experimentally. It is found…”
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Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma by Gougousi, Theodosia, Golde, Michael F., Johnsen, Rainer

“…The flowing-afterglow technique in conjunction with computer modelling of the flowing plasma has been used to determine accurate dissociative-recombination…”
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Recombination of H3+ and D3+ ions in a flowing afterglow plasma by Gougousi, T., Johnsen, R., Golde, M.F.

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Thickness metrology and end point control in W chemical vapor deposition process from SiH 4 / WF 6 using in situ mass spectrometry by Xu, Y., Gougousi, T., Henn-Lecordier, L., Liu, Y., Cho, S., Rubloff, G. W.

“…Real-time, in situ chemical sensing has been applied to achieve reaction metrology and advanced process control in a low pressure tungsten chemical vapor…”
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Run to run control in tungsten chemical vapor deposition using H sub(2)/WF sub(6) at low pressures by Sreenivasan, R, Gougousi, T, Xu, Y, Kidder J, Jr, Zafiriou, E, Rubloff, G W

“…Wafer state (thickness) control in the tungsten chemical vapor deposition (CVD) process was achieved by run to run (RtR)control with an Intermediate Model…”
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